Incoherent digital holography using geometric phase

Author(s):  
Sung-Wook Min ◽  
KiHong Choi
2017 ◽  
Vol 42 (19) ◽  
pp. 3940 ◽  
Author(s):  
KiHong Choi ◽  
Junkyu Yim ◽  
Seunghwi Yoo ◽  
Sung-Wook Min

Sensors ◽  
2021 ◽  
Vol 21 (16) ◽  
pp. 5624
Author(s):  
Jonghyun Lee ◽  
Youngrok Kim ◽  
Kihong Choi ◽  
Joonku Hahn ◽  
Sung-Wook Min ◽  
...  

We propose a compressive self-interference incoherent digital holography (SIDH) with a geometric phase metalens for section-wise holographic object reconstruction. We specify the details of the SIDH with a geometric phase metalens design that covers the visible wavelength band, analyze a spatial distortion problem in the SIDH and address a process of a compressive holographic section-wise reconstruction with analytic spatial calibration. The metalens allows us to realize a compressive SIDH system in the visible wavelength band using an image sensor with relatively low bandwidth. The operation of the proposed compressive SIDH is verified through numerical simulations.


2020 ◽  
Vol 59 (7) ◽  
pp. 1948
Author(s):  
Kihong Choi ◽  
Keehoon Hong ◽  
Joongki Park ◽  
Sung-Wook Min

2019 ◽  
Vol 67 (2) ◽  
pp. 92-98 ◽  
Author(s):  
Dong Liang ◽  
Qiu Zhang ◽  
Jing Wang ◽  
Jun Liu

2016 ◽  
Vol 41 (11) ◽  
pp. 2648 ◽  
Author(s):  
Boaz Jessie Jackin ◽  
C. S. Narayanamurthy ◽  
Toyohiko Yatagai

Author(s):  
Jayhoon Chung ◽  
Guoda Lian ◽  
Lew Rabenberg

Abstract Since strain engineering plays a key role in semiconductor technology development, a reliable and reproducible technique to measure local strain in devices is necessary for process development and failure analysis. In this paper, geometric phase analysis of high angle annular dark field - scanning transmission electron microscope images is presented as an effective technique to measure local strains in the current node of Si based transistors.


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