scholarly journals Ga-free InAs/InAsSb type-II superlattice (T2SL) photodetector for high operating temperature in the midwave infrared spectral domain

2019 ◽  
Author(s):  
J. -P. Perez ◽  
Q. Durlin ◽  
P. Christol
Keyword(s):  
Operating Temperature ◽  
Spectral Domain ◽  
Type Ii ◽  
High Operating Temperature ◽  
Type Ii Superlattice ◽  
Infrared Spectral ◽  
Midwave Infrared

High Operating Temperature Type-II Superlattice Mid-Infrared Detectors

2020 ◽  
Author(s):  
Sarath Gunapala ◽  
David Ting ◽  
Alexander Soibel ◽  
Arezou Khoshakhlagh ◽  
Sir Rafol ◽  
...  
Keyword(s):  
Infrared Detectors ◽  
Operating Temperature ◽  
Type Ii ◽  
Mid Infrared ◽  
High Operating Temperature ◽  
Type Ii Superlattice

High operating temperature midwave infrared photodiodes and focal plane arrays based on type-II InAs/GaSb superlattices

2011 ◽  
Vol 98 (14) ◽  
pp. 143501 ◽  
Author(s):  
S. Abdollahi Pour ◽  
E. K. Huang ◽  
G. Chen ◽  
A. Haddadi ◽  
B.-M. Nguyen ◽  
...  
Keyword(s):  
Focal Plane ◽  
Operating Temperature ◽  
Focal Plane Arrays ◽  
Type Ii ◽  
High Operating Temperature ◽  
Midwave Infrared ◽  
Infrared Photodiodes

High Operating Temperature Midwave Infrared InAs/GaSb Superlattice Photodetectors on (111) GaSb Substrates

2013 ◽  
Vol 34 (3) ◽  
pp. 426-428 ◽  
Author(s):  
E. Plis ◽  
B. Klein ◽  
S. Myers ◽  
N. Gautam ◽  
E. P. Smith ◽  
...  
Keyword(s):  
Operating Temperature ◽  
High Operating Temperature ◽  
Midwave Infrared

Demonstration of Fabricated Midwave Infrared InAs/GaSb Type-II Superlattice-based Focal Plane Arrays

2017 ◽  
Vol 67 (2) ◽  
pp. 149 ◽  
Author(s):  
K.C. Goma Kumari ◽  
H.M. Rawool ◽  
S. Chakrabarti
Keyword(s):  
Low Temperature ◽  
Focal Plane ◽  
Spectral Response ◽  
Low Noise ◽  
Focal Plane Arrays ◽  
Type Ii ◽  
Type Ii Superlattice ◽  
Pixel Detectors ◽  
Midwave Infrared ◽  
Single Pixel

In this study, fabricated 320 × 256 infrared focal plane arrays (FPAs) were realised using a GaSb/InAs-based type-II superlattice heterostructure for midwave infrared (MWIR) imaging. We report here the optimized fabrication and characterization of single-pixel infrared detectors and FPAs. MWIR spectral response up to 5 μm of these single-pixel detectors was evident up to 250 K. Responsivity was measured to be 1.62 A/W at 0.8 V and 80 K. Current–voltage characteristics at room temperature (300 K) and at low temperature (18 K) revealed the resistance and dark current variation of the device in the operating bias region. Moreover, good thermal images were obtained at device temperatures up to 150 K for low-temperature targets. Low noise equivalent difference in temperature was measured to be 58 mK at 50 K and 117 mK at 120 K.

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