1.3 µm U-bend traveling wave SOA devices for high efficiency coupling to silicon photonics

2019 ◽  
Author(s):  
Jukka Viheriälä ◽  
Heidi Tuorila ◽  
Nouman Zia ◽  
Matteo Cherchi ◽  
Timo Aalto ◽  
...  
Author(s):  
Xinyi Li ◽  
Hongxia Cheng ◽  
Guang Yang ◽  
Ying Li ◽  
Pengchao Huang ◽  
...  

Author(s):  
Lorenzo Luigi L. Columbo ◽  
Jock Bovington ◽  
Dominic Siriani ◽  
Sebastian Romero-Garcia ◽  
Mariangela Gioannini

Author(s):  
Daxi Ji ◽  
Ling Zhu ◽  
Wanchao Huang ◽  
Hang Tian ◽  
Yun Chen ◽  
...  

2000 ◽  
Vol 61 (4) ◽  
pp. 4450-4453 ◽  
Author(s):  
Yunyuan Yang ◽  
Wu Ding

1991 ◽  
Author(s):  
John A. Nation ◽  
J. D. Ivers ◽  
G. Kerslick ◽  
Donald A. Shiffler ◽  
Levi Schaechter

2018 ◽  
Vol 43 (6) ◽  
pp. 1319 ◽  
Author(s):  
Shimao Li ◽  
Yunhong Ding ◽  
Xiaowei Guan ◽  
Heyun Tan ◽  
Zhichao Nong ◽  
...  

1996 ◽  
Vol 68 (16) ◽  
pp. 2186-2188 ◽  
Author(s):  
A. D’ Ottavi ◽  
F. Martelli ◽  
P. Spano ◽  
A. Mecozzi ◽  
S. Scotti ◽  
...  

2020 ◽  
Vol 238 ◽  
pp. 01005
Author(s):  
David J. Thomson ◽  
Weiwei Zhang ◽  
Ke Li ◽  
Kapil Debnath ◽  
Shenghao Liu ◽  
...  

The high speed conversion of signals between the optical and electrical domains is crucial for many key applications of silicon photonics. Electro-optic modulators integrated with electronic drive amplifiers are typically used to convert an electrical signal to the optical domain. Design of these individual elements is important to achieve high performance, however a true optimisation requires careful co-design of the photonic and electronic components considering the properties of each other. Here we present our recent results in this area together with a MOSCAP type modulator with the potential for high speed, high efficiency and highly linear modulation.


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