Black silicon (BS) using room-temperature reactive ion etching (RT-RIE) for interdigitated back contact (IBC) silicon solar cells

Author(s):  
Francois Atteia ◽  
Judikaël Le Rouzo ◽  
Gérard Berginc ◽  
Jean-Jacques Simon ◽  
Ludovic Escoubas
2020 ◽  
Vol 131 ◽  
pp. 110973
Author(s):  
François Atteia ◽  
Judikaël Le Rouzo ◽  
Lou Denaix ◽  
David Duché ◽  
Gérard Berginc ◽  
...  

2013 ◽  
Vol 546 ◽  
pp. 275-278 ◽  
Author(s):  
Jinsu Yoo ◽  
Jun-Sik Cho ◽  
SeJin Ahn ◽  
Jihye Gwak ◽  
Ara Cho ◽  
...  

2013 ◽  
Vol 13 (12) ◽  
pp. 7806-7813 ◽  
Author(s):  
HyungYong Ji ◽  
Jaeho Choi ◽  
Gyoungho Lim ◽  
Bhaskar Parida ◽  
Keunjoo Kim ◽  
...  

2013 ◽  
Vol 52 (3S) ◽  
pp. 03BD01 ◽  
Author(s):  
Kwang Mook Park ◽  
Myoung Bok Lee ◽  
Kyeong Su Jeon ◽  
Sie Young Choi

2013 ◽  
Vol 42 (6) ◽  
pp. 649-653
Author(s):  
豆维江 DOU Wei-jiang ◽  
秦应雄 QIN Ying-xiong ◽  
巨小宝 JU Xiao-bao ◽  
李锴 LI Kai ◽  
徐挺 XU Ting

Solar Energy ◽  
2003 ◽  
Author(s):  
Douglas S. Ruby ◽  
Saleem Zaidi ◽  
S. Narayanan ◽  
Satoshi Yamanaka ◽  
Ruben Balanga

We developed a maskless plasma texturing technique for multicrystalline Si (mc-Si) cells using Reactive Ion Etching (RIE) that results in higher cell performance than that of standard untextured cells. Elimination of plasma damage has been achieved while keeping front reflectance to low levels. Internal quantum efficiencies higher than those on planar and wet-textured cells have been obtained, boosting cell currents and efficiencies by up to 6% on tricrystalline Si cells.


Sign in / Sign up

Export Citation Format

Share Document