Digital standard cells and operational amplifiers for operation up to 250 degrees C using low-cost CMOS technology

1996 ◽  
Author(s):  
Jens Stemmer ◽  
Joerg Ackermann ◽  
Dirk Uffmann ◽  
Jochen Aderhold
Keyword(s):  
Low Cost ◽  
Cmos Technology ◽  
Operational Amplifiers ◽  
Standard Cells

scholarly journals Growth of high-quality semiconducting tellurium films for high-performance p-channel field-effect transistors with wafer-scale uniformity

2022 ◽  
Vol 6 (1) ◽  
Author(s):  
Taikyu Kim ◽  
Cheol Hee Choi ◽  
Pilgyu Byeon ◽  
Miso Lee ◽  
Aeran Song ◽  
...  
Keyword(s):  
Field Effect ◽  
Physical Vapor Deposition ◽  
High Performance ◽  
Supply Voltage ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Three Dimensional ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Wafer Scale

AbstractAchieving high-performance p-type semiconductors has been considered one of the most challenging tasks for three-dimensional vertically integrated nanoelectronics. Although many candidates have been presented to date, the facile and scalable realization of high-mobility p-channel field-effect transistors (FETs) is still elusive. Here, we report a high-performance p-channel tellurium (Te) FET fabricated through physical vapor deposition at room temperature. A growth route involving Te deposition by sputtering, oxidation and subsequent reduction to an elemental Te film through alumina encapsulation allows the resulting p-channel FET to exhibit a high field-effect mobility of 30.9 cm2 V−1 s−1 and an ION/OFF ratio of 5.8 × 105 with 4-inch wafer-scale integrity on a SiO2/Si substrate. Complementary metal-oxide semiconductor (CMOS) inverters using In-Ga-Zn-O and 4-nm-thick Te channels show a remarkably high gain of ~75.2 and great noise margins at small supply voltage of 3 V. We believe that this low-cost and high-performance Te layer can pave the way for future CMOS technology enabling monolithic three-dimensional integration.

scholarly journals Fabrication of a CMOS-based Imaging Chip with Monolithically Integrated RGB and NIR Filters

Proceedings ◽  
2019 ◽  
Vol 2 (13) ◽  
pp. 751
Author(s):  
Bart Vereecke ◽  
Els Van Besien ◽  
Deniz Sabuncuoglu Tezcan ◽  
Nick Spooren ◽  
Nicolaas Tack ◽  
...  
Keyword(s):  
Bandpass Filter ◽  
Imaging System ◽  
Low Cost ◽  
Cmos Technology ◽  
Image Sensors ◽  
Single Chip ◽  
Interference Filters ◽  
Monolithically Integrated ◽  
Recent Developments

Recent developments in multispectral cameras have demonstrated how compact and low-cost spectral sensors can be made by monolithically integrating filters on top of commercially available image sensors. In this paper, the fabrication of a RGB + NIR variation to such a single-chip imaging system is described, including the integration of a metallic shield to minimize crosstalk, and two interference filters: a NIR blocking filter, and a NIR bandpass filter. This is then combined with standard polymer based RGB colour filters. Fabrication of this chip is done in imec’s 200 mm cleanroom using standard CMOS technology, except for the addition of RGB colour filters and microlenses, which is outsourced.

scholarly journals Impact of Fluid Flow on CMOS-MEMS Resonators Oriented to Gas Sensing

Sensors ◽  
2020 ◽  
Vol 20 (17) ◽  
pp. 4663
Author(s):  
Rafel Perello-Roig ◽  
Jaume Verd ◽  
Sebastià Bota ◽  
Jaume Segura
Keyword(s):  
Fluid Flow ◽  
Gas Sensing ◽  
Low Cost ◽  
Cmos Technology ◽  
Monolithically Integrated ◽  
Impact Reduction ◽  
Mems Resonators ◽  
Cmos Mems ◽  
Outstanding Result ◽  
The Impact

Based on experimental data, this paper thoroughly investigates the impact of a gas fluid flow on the behavior of a MEMS resonator specifically oriented to gas sensing. It is demonstrated that the gas stream action itself modifies the device resonance frequency in a way that depends on the resonator clamp shape with a corresponding non-negligible impact on the gravimetric sensor resolution. Results indicate that such an effect must be accounted when designing MEMS resonators with potential applications in the detection of volatile organic compounds (VOCs). In addition, the impact of thermal perturbations was also investigated. Two types of four-anchored CMOS-MEMS plate resonators were designed and fabricated: one with straight anchors, while the other was sustained through folded flexure clamps. The mechanical structures were monolithically integrated together with an embedded readout amplifier to operate as a self-sustained fully integrated oscillator on a commercial CMOS technology, featuring low-cost batch production and easy integration. The folded flexure anchor resonator provided a flow impact reduction of 5× compared to the straight anchor resonator, while the temperature sensitivity was enhanced to −115 ppm/°C, an outstanding result compared to the −2403 ppm/°C measured for the straight anchored structure.

scholarly journals Lead Selenide Polycrystalline Coatings Sensitized Using Diffusion and Ion Beam Methods for Uncooled Mid-Infrared Photodetection

Coatings ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 444 ◽  
Author(s):  
Hao Yang ◽  
Xiaojiang Li ◽  
Guodong Wang ◽  
Jianbang Zheng
Keyword(s):  
High Speed ◽  
Large Scale ◽  
Low Cost ◽  
Ion Beam ◽  
Lead Selenide ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Recombination Suppression ◽  
Mid Infrared ◽  
Physical Effects

Polycrystalline lead selenide material that is processed after a sensitization technology offers the additional physical effects of carrier recombination suppression and carrier transport manipulation, making it sufficiently sensitive to mid-infrared radiation at room temperature. Low-cost and large-scale integration with existing electronic platforms such as complementary metal–oxide–semiconductor (CMOS) technology and multi-pixel readout electronics enable a photodetector based on polycrystalline lead selenide coating to work in high-speed, low-cost, and low-power consumption applications. It also shows huge potential to compound with other materials or structures, such as the metasurface for novel optoelectronic devices and more marvelous properties. Here, we provide an overview and evaluation of the preparations, physical effects, properties, and potential applications, as well as the optoelectronic enhancement mechanism, of lead selenide polycrystalline coatings.

Design, Modeling and Simulation of CMOS-MEMS Piezoresistive Cantilever Based Carbon Dioxide Gas Sensor for Capnometry

2011 ◽  
Vol 403-408 ◽  
pp. 3769-3774 ◽  
Author(s):  
Asif Mirza ◽  
Nor Hisham Hamid ◽  
Mohd Haris Md Khir ◽  
Khalid Ashraf ◽  
M.T. Jan ◽  
...  
Keyword(s):  
Carbon Dioxide ◽  
Modeling And Simulation ◽  
Low Cost ◽  
Cmos Technology ◽  
Simulation Software ◽  
Dynamic Mode ◽  
Fully Differential ◽  
Carbon Dioxide Gas ◽  
Carbon Dioxide Co2 ◽  
Relative Change

This paper reports design, modeling and simulation of MEMS based sensor working in dynamic mode with fully differential piezoresistive sensing for monitoring the concentration of exhaled carbon dioxide (CO2) gas in human breath called capnometer. CO2 being a very important biomarker, it is desirable to extend the scope of its monitoring beyond clinical use to home and ambulatory services. Currently the scope of capnometers and its adaption is limited by high cost, large size and high power consumption of conventional capnometers . In recent years, MEMS based micro resonant sensors have received considerable attention due to their potential as a platform for the development of many novel physical, chemical, and biological sensors with small size, low cost and low power requirements. The sensor is designed using 0.35 micron CMOS technology. CoventorWare and MATLAB have been used as simulation software. According to the developed model and simulation results the resonator has resonant frequency 57393 Hz and mass sensitivity of 3.2 Hz/ng. The results show that the longitudinal relative change of resistance is 0.24%/µm while the transverse relative change of resistance is -0.03%/µm.

A Low-Cost Highly Reliable Spintronic True Random Number Generator Circuit for Secure Cryptography

SPIN ◽  
2019 ◽  
Vol 10 (01) ◽  
pp. 2050003 ◽  
Author(s):  
Iman Alibeigi ◽  
Abdolah Amirany ◽  
Ramin Rajaei ◽  
Mahmoud Tabandeh ◽  
Saeed Bagheri Shouraki
Keyword(s):  
High Speed ◽  
High Performance ◽  
Random Number ◽  
Low Cost ◽  
Random Number Generator ◽  
Magnetic Tunnel Junction ◽  
Random Number Generation ◽  
Cmos Technology ◽  
Random Numbers ◽  
Number Generation

Generation of random numbers is one of the most important steps in cryptographic algorithms. High endurance, high performance and low energy consumption are the attractive features offered by the Magnetic Tunnel Junction (MTJ) devices. Therefore, they have been considered as one of the promising candidates for next-generation digital integrated circuits. In this paper, a new circuit design for true random number generation using MTJs is proposed. Our proposed circuit offers a high speed, low power and a truly random number generation. In our design, we employed two MTJs that are configured in special states. Generated random bit at the output of the proposed circuit is returned to the write circuit to be written in the relevant cell for the next random generation. In a random bitstream, all bits must have the same chance of being “0”or “1”. We have proposed a new XOR-based method in this paper to resolve this issue in multiple random generators that produce truly random numbers with a different number of ones and zeros in the output stream. The simulation results using a 45[Formula: see text]nm CMOS technology with a special model of MTJ validated the advantages offered by the proposed circuit.

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