Enhanced wafer overlay residuals control: deep sub-nanometer at sub-millimeter lateral resolution

2019 ◽  
Author(s):  
Yael Sufrin ◽  
Philippe Leray ◽  
Eren Canga ◽  
Avi Cohen ◽  
Vladimir Dmitriev ◽  
...  
Keyword(s):  
Lateral Resolution

Lateral resolution of the electron microbeam analysis

1978 ◽  
Vol 36 (1) ◽  
pp. 542-543
Author(s):  
H.J. Dudek
Keyword(s):  
Quantitative Analysis ◽  
Depth Resolution ◽  
Lateral Resolution ◽  
Cylindrical Particle ◽  
Correction Procedure ◽  
X Ray ◽  
Element Concentrations ◽  
Microbeam Analysis ◽  
The Matrix

The chemical inhomogenities in modern materials such as fibers, phases and inclusions, often have diameters in the region of one micrometer. Using electron microbeam analysis for the determination of the element concentrations one has to know the smallest possible diameter of such regions for a given accuracy of the quantitative analysis.In th is paper the correction procedure for the quantitative electron microbeam analysis is extended to a spacial problem to determine the smallest possible measurements of a cylindrical particle P of high D (depth resolution) and diameter L (lateral resolution) embeded in a matrix M and which has to be analysed quantitative with the accuracy q. The mathematical accounts lead to the following form of the characteristic x-ray intens ity of the element i of a particle P embeded in the matrix M in relation to the intensity of a standard S

Resolution in the scanning tunneling microscope

1991 ◽  
Vol 49 ◽  
pp. 488-489
Author(s):  
R. J. Wilson ◽  
D. D. Chambliss ◽  
S. Chiang ◽  
V. M. Hallmark
Keyword(s):  
Scanning Tunneling Microscope ◽  
Fundamental Principle ◽  
Atomic Scale ◽  
Lateral Resolution ◽  
Scanning Tunneling ◽  
Electronic Noise ◽  
Vertical Resolution ◽  
Tunneling Microscopy ◽  
Spatial Profile ◽  
Theoretical Analyses

Scanning tunneling microscopy (STM) has been used for many atomic scale observations of metal and semiconductor surfaces. The fundamental principle of the microscope involves the tunneling of evanescent electrons through a 10Å gap between a sharp tip and a reasonably conductive sample at energies in the eV range. Lateral and vertical resolution are used to define the minimum detectable width and height of observed features. Theoretical analyses first discussed lateral resolution in idealized cases, and recent work includes more general considerations. In all cases it is concluded that lateral resolution in STM depends upon the spatial profile of electronic states of both the sample and tip at energies near the Fermi level. Vertical resolution is typically limited by mechanical and electronic noise.

3-D Optical Interference Microscopy at the Lateral Resolution

2014 ◽  
Vol 8 (4) ◽  
pp. 231-241 ◽  
Author(s):  
Peter Lehmann ◽  
Jan Niehues ◽  
Stanislav Tereschenko
Keyword(s):  
Interference Microscopy ◽  
Lateral Resolution ◽  
Optical Interference

scholarly journals Reflection-mode in vivo photoacoustic microscopy with subwavelength lateral resolution

2014 ◽  
Vol 5 (12) ◽  
pp. 4235 ◽  
Author(s):  
Wei Song ◽  
Wei Zheng ◽  
Ruimin Liu ◽  
Riqiang Lin ◽  
Hongtao Huang ◽  
...  
Keyword(s):  
Lateral Resolution ◽  
Photoacoustic Microscopy ◽  
Reflection Mode
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