InGaN/AlGaInN quantum wells for low-threshold laser active region (Conference Presentation)

2020 ◽  
Author(s):  
Hanlin Fu ◽  
Damir Borovac ◽  
Justin Goodrich ◽  
Onoriode Ogidi-Ekoko ◽  
Nelson Tansu
Keyword(s):  
Active Region ◽  
Quantum Wells ◽  
Low Threshold

Low threshold, room temperature pulsed and quasi-continuous lasing in optically pumped CdZnTe/ZnTe quantum wells

1993 ◽  
Vol 22 (5) ◽  
pp. 479-484 ◽  
Author(s):  
R. D. Feldman ◽  
T. D. Harris ◽  
J. E. Zucker ◽  
D. Lee ◽  
R. F. Austin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Optically Pumped ◽  
Low Threshold

scholarly journals Stacked Dual-Band Quantum Well Infrared Photodetector Based on Double-Layer Gold Disk Enhanced Local Light Field

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2695
Author(s):  
Chang Liu ◽  
Xuan Zuo ◽  
Shaohui Xu ◽  
Lianwei Wang ◽  
Dayuan Xiong
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Quantum Wells ◽  
Double Layer ◽  
Enhancement Factor ◽  
Coupling Efficiency ◽  
Dual Band ◽  
Enhancement Effect ◽  
Infrared Photodetector ◽  
Quantum Well Infrared Photodetector

We propose a stacked dual-band quantum well infrared photodetector (QWIP) integrated with a double-layer gold disk. Two 10-period quantum wells (QW) operating at different wavelengths are stacked together, and gold nano-disks are integrated on their respective surfaces. Numerical calculations by finite difference time domain (FDTD) showed that the best enhancement can be achieved at 13.2 and 11.0 µm. By integrating two metal disks, two plasmon microcavity structures can be formed with the substrate to excite localized surface plasmons (LSP) so that the vertically incident infrared light can be converted into electric field components perpendicular to the growth direction of the quantum well (EZ). The EZ electric field component can be enhanced up to 20 times compared to the incident light, and it is four times that of the traditional two-dimensional hole array (2DHA) grating. We calculated the enhancement factor and coupling efficiency of the device in the active region of the quantum well. The enhancement factor of the active region of the quantum well on the top layer remains above 25 at the wavelength of 13.2 μm, and the enhancement factor can reach a maximum of 45. Under this condition, the coupling efficiency of the device reaches 2800%. At the wavelength of 11.0 μm, the enhancement factor of the active region of the quantum well at the bottom is maintained above 6, and the maximum can reach about 16, and the coupling efficiency of the device reaches 800%. We also optimized the structural parameters and explored the influence of structural changes on the coupling efficiency. When the radius (r1, r2) of the two metal disks increases, the maximum coupling efficiency will be red-shifted as the wavelength increases. The double-layer gold disk structure we designed greatly enhances the infrared coupling of the two quantum well layers working at different wavelengths in the dual-band quantum well infrared photodetector. The structure we designed can be used in stacked dual-band quantum well infrared photodetectors, and the active regions of quantum wells working at two wavelengths can enhance the photoelectric coupling, and the enhancement effect is significant. Compared with the traditional optical coupling structure, the structure we proposed is simpler in process and has a more significant enhancement effect, which can meet the requirements of working in complex environments such as firefighting, night vision, and medical treatment.

Carrier loss mechanisms in type II quantum wells for the active region of GaSb-based mid-infrared interband cascade lasers

2011 ◽  
Vol 33 (11) ◽  
pp. 1817-1819 ◽  
Author(s):  
G. Sęk ◽  
F. Janiak ◽  
M. Motyka ◽  
K. Ryczko ◽  
J. Misiewicz ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Wells ◽  
Type Ii ◽  
Mid Infrared ◽  
Type Ii Quantum Wells ◽  
Interband Cascade Lasers ◽  
Cascade Lasers ◽  
Loss Mechanisms

1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAs heterostructures.

2003 ◽  
Vol 794 ◽  
Author(s):  
V.M. Ustinov ◽  
A.E. Zhukov ◽  
A.R. Kovsh ◽  
N.A. Maleev ◽  
S.S. Mikhrin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Active Region ◽  
Quantum Wells ◽  
Gaas Substrate ◽  
Room Temperature ◽  
Internal Quantum Efficiency ◽  
Characteristic Temperature ◽  
Optical Loss ◽  
Threshold Current ◽  
Temperature Threshold

ABSTRACT1.5 micron range emission has been realized using the InAs quantum dots embedded into the metamorphic InGaAs layer containing 20% of InAs grown by MBE on a GaAs substrate. Growth regimes were optimized to reduce significantly the density of dislocations propagating into the active layer from the lattice mismatched interface. 2 mm long InGaAs/InGaAlAs lasers with 10 planes of quantum dots in the active region showed threshold current density about 1.4 kA/cm2 with the external differential efficiency as high as 38%. Lasing wavelength depends on the optical loss being in the 1.44–1.49 micron range at room temperature. On increasing the temperature the wavelength reaches 1.515 micron at 85C while the threshold current characteristic temperature of 55–60K was estimated. High internal quantum efficiency (η>60%)and low internal losses (α=3–4 cm ) were realized. Maximum room temperature output power in pulsed regime as high as 5.5 W for 100 micron wide stripe was demonstrated. Using the same concept 1.3 micron InGaAs/InGaAlAs quantum well lasers were fabricated. The active region contained quantum wells with high (∼40%) indium content which was possible due to the intermediate InGaAs strain relaxation layer. 1 mm stripe lasers showed room temperature threshold current densities about 3.3 kA/cm (λ=1.29 micron) and 400 A/cm2 at 85K. Thus, the use of metamorphic InGaAs layers on GaAs substrate is a very promising approach for increasing the emission wavelength of GaAs based lasers.

GaxIn/sub 1-x/AsyP/sub 1-y/-InP tensile-strained quantum wells for 1.3-μm low-threshold lasers

1995 ◽  
Vol 7 (8) ◽  
pp. 842-844 ◽  
Author(s):  
N. Yokouchi ◽  
N. Yamanaka ◽  
N. Iwai ◽  
A. Kasukawa
Keyword(s):  
Quantum Wells ◽  
Strained Quantum Wells ◽  
Low Threshold

First Fabrication of Low-Threshold AlGaAs/GaAs Patterned Quantum Wells Laser Grown on Si Substrate

1993 ◽  
Vol 32 (S3) ◽  
pp. 509 ◽  
Author(s):  
Yoshiaki Hasegawa ◽  
Takashi Egawa ◽  
Takashi Jimbo ◽  
Masayoshi Umeno
Keyword(s):  
Quantum Wells ◽  
Si Substrate ◽  
Low Threshold
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