Defect analysis and classification in process control using an SEM and EDX review station

Author(s):  
Pascal Perret ◽  
Vincent Zinssner
2020 ◽  
Vol 1004 ◽  
pp. 299-305
Author(s):  
Matthias Kocher ◽  
Holger Schlichting ◽  
Birgit Kallinger ◽  
Mathias Rommel ◽  
Anton J. Bauer ◽  
...  

In this study, UV Photoluminescence (UVPL) and Differential Interference Contrast (DIC) mapping was applied for process control of a 1.2 kV 4H-SiC VDMOS fabrication process at different process stages in order to investigate the influence of shallow pits on the electrical behavior of the devices. In particular, it could be shown that UVPL and DIC mapping allows the correlation of shallow pits and the occurrence of darker regions in the UVPL images and distinguishing differently implanted regions at distinct process stages. By comparing the darker regions of the UVPL scan with the electrical blocking characteristics of the associated devices a direct correlation between the occurrence of shallow pits and the reduction of the blocking capability of the devices could be observed.


Author(s):  
Martin J. Mahon ◽  
Patrick W. Keating ◽  
John T. McLaughlin

Coatings are applied to appliances, instruments and automobiles for a variety of reasons including corrosion protection and enhancement of market value. Automobile finishes are a highly complex blend of polymeric materials which have a definite impact on the eventual ability of a car to sell. Consumers report that the gloss of the finish is one of the major items they look for in an automobile.With the finish being such an important part of the automobile, there is a zero tolerance for paint defects by auto assembly plant management. Owing to the increased complexity of the paint matrix and its inability to be “forgiving” when foreign materials are introduced into a newly applied finish, the analysis of paint defects has taken on unparalleled importance. Scanning electron microscopy with its attendant x-ray analysis capability is the premier method of examining defects and attempting to identify their root cause.Defects are normally examined by cutting out a coupon sized portion of the autobody and viewing in an SEM at various angles.


Author(s):  
David J. Smith

The electron microscope has evolved to the level where it is now straightforward to record highresolution images from thin samples (t∼10 to 20nm) that are directly interpretable in terms of atomic arrangements. Whilst recorded images necessarily represent two-dimensional projections of the structure, many defects such as dislocations and interfaces may be linear or planar in nature and thus might be expected to be amenable to detailed characterization. In this review, we briefly consider the recent significant progress that has been made in quantitative defect analysis using the high-resolution electron microscope and then discuss some drawbacks to the technique as well as potential scope for further improvements. Surveys of defect modelling for some small-unit-cell materials and interfaces have recently been published, and reference should be made to other papers in this symposium for further examples.The technique of structure imaging originated in the early '70s with observations of large-unit-cell block oxides.


1956 ◽  
Vol 48 (2) ◽  
pp. 81-84
Author(s):  
William Priestley ◽  
B. Dudenbostel, Jr.

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