Semipolar group III-nitride distributed-feedback blue laser diode with Indium tin oxide surface grating

2020 ◽  
Author(s):  
Haojun Zhang ◽  
Daniel Cohen ◽  
Philip Chan ◽  
Matthew Wong ◽  
Shlomo Mehari ◽  
...  
Keyword(s):  
Laser Diode ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Distributed Feedback ◽  
Blue Laser ◽  
Oxide Surface ◽  
Group Iii ◽  
Surface Grating ◽  
Blue Laser Diode ◽  
Group Iii Nitride

scholarly journals Continuous-wave operation of a semipolar InGaN distributed-feedback blue laser diode with a first-order indium tin oxide surface grating

2019 ◽  
Vol 44 (12) ◽  
pp. 3106 ◽  
Author(s):  
Haojun Zhang ◽  
Daniel A. Cohen ◽  
Philip Chan ◽  
Matthew S. Wong ◽  
Shlomo Mehari ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Continuous Wave ◽  
Distributed Feedback ◽  
Blue Laser ◽  
Oxide Surface ◽  
First Order ◽  
Surface Grating ◽  
Blue Laser Diode ◽  
Continuous Wave Operation

scholarly journals Distributed-feedback blue laser diode utilizing a tunnel junction grown by plasma-assisted molecular beam epitaxy

2020 ◽  
Vol 28 (23) ◽  
pp. 35321
Author(s):  
G. Muziol ◽  
M. Hajdel ◽  
H. Turski ◽  
K. Nomoto ◽  
M. Siekacz ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Laser Diode ◽  
Tunnel Junction ◽  
Molecular Beam ◽  
Distributed Feedback ◽  
Blue Laser ◽  
Blue Laser Diode

Implantation and Dry Etching of Group-III-Nitride Semiconductors

MRS Bulletin ◽  
1997 ◽  
Vol 22 (2) ◽  
pp. 36-43 ◽  
Author(s):  
J.C. Zolper ◽  
R.J. Shul
Keyword(s):  
Ion Implantation ◽  
Laser Diode ◽  
Plasma Etching ◽  
Blue Laser ◽  
Lasing Threshold ◽  
Nitride Semiconductors ◽  
Processing Technologies ◽  
Material Quality ◽  
Group Iii ◽  
Group Iii Nitride

The recent advances in the material quality of the group-III-nitride semiconductors (GaN, A1N, and InN) have led to the demonstration of high-brightness light-emitting diodes, blue laser diodes, and high-frequency transistors, much of which is documented in this issue of MRS Bulletin. While further improvements in the material properties can be expected to enhance device operation, further device advances will also require improved processing technology. In this article, we review developments in two critical processing technologies for photonic and electronic devices: ion implantation and plasma etching. Ion implantation is a technology whereby impurity atoms are introduced into the semiconductor with precise control of concentration and profile. It is widely used in mature semiconductor materials systems such as silicon or gallium arsenide for selective area doping or isolation. Plasma etching is employed to define device features in the semiconductor material with controlled profiles and etch depths. Plasma etching is particularly necessary in the III-nitride materials systems due to the lack of suitable wet-etch chemistries, as will be discussed later.Figure 1 shows a laser-diode structure (after Nakamura) where plasma etching is required to form the laser facets that ideally should be vertical with smooth surfaces. The first III-nitride-based laser diode was fabricated using reactive ion etching (RIE) to form the laser facets but suffered from rough mirror facet surfaces that contributed to scattering loss and a high lasing threshold. This is a prime example of how improved material quality alone will not yield optimum device performance.

GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature

2021 ◽  
Vol 42 (11) ◽  
pp. 112801
Author(s):  
Feng Liang ◽  
Degang Zhao ◽  
Zongshun Liu ◽  
Ping Chen ◽  
Jing Yang ◽  
...  
Keyword(s):  
Laser Diode ◽  
Room Temperature ◽  
Continuous Wave ◽  
Chemical Vapor ◽  
Threshold Current ◽  
Stimulated Emission ◽  
Blue Laser ◽  
Organic Chemical ◽  
Blue Laser Diode ◽  
Continuous Wave Operation

Abstract In this work, we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode (LD), and its stimulated emission wavelength is around 442 nm. The GaN-based high power blue LD is grown on a c-plane GaN substrate by metal organic chemical vapor deposition (MOCVD), and the width and length of the ridge waveguide structure are 30 and 1200 μm, respectively. The threshold current is about 400 mA, and corresponding threshold current density is 1.1 kA/cm2.

Experimental Investigation on High-order Transverse-mode of the Pr：YLF Laser by a Blue Laser-diode Off-axis Pumping

2020 ◽  
Vol 49 (10) ◽  
pp. 1014001-1014001
Author(s):  
张锋宸 Feng-chen ZHANG ◽  
惠沉林 Chen-lin HUI ◽  
舒启鹤 Qi-he SHU ◽  
黄彩虹 Cai-hong HUANG ◽  
龚冬梅 Dong-mei GONG ◽  
...  
Keyword(s):  
Experimental Investigation ◽  
Laser Diode ◽  
Transverse Mode ◽  
High Order ◽  
Blue Laser ◽  
Blue Laser Diode

320 nm ultraviolet laser in blue laser diode double end pumped Pr:YLF crystal (Invited)

2020 ◽  
Vol 49 (12) ◽  
pp. 20201070-20201070
Author(s):  
李昕奇 Xinqi Li ◽  
曲大鹏 Dapeng Qu ◽  
陈晴 Qing Chen ◽  
刘天虹 Tianhong Liu ◽  
郑权 Quan Zheng
Keyword(s):  
Laser Diode ◽  
Blue Laser ◽  
Ultraviolet Laser ◽  
Blue Laser Diode

Quantum-Dot Surface Emitting Distributed Feedback Lasers Using Indium–Tin–Oxide as Top Claddings

2016 ◽  
Vol 28 (15) ◽  
pp. 1633-1636 ◽  
Author(s):  
Ting-Yuan Chang ◽  
Chien-Hung Pan ◽  
Kuo-Bin Hong ◽  
Chien-Hung Lin ◽  
Gray Lin ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Distributed Feedback ◽  
Distributed Feedback Lasers

scholarly journals 4-Gbit/s visible light communication link based on 16-QAM OFDM transmission over remote phosphor-film converted white light by using blue laser diode

2015 ◽  
Vol 23 (26) ◽  
pp. 33656 ◽  
Author(s):  
José Ramón Durán Retamal ◽  
Hassan Makine Oubei ◽  
Bilal Janjua ◽  
Yu-Chieh Chi ◽  
Huai-Yung Wang ◽  
...  
Keyword(s):  
Visible Light ◽  
Laser Diode ◽  
White Light ◽  
Visible Light Communication ◽  
Blue Laser ◽  
Communication Link ◽  
Blue Laser Diode ◽  
Remote Phosphor ◽  
Phosphor Film
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