scholarly journals X-ray evaluation of the Marshall Grazing Incidence X-ray Spectrometer (MaGIXS) nickel-replicated mirrors

Author(s):  
Patrick R. Champey ◽  
Amy Winebarger ◽  
P.S. Athiray ◽  
Ken Kobayashi ◽  
Sabrina Savage ◽  
...  
Keyword(s):  
2000 ◽  
Vol 628 ◽  
Author(s):  
Sophie Besson ◽  
Catherine Jacquiod ◽  
Thierry Gacoin ◽  
André Naudon ◽  
Christian Ricolleau ◽  
...  

ABSTRACTA microstructural study on surfactant templated silica films is performed by coupling traditional X-Ray Diffraction (XRD) and Transmission Electronic Microscopy (TEM) to Grazing Incidence Small Angle X-Ray Scattering (GISAXS). By this method it is shown that spin-coating of silicate solutions with cationic surfactant cetyltrimethylammonium bromide (CTAB) as a templating agent provides 3D hexagonal structure (space group P63/mmc) that is no longer compatible with the often described hexagonal arrangement of tubular micelles but rather with an hexagonal arrangement of spherical micelles. The extent of the hexagonal ordering and the texture can be optimized in films by varying the composition of the solution.


Author(s):  
N.M. Novikovskii ◽  
◽  
V.M. Raznomazov ◽  
V.O. Ponomarenko ◽  
D.A. Sarychev ◽  
...  

Author(s):  
Jonathan Ogle ◽  
Daniel Powell ◽  
Eric Amerling ◽  
Detlef Matthias Smilgies ◽  
Luisa Whittaker-Brooks

<p>Thin film materials have become increasingly complex in morphological and structural design. When characterizing the structure of these films, a crucial field of study is the role that crystallite orientation plays in giving rise to unique electronic properties. It is therefore important to have a comparative tool for understanding differences in crystallite orientation within a thin film, and also the ability to compare the structural orientation between different thin films. Herein, we designed a new method dubbed the mosaicity factor (MF) to quantify crystallite orientation in thin films using grazing incidence wide-angle X-ray scattering (GIWAXS) patterns. This method for quantifying the orientation of thin films overcomes many limitations inherent in previous approaches such as noise sensitivity, the ability to compare orientation distributions along different axes, and the ability to quantify multiple crystallite orientations observed within the same Miller index. Following the presentation of MF, we proceed to discussing case studies to show the efficacy and range of application available for the use of MF. These studies show how using the MF approach yields quantitative orientation information for various materials assembled on a substrate.<b></b></p>


1993 ◽  
Vol 308 ◽  
Author(s):  
Paul R. Besser ◽  
Thomas N. Marieb ◽  
John C. Bravman

ABSTRACTStrain relaxation in passivated Al-0.5% Cu lines was measured using X-ray diffraction coupled with in-situ observation of the formation and growth of stress induced voids. Samples of 1 μm thick Al-0.5% Cu lines passivated with Si3N4 were heated to 380ºC, then cooled and held at 150ºC. During the test, principal strains along the length, width, and height of the line were determined using a grazing incidence x-ray geometry. From these measurements the hydrostatic strain in the metal was calculated and strain relaxation was observed. The thermal cycle was duplicated in a high voltage scanning transmission electron microscope equipped with a backscattered electron detector. The 1.25 μm wide lines were seen to have initial stress voids. Upon heating these voids reduced in size until no longer observable. Once the samples were cooled to 150ºC, voids reappeared and grew. The measured strain relaxation is discussed in terms of void and θ-phase (Al2Cu) formation.


2020 ◽  
Vol 1004 ◽  
pp. 393-400
Author(s):  
Tuerxun Ailihumaer ◽  
Hongyu Peng ◽  
Balaji Raghothamachar ◽  
Michael Dudley ◽  
Gilyong Chung ◽  
...  

Synchrotron monochromatic beam X-ray topography (SMBXT) in grazing incidence geometry shows black and white contrast for basal plane dislocations (BPDs) with Burgers vectors of opposite signs as demonstrated using ray tracing simulations. The inhomogeneous distribution of these dislocations is associated with the concave/convex shape of the basal plane. Therefore, the distribution of these two BPD types were examined for several 6-inch diameter 4H-SiC substrates and the net BPD density distribution was used for evaluating the nature and magnitude of basal plane bending in these wafers. Results show different bending behaviors along the two radial directions - [110] and [100] directions, indicating the existence of non-isotropic bending. Linear mapping of the peak shift of the 0008 reflection along the two directions was carried out using HRXRD to correlate with the results from the SMBXT measurements. Basal-plane-tilt angle calculated using the net BPD density derived from SMBXT shows a good correlation with those obtained from HRXRD measurements, which further confirmed that bending in basal plane is caused by the non-uniform distribution of BPDs. Regions of severe bending were found to be associated with both large tilt angles (95% black contrast BPDs to 5% white contrast BPDs) and abrupt changes in a and c lattice parameters i.e. local strain.


Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3191
Author(s):  
Arun Kumar Mukhopadhyay ◽  
Avishek Roy ◽  
Gourab Bhattacharjee ◽  
Sadhan Chandra Das ◽  
Abhijit Majumdar ◽  
...  

We report the surface stoichiometry of Tix-CuyNz thin film as a function of film depth. Films are deposited by high power impulse (HiPIMS) and DC magnetron sputtering (DCMS). The composition of Ti, Cu, and N in the deposited film is investigated by X-ray photoelectron spectroscopy (XPS). At a larger depth, the relative composition of Cu and Ti in the film is increased compared to the surface. The amount of adventitious carbon which is present on the film surface strongly decreases with film depth. Deposited films also contain a significant amount of oxygen whose origin is not fully clear. Grazing incidence X-ray diffraction (GIXD) shows a Cu3N phase on the surface, while transmission electron microscopy (TEM) indicates a polycrystalline structure and the presence of a Ti3CuN phase.


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