Development of a thermal-oxide patterning method for mitigating coating stress-induced distortion in silicon mirrors for the Lynx X-Ray Telescope mission concept (Conference Presentation)

2019 ◽  
Author(s):  
Youwei Yao ◽  
Brandon D. Chalifoux ◽  
Ralf K. Heilmann ◽  
Kai-Wing Chan ◽  
Hideyuki Mori ◽  
...  
Keyword(s):  
X Ray ◽  
Thermal Oxide ◽  
Coating Stress

Thermal oxide patterning method for compensating coating stress in silicon x-ray telescope mirrors

2018 ◽  
Author(s):  
Youwei Yao ◽  
Brandon D. Chalifoux ◽  
Ralf K. Heilmann ◽  
Mark L. Schattenburg ◽  
Hideyuki Mori ◽  
...  
Keyword(s):  
X Ray ◽  
Thermal Oxide ◽  
Telescope Mirrors ◽  
Coating Stress

scholarly journals Progress of coating stress compensation of silicon mirrors for Lynx x-ray telescope mission concept using thermal oxide patterning method

2019 ◽  
Vol 5 (02) ◽  
pp. 1 ◽  
Author(s):  
Youwei Yao ◽  
Brandon D. Chalifoux ◽  
Ralf K. Heilmann ◽  
Kai-Wing Chan ◽  
Hideyuki Mori ◽  
...  
Keyword(s):  
X Ray ◽  
Thermal Oxide ◽  
Stress Compensation ◽  
Coating Stress

Chemical Structure of Native Oxide Grown on Hydrogenterminated Silicon Surfaces

1992 ◽  
Vol 259 ◽  
Author(s):  
M. Takakura ◽  
T. Yasaka ◽  
S. Miyazaki ◽  
M. Hirose
Keyword(s):  
Photoelectron Spectroscopy ◽  
Chemical Structure ◽  
Pure Water ◽  
Silicon Surfaces ◽  
Native Oxide ◽  
Appreciable Amount ◽  
X Ray ◽  
Thermal Oxide ◽  
Phonon Peak ◽  
Strained Bonds

ABSTRACTChemical bonding features and suboxide compositions in native oxide grown on chemically-cleaned hydrogen-terminated Si(100) surfaces stored in pure water have been studied by using surface sensitive infrared spectroscopy and x-ray photoelectron spectroscopy. The LO phonon peak for the native oxide is located at 1210cm−1, which is shifted to a significantly lower wavenumber side than the ultrathin thermal oxide peak at 1250cm−1. This is because an appreciable amount of SiHx bonds are incorporated in the native oxide/Si interface and such hydrogen termination in the network dramatically reduces strained bonds in the interface. Very weak Si2+ suboxide signal from the oxide grown in pure water is also explained by the incorporated SiHx bonds which interrupt the Si2+ suboxide formation in the interface.

Structure of Thermally Grown SiO2 on Crystalline 6H‐SíC

1996 ◽  
Vol 446 ◽  
Author(s):  
H. Tsuchida ◽  
I. Kamata ◽  
K. Izumi
Keyword(s):  
Local Structure ◽  
Structural Transition ◽  
Total Reflection ◽  
Attenuated Total Reflection ◽  
Interface Roughness ◽  
X Ray ◽  
Thermal Oxide ◽  
Stretching Vibration ◽  
Density Surface ◽  
Thermally Grown

AbstractThe structure of a thermally grown SiO2 film on a crystalline 6H‐SiC substrate was investigated using X‐ray reflectivity and fourier‐transformed infrared attenuated total reflection (FTIR‐ATR). The density, surface roughness and interface roughness of thermal oxide on 6H‐SiC were obtained by X‐ray reflectivity. The TO mode and the LO mode of Si‐O‐Si stretching vibration from the thermal oxide film on 6H‐SiC were obtained from polarized ATR spectra. The local structure of SiO2 film near the SiO2 /SiC interface was discussed from the measurements, and the thermally grown SiO2 film on a 6H‐SiC substrate was found to have a structural transition layer with thickness below 10 nm near the SiO2/SiC interface.

Study of Thermal Oxide Solid-State Reaction on GaAs Surfaces

1991 ◽  
Vol 238 ◽  
Author(s):  
Z. Lu ◽  
D. Chen ◽  
R. M. Osgood ◽  
D. V. Podlesnik
Keyword(s):  
Solid State ◽  
Solid State Reaction ◽  
Photoelectron Spectroscopy ◽  
Interface Reaction ◽  
Decomposition Reaction ◽  
Thermal Reaction ◽  
Native Oxide ◽  
X Ray ◽  
Temperature Range ◽  
Thermal Oxide

ABSTRACTIn this paper, we will present a study of the thermal reaction of AsjOs with GaAs at temperatures below 550°C using monochromatic X-ray photoelectron spectroscopy (MXPS). A solid-state interface reaction of 4GaAs + 3AS2O5 → 2Ga2O3 + 3AS2O3 + 4As, which includes the usual native oxide thermal reaction: 2GaAs + AS2O3 → Ga2O3 + 4As, as well as a decomposition reaction AS2O5 → AS2O3 + O2 is responsible for the thermal reaction in this temperature range.

Thermal oxide growth at chemical vapor deposited SiO2/Si interface during annealing evaluated by difference x-ray reflectivity

1997 ◽  
Vol 71 (14) ◽  
pp. 1954-1956 ◽  
Author(s):  
Naoki Awaji ◽  
Satoshi Ohkubo ◽  
Toshiro Nakanishi ◽  
Takayuki Aoyama ◽  
Yoshihiro Sugita ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Oxide Growth ◽  
X Ray ◽  
Thermal Oxide ◽  
Chemical Vapor Deposited

scholarly journals Thermal oxide patterning method for compensating coating stress in silicon substrates

2019 ◽  
Vol 27 (2) ◽  
pp. 1010 ◽  
Author(s):  
Youwei Yao ◽  
Brandon D. Chalifoux ◽  
Ralf K. Heilmann ◽  
Mark L. Schattenburg
Keyword(s):  
Silicon Substrates ◽  
Thermal Oxide ◽  
Coating Stress

Modification of Stress in CVD Tungsten Silicide (Polycide) Film by SiO2 Capping

2001 ◽  
Vol 695 ◽  
Author(s):  
Joshua Pelleg ◽  
E. Elish
Keyword(s):  
Chemical Vapor ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
Multilayered Film ◽  
Tungsten Silicide ◽  
X Ray ◽  
Lattice Parameter Variation ◽  
Thermal Oxide ◽  
Chemical Vapor Deposited ◽  
The Individual

ABSTRACTStresses in chemical vapor deposited polycide tungsten silicide (poly-Si/WSi2) wereevaluated at each stage of fabrication. The individual layers of the Si/SiO2/Poly-Si/WSi2/Poly-Si multilayer structure were deposited sequentially on separate wafers and subjected to x-ray diffraction analysis in the as deposited and annealed conditions to determine the changes in strain occurring in WSi2. Samples cut from wafers containing all the layers were capped with a 25nm thermal oxide and the strain in the WSi2 film was also analyzed by XRD. The change in strain of the WSi2 layer, following each step of the fabrication process, was evaluated by the lattice parameter variation of the c axis. The layers of the multilayered film affect the stress in the WSi2. A poly-Si layer on top of WSi2 reduces its stress, since it introduces a compressive component, which further decreases upon annealing. It also maintains a Si supply at the poly- Si/SiO2 interface, thus, eliminating Si outdiffusion during heat treatment in an oxygen containingambient. Capping the system by a thin oxide layer modifies the stress pattern of the WSi2, which becomes compressive.

Atomic Diffusion and Strain Measurement on Si Grating Structures by X-Ray Diffraction

1995 ◽  
Vol 380 ◽  
Author(s):  
So Tanaka ◽  
Christopher C. Umbach ◽  
Qun Shen ◽  
Jack M. Blakely
Keyword(s):  
Strain Measurement ◽  
Vacuum Annealing ◽  
Atomic Diffusion ◽  
Two Dimensional ◽  
X Ray Diffraction ◽  
Strain Measurements ◽  
X Ray ◽  
Thermal Oxide ◽  
Measured Strain ◽  
Morphology Changes

ABSTRACTWe have applied high resolution synchrotron X-ray diffraction to two-dimensional (2D) Si gratings with wavelengths of 300 and 400nm. We show that this method is very sensitive to both the geometry (grating wavelength, height, and angle of inclined sidewall) and the state of strain. Morphology changes produced by vacuum annealing can be detected so that the mass transport rates on Si surfaces can be measured. Strain measurements show that grating pillars covered with 1 lnm of thermal oxide were under tension (ε = 3.7 × 10−4). This strain was elastically relaxed by removing the oxide.

Effects of Residual Stress on Interfacial Bonding Strength of WC Coating

2009 ◽  
Vol 16-19 ◽  
pp. 10-14
Author(s):  
De Jun Kong ◽  
F. Yuan ◽  
Hong Miao
Keyword(s):  
Residual Stress ◽  
Residual Stresses ◽  
Bonding Strength ◽  
Flame Spraying ◽  
X Ray Diffraction ◽  
X Ray ◽  
Interfacial Bonding Strength ◽  
Stress Influences ◽  
Micro Structures ◽  
Coating Stress

The residual stresses of WC coating prepared by flame spraying and laser re-melting were measured quantitatively with X-ray diffraction (XRD) stress tester, and its micro-structures were observed with SEM, and the effects of residual stress on bonding strength of coating interface were analyzed. The experimental results are shown that residual stresses of WC coating are all tensile, and the effects of coating thickness on its residual stress is obvious, and residual stress is verse ratio with its thickness; Coating stress influences its cracking, tensile stress speeds its cracking, which causes its bonding strength decrease; The stress state is improved by decreasing its thickness, and its bonding strength can be increased.

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