High-detection efficiency MCP-PMTs with single photon counting capability for LIDAR applications

A compact single-photon counting module that can accurately control the bias voltage and hold-off time is developed in this work. The module is a microcontroller-based system which mainly consists of a microcontroller, a programmable negative voltage generator, a silicon-based single-photon avalanche diode, and an integrated active quench and reset circuit. The module is 3.8 cm × 3.6 cm × 2 cm in size and can communicate with the end user and be powered through a USB cable (5 V). In this module, the bias voltage of the single-photon avalanche diode (SPAD) is precisely controllable from −14 V ~ −38 V and the hold-off time (consequently the dead time) of the SPAD can be adjusted from a few nanoseconds to around 1.6 μs with a setting resolution of ∼6.5 ns. Experimental results show that the module achieves a minimum dead time of around 28.5 ns, giving a saturation counting rate of around 35 Mcounts/s. Results also show that at a controlled reverse bias voltage of 26.8 V, the dark count rate measured is about 300 counts/s and the timing jitter measured is about 158 ps. Photodetection probability measurements show that the module is suited for detection of visible light from 450 nm to 800 nm with a 40% peak photon detection efficiency achieved at around 600 nm.

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Proton Irradiation of 4H-SiC Ultraviolet Single Photon Avalanche Diodes

Materials Science Forum ◽

10.4028/www.scientific.net/msf.679-680.551 ◽

2011 ◽

Vol 679-680 ◽

pp. 551-554

Author(s):

D. Kurt Gaskill ◽

Jun Hu ◽

X. Xin ◽

Jian Hui Zhao ◽

Brenda L. VanMil ◽

...

Keyword(s):

Proton Irradiation ◽

Detection Efficiency ◽

Single Photon ◽

Photon Counting ◽

Chemical Vapor ◽

Single Photon Detection ◽

Proton Radiation ◽

Space Applications ◽

Single Photon Counting ◽

Avalanche Diodes

The effects of proton irradiation on uv 4H-SiC single photon avalanche photodiodes (SPADs) are reported. The SPADs, grown by chemical vapor deposition, were designed for uv operation with dark count rates (DCR) of about 30 kHz and single photon detection efficiency (SPDE) of 4.89%. The SPADs were irradiated with 2 MeV protons to a fluence of 1012 cm-2. After irradiation, the I-V characteristics show forward voltage (<1.9 V) generation-recombination currents 2 to 3 times higher than before irradiation. Single photon counting measurements imply generation-recombination centers created in the band gap after irradiation. For threshold voltage ranging from 23 to 26 mV, the 4H-SiC SPAD showed low DCR (<54 kHz) and high SPDE (>1%) after irradiation. The SPADs demonstrated proton radiation tolerance for geosynchronous space applications.

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High Detection Efficiency and Time Resolution Integrated-Passive-Quenched Single-Photon Avalanche Diodes

IEEE Journal of Selected Topics in Quantum Electronics ◽

10.1109/jstqe.2014.2341580 ◽

2014 ◽

Vol 20 (6) ◽

pp. 268-275 ◽

Cited By ~ 10

Author(s):

Fabio Acerbi ◽

Massimo Cazzanelli ◽

Alessandro Ferri ◽

Alberto Gola ◽

Lorenzo Pavesi ◽

...

Keyword(s):

Time Resolution ◽

Detection Efficiency ◽

Single Photon ◽

Avalanche Diodes ◽

High Detection ◽

High Detection Efficiency ◽

Single Photon Avalanche Diodes

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High-detection probability broadband single-photon counting receivers

10.1117/12.818820 ◽

2009 ◽

Author(s):

Leye Aina ◽

Ayub Fathimulla ◽

Harry Hier ◽

Mark Lecates ◽

Sachi Babu ◽

...

Keyword(s):

Detection Probability ◽

Single Photon ◽

Photon Counting ◽

Single Photon Counting ◽

High Detection

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