Automated logic synthesis for electro-optic computing in integrated photonics

2019 ◽  
Author(s):  
Zhoufeng Ying ◽  
Zheng Zhao ◽  
Chenghao Feng ◽  
Rohan Mital ◽  
Shounak Dhar ◽  
...  
2018 ◽  
Vol 26 (21) ◽  
pp. 28002 ◽  
Author(s):  
Zhoufeng Ying ◽  
Zheng Zhao ◽  
Chenghao Feng ◽  
Rohan Mital ◽  
Shounak Dhar ◽  
...  

2003 ◽  
Vol 799 ◽  
Author(s):  
Carlos Angulo Barrios ◽  
Christopher Ian Thomas ◽  
Michael Spencer ◽  
Michal Lipson

ABSTRACTWe propose a compact 3C-SiC electro-optic modulator for high-speed Si-based integrated optoelectronics operating at 1.55-μm-wavelength. The device is based on an optical microresonator using sub-micron size high-index-contrast SiC waveguides on a SiC-SiO2-Si [SiC-on-Insulator (SICOI)] platform. Three different electrode configurations are analyzed. Switching times on the order of tens of ps are predicted by using low bias voltages.


Author(s):  
Zhoufeng Ying ◽  
Zheng Wang ◽  
Shounak Dhar ◽  
Zheng Zhao ◽  
David Z. Pan ◽  
...  

Author(s):  
S. G. Ghonge ◽  
E. Goo ◽  
R. Ramesh ◽  
R. Haakenaasen ◽  
D. K. Fork

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.


1997 ◽  
Vol 7 (9) ◽  
pp. 1893-1898 ◽  
Author(s):  
G. Schirripa Spagnolo ◽  
D. Ambrosini ◽  
A. Ponticiello ◽  
D. Paoletti

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