Towards optical amplification in complex functional oxides: exploring optical gain in erbium-doped yttria-stabilized zirconia waveguides

2019 ◽  
Author(s):  
Alicia Ruiz-Caridad ◽  
Guillaume Marcaud ◽  
Joan Manel Ramirez ◽  
Ludovic Largeau ◽  
Thomas Maroutian ◽  
...  
Keyword(s):  
Optical Gain ◽  
Yttria Stabilized Zirconia ◽  
Functional Oxides ◽  
Stabilized Zirconia ◽  
Optical Amplification ◽  
Erbium Doped

Visible Light Emission from Erbium Doped Yttria Stabilized Zirconia

2003 ◽  
Vol 789 ◽  
Author(s):  
Michael Cross ◽  
Walter Varhue
Keyword(s):  
Band Gap ◽  
Light Emission ◽  
Green Light ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Rare Earth Ion ◽  
Device Structure ◽  
Insulating Layer ◽  
Light Emitting ◽  
Erbium Doped

ABSTRACT: One of the major shortcomings of silicon (Si) as a semiconductor material is its inability to yield efficient light emission. There has been a continued interest in adding rare earth ion impurities such as erbium (Er) to the Si lattice to act as light emitting centers. The low band gap of Si however has complicated this practice by quenching and absorbing this possible emission. Increasing the band gap of the host has been successfully tried in the case of gallium nitride (GaN) [1] and Si-rich oxide (SRO) [2] alloys. A similar approach has been tried here, where Er oxide (ErOx) nanocrystals have been formed in a yttria stabilized zirconia (YSZ) host deposited on a Si (100) substrate. The YSZ is deposited as a heteroepitaxial, insulating layer on the Si substrate by a reactive sputtering technique. The Er is also incorporated by a sputtering process from a metallic target and its placement in the YSZ host can be easily controlled. The device structure formed is a simple metal contact/insulator/phosphor sandwich. The device has been found to emit visible green light at low bias voltages. The advantage of this material is that it is much more structured than SiO2 which can theoretically lead to higher emission intensity.

scholarly journals Erbium-Doped Yttria-Stabilized Zirconia Thin Layers for Photonic Applications

2020 ◽  
Vol 56 (2) ◽  
pp. 1-7 ◽  
Author(s):  
Alicia Ruiz-Caridad ◽  
Stephane Collin ◽  
Carlos Alonso-Ramos ◽  
Guillaume Agnus ◽  
Sylvain Guerber ◽  
...  
Keyword(s):  
Thin Layers ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Erbium Doped

Microstructural examination of modified yttria stabilized zirconia by EM analytical techniques

1986 ◽  
Vol 44 ◽  
pp. 842-843
Author(s):  
W. W. Davison ◽  
R. C. Buchanan
Keyword(s):  
Mechanical Properties ◽  
Analytical Techniques ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Transmission Microscopy ◽  
Sintering Aid ◽  
Densification Temperature ◽  
Chemical Inertness ◽  
Scanning Transmission ◽  
Microstructural Examination

Yttria stabilized zirconia (YSZ) has become a significant technological material due to its high ionic conductivity, chemical inertness, and good mechanical properties. Temperatures on the order of 1700°C are required, however, to densify YSZ to the degree necessary for good electrical and mechanical properties. A technique for lowering the densification temperature is the addition of small amounts of material which facilitate the formation of a liquid phase at comparatively low temperatures. In this study, sintered microstructures obtained from the use of Al2O3 as a sintering aid were examined with scanning, transmission, and scanning transmission microscopy (SEM, TEM, and STEM).

Characterizations of Synthetic 8mol% YSZ with Comparison to 3mol %YSZ for HT-SOFC

2020 ◽  
Vol 38 (4A) ◽  
pp. 491-500
Author(s):  
Abeer F. Al-Attar ◽  
Saad B. H. Farid ◽  
Fadhil A. Hashim
Keyword(s):  
Ionic Conductivity ◽  
Electrochemical Impedance ◽  
Structural Information ◽  
Impedance Analysis ◽  
High Energy ◽  
Yttria Stabilized Zirconia ◽  
X Ray Diffraction ◽  
Stabilized Zirconia ◽  
Powder Morphology ◽  
X Ray

In this work, Yttria (Y2O3) was successfully doped into tetragonal 3mol% yttria stabilized Zirconia (3YSZ) by high energy-mechanical milling to synthesize 8mol% yttria stabilized Zirconia (8YSZ) used as an electrolyte for high temperature solid oxide fuel cells (HT-SOFC). This work aims to evaluate the densification and ionic conductivity of the sintered electrolytes at 1650°C. The bulk density was measured according to ASTM C373-17. The powder morphology and the microstructure of the sintered electrolytes were analyzed via Field Emission Scanning Electron Microscopy (FESEM). The chemical analysis was obtained with Energy-dispersive X-ray spectroscopy (EDS). Also, X-ray diffraction (XRD) was used to obtain structural information of the starting materials and the sintered electrolytes. The ionic conductivity was obtained through electrochemical impedance spectroscopy (EIS) in the air as a function of temperatures at a frequency range of 100(mHz)-100(kHz). It is found that the 3YSZ has a higher density than the 8YSZ. The impedance analysis showed that the ionic conductivity of the prepared 8YSZ at 800°C is0.906 (S.cm) and it was 0.214(S.cm) of the 3YSZ. Besides, 8YSZ has a lower activation energy 0.774(eV) than that of the 3YSZ 0.901(eV). Thus, the prepared 8YSZ can be nominated as an electrolyte for the HT-SOFC.

Spectroscopic investigation of the electronic structure of yttria-stabilized zirconia

2018 ◽  
Vol 2 (3) ◽  
Author(s):  
Thomas Götsch ◽  
Erminald Bertel ◽  
Alexander Menzel ◽  
Michael Stöger-Pollach ◽  
Simon Penner
Keyword(s):  
Electronic Structure ◽  
Spectroscopic Investigation ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia

scholarly journals Influence of Preaging Temperature on the Indentation Strength of 3Y-TZP Aged in Ambient Atmosphere

Materials ◽  
2021 ◽  
Vol 14 (11) ◽  
pp. 2767
Author(s):  
Ki-Won Jeong ◽  
Jung-Suk Han ◽  
Gi-Uk Yang ◽  
Dae-Joon Kim
Keyword(s):  
Residual Stress ◽  
Phase Transformation ◽  
Low Temperature ◽  
Compressive Residual Stress ◽  
Yttria Stabilized Zirconia ◽  
Ambient Atmosphere ◽  
Aged Specimen ◽  
Stabilized Zirconia ◽  
M Phase ◽  
The Relationship

Yttria-stabilized zirconia (3Y-TZP) containing 0.25% Al2O3, which is resistant to low temperature degradation (LTD), was aged for 10 h at 130–220 °C in air. The aged specimens were subsequently indented at loads ranging from 9.8 to 490 N using a Vickers indenter. The influence of preaging temperature on the biaxial strength of the specimens was investigated to elucidate the relationship between the extent of LTD and the strength of zirconia restorations that underwent LTD. The indented strength of the specimens increased as the preaging temperature was increased higher than 160 °C, which was accompanied by extensive t-ZrO2 (t) to m-ZrO2 (m) and c-ZrO2 (c) to r-ZrO2 (r) phase transformations. The influence of preaging temperature on the indented strength was rationalized by the residual stresses raised by the t→m transformation and the reversal of tensile residual stress on the aged specimen surface due to the indentation. The results suggested that the longevity of restorations would not be deteriorated if the aged restorations retain compressive residual stress on the surface, which corresponds to the extent of t→m phase transformation less than 52% in ambient environment.

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