Si-Ge intermixing induced at mesa sidewalls of Si-capped Ge epitaxial layers on Si for operation wavelength tuning in Ge photonic devices

2019 ◽  
Author(s):  
Yasuhiko Ishikawa ◽  
Kazuki Kawashita ◽  
Riku Katamawari ◽  
Kazuki Ito ◽  
Moïse Sotto
Keyword(s):  
Photonic Devices ◽  
Wavelength Tuning ◽  
Epitaxial Layers

IMPROVEMENT OF GaAs EPITAXIAL LAYERS BY INDIUM INCORPORATION

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-693-C4-696 ◽  
Author(s):  
J. P. LAURENTI ◽  
P. ROENTGEN ◽  
K. WOLTER ◽  
K. SEIBERT ◽  
H. KURZ ◽  
...  
Keyword(s):  
Epitaxial Layers

Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

2002 ◽  
Vol 719 ◽  
Author(s):  
Masashi Kato ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Shigehiro Nishino
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Activation Energies ◽  
Thickness Dependence ◽  
Epitaxial Layers ◽  
Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

An homogeneous growth model of gallium arsenide epitaxial layers from the gas phase

1989 ◽  
Vol 54 (11) ◽  
pp. 2933-2950
Author(s):  
Emerich Erdös ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma
Keyword(s):  
Experimental Data ◽  
Gallium Arsenide ◽  
Kinetic Study ◽  
Gas Phase ◽  
Growth Model ◽  
Epitaxial Layers ◽  
Inhomogeneous Model ◽  
Homogeneous Models ◽  
Active Centres

This paper represents a continuation and ending of the kinetic study of the gallium arsenide formation, where a so-called inhomogeneous model is proposed and quantitatively formulated in five variants, in which two kinds of active centres appear. This model is compared both with the experimental data and with the previous sequence of homogeneous models.

Tunable stair-guide (TSG) DBR lasers for single current continuous wavelength tuning

1995 ◽  
Vol 31 (21) ◽  
pp. 1843-1845 ◽  
Author(s):  
K. Kudo ◽  
M. Kitamura ◽  
M. Yamaguchi ◽  
N. Kida ◽  
P. Delansay
Keyword(s):  
Wavelength Tuning ◽  
Dbr Lasers

Lifetime limiting defects in 4H-SiC epitaxial layers: The influence of substrate originated defects

2021 ◽  
Vol 560-561 ◽  
pp. 126033
Author(s):  
J. Erlekampf ◽  
M. Rommel ◽  
K. Rosshirt-Lilla ◽  
B. Kallinger ◽  
P. Berwian ◽  
...  
Keyword(s):  
Epitaxial Layers ◽  
Influence Of Substrate

scholarly journals Theoretical Analysis of Terahertz Dielectric–Loaded Graphene Waveguide

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 210
Author(s):  
Da Teng ◽  
Kai Wang
Keyword(s):  
Photonic Devices ◽  
Effective Index ◽  
The Finite Element Method ◽  
Index Method ◽  
Modal Properties ◽  
Terahertz Region ◽  
Effective Index Method ◽  
Integration Density ◽  
Device Integration ◽  
Potential Applications

The waveguiding of terahertz surface plasmons by a GaAs strip-loaded graphene waveguide is investigated based on the effective-index method and the finite element method. Modal properties of the effective mode index, modal loss, and cut-off characteristics of higher order modes are investigated. By modulating the Fermi level, the modal properties of the fundamental mode could be adjusted. The accuracy of the effective-index method is verified by a comparison between the analytical results and numerical simulations. Besides the modal properties, the crosstalk between the adjacent waveguides, which determines the device integration density, is studied. The findings show that the effective-index method is highly valid for analyzing dielectric-loaded graphene plasmon waveguides in the terahertz region and may have potential applications in subwavelength tunable integrated photonic devices.

scholarly journals Controlling wave fronts with tunable disordered non-Hermitian multilayers

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Denis V. Novitsky ◽  
Dmitry Lyakhov ◽  
Dominik Michels ◽  
Dmitrii Redka ◽  
Alexander A. Pavlov ◽  
...  
Keyword(s):  
Incident Light ◽  
Passage Time ◽  
Photonic Devices ◽  
Gain Saturation ◽  
Wave Fronts ◽  
Optical Effects ◽  
Front Shape ◽  
Optical Applications ◽  
Increasing Demand ◽  
First Time

AbstractUnique and flexible properties of non-Hermitian photonic systems attract ever-increasing attention via delivering a whole bunch of novel optical effects and allowing for efficient tuning light-matter interactions on nano- and microscales. Together with an increasing demand for the fast and spatially compact methods of light governing, this peculiar approach paves a broad avenue to novel optical applications. Here, unifying the approaches of disordered metamaterials and non-Hermitian photonics, we propose a conceptually new and simple architecture driven by disordered loss-gain multilayers and, therefore, providing a powerful tool to control both the passage time and the wave-front shape of incident light with different switching times. For the first time we show the possibility to switch on and off kink formation by changing the level of disorder in the case of adiabatically raising wave fronts. At the same time, we deliver flexible tuning of the output intensity by using the nonlinear effect of loss and gain saturation. Since the disorder strength in our system can be conveniently controlled with the power of the external pump, our approach can be considered as a basis for different active photonic devices.

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