Tunable room-temperature continuous-wave mid-infrared VCSELs

Author(s):  
Vijaysekhar Jayaraman ◽  
Borys Kolasa ◽  
Chad Lindblad ◽  
Anthony Cazabat ◽  
Christopher Burgner ◽  
...  
Author(s):  
Paula Heu ◽  
Christoph Deutsch ◽  
Vijaysekhar Jayaraman ◽  
Stephen Segal ◽  
Kevin Lascola ◽  
...  

2002 ◽  
Vol 12 (04) ◽  
pp. 1025-1038 ◽  
Author(s):  
D. V. DONETSKY ◽  
R. U. MARTINELLI ◽  
G. L. BELENKY

The design of room-temperature, InGaAsSb/AlGaAsSb diode lasers has evolved from the first double-heterojunction lasers described in 1980 that operated in the pulsed-current mode to present-day continuous–wave (CW), high-power, quantum–well diode lasers. We discuss in detail recent results from type-I-heterostructure, GaSb-based CW room-temperature diode lasers. The devices operate within the wavelength range of 1.8 to 2.7 μm, providing output powers up to several Watts. We analyze the factors limiting device performance.


2012 ◽  
Vol 1396 ◽  
Author(s):  
Binbin Weng ◽  
Lin Li ◽  
Jijun Qiu ◽  
Zhisheng Shi

ABSTRACTThe lead-salt epitaxial membrane embedded with two dimensional hexagonal air holes lattice array was used to develop the mid-infrared (mid-IR) photonic crystal surface emitting laser. For the initial proof-of-concept research work, we demonstrated intensive photonic crystal coupled mid-IR vertical light emissions from the designed structure under cryogenic temperature range. In order to realize room temperature operation, we modified the photonic bands structure, aligned the photonic crystal coupled mode with the gain spectrum of active material at 300 K. As a result, under pulsed mode optical excitation, multi-mode room temperature mid-IR photonic crystal lasing emissions were achieved at wavelength ∼3.5 μm recently. With further optimization, a practical lead-salt continuous-wave operating room temperature surface emitting photonic crystal laser is anticipated soon, and this will explore promising applications in a wide variety of fields.


2012 ◽  
Vol 20 (19) ◽  
pp. 20894 ◽  
Author(s):  
William W. Bewley ◽  
Chadwick L. Canedy ◽  
Chul Soo Kim ◽  
Mijin Kim ◽  
Charles D. Merritt ◽  
...  

1999 ◽  
Vol 75 (23) ◽  
pp. 3608-3610 ◽  
Author(s):  
P. J. McCann ◽  
K. Namjou ◽  
X. M. Fang

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Stefano Pirotta ◽  
Ngoc-Linh Tran ◽  
Arnaud Jollivet ◽  
Giorgio Biasiol ◽  
Paul Crozat ◽  
...  

AbstractApplications relying on mid-infrared radiation (λ ~ 3-30 μm) have progressed at a very rapid pace in recent years, stimulated by scientific and technological breakthroughs like mid-infrared cameras and quantum cascade lasers. On the other side, standalone and broadband devices allowing control of the beam amplitude and/or phase at ultra-fast rates (GHz or more) are still missing. Here we show a free-space amplitude modulator for mid-infrared radiation (λ ~ 10 μm) that can operate at room temperature up to at least 1.5 GHz (−3dB cutoff at ~750 MHz). The device relies on a semiconductor heterostructure enclosed in a judiciously designed metal–metal optical resonator. At zero bias, it operates in the strong light-matter coupling regime up to 300 K. By applying an appropriate bias, the device transitions towards the weak-coupling regime. The large change in reflectance is exploited to modulate the intensity of a mid-infrared continuous-wave laser up to 1.5 GHz.


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