Enhanced aluminum doping profile in 4H-SiC by wet-chemical laser doping

14th National Conference on Laser Technology and Optoelectronics (LTO 2019) ◽

10.1117/12.2537604 ◽

2019 ◽

Author(s):

Atif Mehmood Jadoon ◽

Lingfei Ji ◽

Zhenyuan Lin

Keyword(s):

Doping Profile ◽

Aluminum Doping ◽

Chemical Laser ◽

Laser Doping ◽

Wet Chemical

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Increased doping depth of Al in wet-chemical laser doping of 4H-SiC by expanding laser pulse

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2016.11.036 ◽

2017 ◽

Vol 70 ◽

pp. 193-196 ◽

Cited By ~ 5

Author(s):

Akihiro Ikeda ◽

Daichi Marui ◽

Rikuho Sumina ◽

Hiroshi Ikenoue ◽

Tanemasa Asano

Keyword(s):

Laser Pulse ◽

Chemical Laser ◽

Laser Doping ◽

Wet Chemical

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30-4: Characterization of Si Thin Films Doped by Wet-Chemical Laser Processing

SID Symposium Digest of Technical Papers ◽

10.1002/sdtp.11659 ◽

2017 ◽

Vol 48 (1) ◽

pp. 430-432 ◽

Cited By ~ 3

Author(s):

Akira Suwa ◽

Nozomu Tanaka ◽

Taizoh Sadoh ◽

Daisuke Nakamura ◽

Hiroshi Ikenoue

Keyword(s):

Thin Films ◽

Laser Processing ◽

Chemical Laser ◽

Wet Chemical

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Junction depth estimation using wet chemical etching for deep junction fabricated by laser doping

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) ◽

10.1109/pvsc.2013.6744415 ◽

2013 ◽

Author(s):

Som Mondal ◽

Vishnu Kant Bajpai ◽

Chetan Singh Solanki

Keyword(s):

Chemical Etching ◽

Depth Estimation ◽

Junction Depth ◽

Laser Doping ◽

Wet Chemical ◽

Wet Chemical Etching

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Effect of aluminum doping on the structural and luminescent properties of ZnO nanoparticles synthesized by wet chemical method

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2011.01.022 ◽

2011 ◽

Vol 43 (6) ◽

pp. 1166-1170 ◽

Cited By ~ 21

Author(s):

R. Saravana Kumar ◽

R. Sathyamoorthy ◽

P. Sudhagar ◽

P. Matheswaran ◽

C.P. Hrudhya ◽

...

Keyword(s):

Zno Nanoparticles ◽

Chemical Method ◽

Luminescent Properties ◽

Wet Chemical Method ◽

Aluminum Doping ◽

Wet Chemical

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Formation of a p‐n junction in silicon carbide by aluminum doping at room temperature using a pulsed laser doping method

Applied Physics Letters ◽

10.1063/1.115075 ◽

1995 ◽

Vol 67 (14) ◽

pp. 2052-2053 ◽

Cited By ~ 6

Author(s):

Osamu Eryu ◽

Yasuo Okuyama ◽

Kenshiro Nakashima ◽

Toshitake Nakata ◽

Masanori Watanabe

Keyword(s):

Silicon Carbide ◽

Room Temperature ◽

Pulsed Laser ◽

Aluminum Doping ◽

Laser Doping

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Structures of chemically stabilized ceramics

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100150459 ◽

1993 ◽

Vol 51 ◽

pp. 924-925

Author(s):

Pratibha L. Gai ◽

M. A. Saltzberg ◽

L.G. Hanna ◽

S.C. Winchester

Keyword(s):

High Temperature ◽

Calcium Nitrate ◽

Nitrate Hexahydrate ◽

Chemical Route ◽

Cubic Form ◽

Tetragonal Form ◽

Wet Chemical ◽

Wet Chemical Route ◽

Final Composition ◽

Aluminium Nitrate Nonahydrate

Silica based ceramics are some of the most fundamental in crystal chemistry. The cristobalite form of silica has two modifications, α (low temperature, tetragonal form) and β (high temperature, cubic form). This paper describes our structural studies of unusual chemically stabilized cristobalite (CSC) material, a room temperature silica-based ceramic containing small amounts of dopants, prepared by a wet chemical route. It displays many of the structural charatcteristics of the high temperature β-cristobalite (∼270°C), but does not undergo phase inversion to α-cristobalite upon cooling. The Structure of α-cristobalite is well established, but that of β is not yet fully understood.Compositions with varying Ca/Al ratio and substitutions in cristobalite were prepared in the series, CaO:Al2O3:SiO2 : 3-x: x : 40, with x= 0-3. For CSC, a clear sol was prepared from Du Pont colloidal silica, Ludox AS-40®, aluminium nitrate nonahydrate, and calcium nitrate hexahydrate in proportions to form a final composition 1:2:40 composition.

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