Raman transformation properties of partially coherent laser pulses in phosphorus-doped silica fibre

Author(s):  
Sergey M. Kobtsev ◽  
Aleksey Ivanenko ◽  
Alexey Kokhanovskiy ◽  
Mikhail Gervaziev ◽  
Sergey Smirnov
2015 ◽  
Vol 23 (14) ◽  
pp. 18548 ◽  
Author(s):  
Sergey Kobtsev ◽  
Sergey Kukarin ◽  
Alexey Kokhanovskiy

2018 ◽  
Vol 48 (5) ◽  
pp. 476-480
Author(s):  
N V Didenko ◽  
A V Konyashchenko ◽  
L L Losev ◽  
A V Tausenev ◽  
S Yu Tenyakov

1996 ◽  
Vol 104 (2) ◽  
pp. 607-615 ◽  
Author(s):  
Xue‐Pei Jiang ◽  
Moshe Shapiro ◽  
Paul Brumer

Author(s):  
A. Ourmazd ◽  
G.R. Booker ◽  
C.J. Humphreys

A (111) phosphorus-doped Si specimen, thinned to give a TEM foil of thickness ∼ 150nm, contained a dislocation network lying on the (111) plane. The dislocation lines were along the three <211> directions and their total Burgers vectors,ḇt, were of the type , each dislocation being of edge character. TEM examination under proper weak-beam conditions seemed initially to show the standard contrast behaviour for such dislocations, indicating some dislocation segments were undissociated (contrast A), while other segments were dissociated to give two Shockley partials separated by approximately 6nm (contrast B) . A more detailed examination, however, revealed that some segments exhibited a third and anomalous contrast behaviour (contrast C), interpreted here as being due to a new dissociation not previously reported. Experimental results obtained for a dislocation along [211] with for the six <220> type reflections using (g,5g) weak-beam conditions are summarised in the table below, together with the relevant values.


2002 ◽  
Vol 12 (3) ◽  
pp. 201-206 ◽  
Author(s):  
Janina Marciak-Kozłowska ◽  
Mirosław Kozłowski
Keyword(s):  

2001 ◽  
Vol 11 (PR2) ◽  
pp. Pr2-39-Pr2-42 ◽  
Author(s):  
M. Kado ◽  
T. Kawachi ◽  
N. Hasegawa ◽  
M. Tanaka ◽  
K. Sukegawa ◽  
...  

1979 ◽  
Vol 129 (9) ◽  
pp. 151
Author(s):  
G.S. Egorov ◽  
S.N. Mensov ◽  
Nikolai S. Stepanov

1999 ◽  
Vol 169 (1) ◽  
pp. 72 ◽  
Author(s):  
Aleksandr A. Andreev ◽  
V.E. Yashin ◽  
Aleksandr V. Charukhchev

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