Maskless fabrication of multifocal microlens arrays on silica glass by multi-step laser-tunable wet etching method

2018 ◽  
Author(s):  
yifeng Xiao ◽  
liang Wu ◽  
yangfei Xu ◽  
minaghua Zhang ◽  
Jinwen Qian ◽  
...  
Keyword(s):  
Silica Glass ◽  
Wet Etching ◽  
Microlens Arrays ◽  
Etching Method

scholarly journals Maskless fabrication of concave microlens arrays on silica glasses by a femtosecond-laser-enhanced local wet etching method

2010 ◽  
Vol 18 (19) ◽  
pp. 20334 ◽  
Author(s):  
Feng Chen ◽  
Hewei Liu ◽  
Qing Yang ◽  
Xianhua Wang ◽  
Cong Hou ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Wet Etching ◽  
Microlens Arrays ◽  
Silica Glasses ◽  
Etching Method

scholarly journals Ni-Solder (Pb/Sn) Selective Wet-Etching Method in Acidic Solutions.

1999 ◽  
Vol 2 (1) ◽  
pp. 29-34
Author(s):  
Yukio KIZAKI ◽  
Kazuhito HIGUCHI ◽  
Soichi HONMA ◽  
Hiroshi YAMADA
Keyword(s):  
Wet Etching ◽  
Acidic Solutions ◽  
Etching Method

Low-Cost Wet-Etching Method to Fabricate a Robust THz Tri-Layer Polarizer With a High Extinction Ratio

2021 ◽  
Author(s):  
Zhe Huang ◽  
Hau Ping Chan ◽  
Emma Pickwell-MacPherson ◽  
Edward P. J. Parrott
Keyword(s):  
Low Cost ◽  
Extinction Ratio ◽  
Wet Etching ◽  
High Extinction Ratio ◽  
Etching Method

Etching a Micro-Trench with a Maximum Aspect Ratio of 60 on Silica Glass byLaser-Induced Backside Wet Etching(LIBWE)

2005 ◽  
Vol 44 (No. 5) ◽  
pp. L176-L178 ◽  
Author(s):  
Yoshizo Kawaguchi ◽  
Tadatake Sato ◽  
Aiko Narazaki ◽  
Ryozo Kurosaki ◽  
Hiroyuki Niino
Keyword(s):  
Aspect Ratio ◽  
Silica Glass ◽  
Wet Etching

scholarly journals Laser-induced backside wet etching of silica glass with ns-pulsed DPSS UV laser at the repetition rate of 40 kHz

2007 ◽  
Vol 59 ◽  
pp. 539-542 ◽  
Author(s):  
Hiroyuki Niino ◽  
Yoshizo Kawaguchi ◽  
Tadatake Sato ◽  
Aiko Narazaki ◽  
Thomas Gumpenberger ◽  
...  
Keyword(s):  
Repetition Rate ◽  
Silica Glass ◽  
Wet Etching ◽  
Uv Laser

Magnetoresistive Switch Effect and Its Application to Magnetic Field Sensors

2005 ◽  
Vol 475-479 ◽  
pp. 2223-2226
Author(s):  
Zhi-gang Sun ◽  
Masaki Mizuguchi ◽  
Hiroyuki Akinaga
Keyword(s):  
Magnetic Field ◽  
Magnetic Fields ◽  
Threshold Voltage ◽  
Wet Etching ◽  
Magnetic Field Sensors ◽  
Field Sensitivity ◽  
Gaas Substrates ◽  
Etching Method ◽  
Magnetic Filed ◽  
The Magnetic Field

Magnetoresistive switch effect (MRS effect) devices containing two gold (Au) electrodes with a gap less than 2 µm were successfully fabricated on semi-insulting GaAs substrates by wet etching method. Huge MRS effect was observed. Magnetoresistance (MR) ratio reached 1,000,000% under the magnetic filed of 1.5 T when the devices were operated just above the threshold voltage. The magnetic field sensitivity at small magnetic fields was significantly improved. MR ratio of more than 1000% was achieved at 0.03 T. A relative high MR ratio of 100,000% under the magnetic filed of 1.5 T was also achieved when the devices operating before the threshold voltage.

Effect of Electrochemical Reaction Enviroment on the Surface Morphology and Photoluminescence of Porous Silicon

2013 ◽  
Vol 737 ◽  
pp. 60-66
Author(s):  
Ali Syari’ati ◽  
Veinardi Suendo
Keyword(s):  
Porous Silicon ◽  
Surface Morphology ◽  
Silicon Oxide ◽  
Quantum Confinement Effect ◽  
Etching Rate ◽  
Green Emission ◽  
Wet Etching ◽  
Electrochemical Anodization ◽  
Etching Method ◽  
Silicon Based

Porous silicon (p-Si) is a well-known silicon based material that can emit visible light at room temperature. The radiative recombination that originated from quantum confinement effect shows photoluminescence (PL) in red, while the defect on silicon oxide at the surface of p-Si shows in blue-green region. Porous silicon can be synthesized through two methods; wet-etching and electrochemical anodization using hydrofluoric acid as the main electrolyte. The electrochemical anodization is more favorable due to faster etching rate at the surface than the conventional wet-etching method. The objective of this research is to show that both of porous silicons can be synthesized using the same main electrolyte but by varying the reaction environment during anodization/etching process. Here, we shows the wet-etching method that enhanced by polarization concentration will produce porous silicon with silicon oxide defects by means blue-green emission, while direct electrochemical anodization will produce samples that emit red PL signal. The effect of introducing KOH into the electrolyte was also studied in the case of enhanced-wet-etching method. Surface morphology of porous silicon and their photoluminescence were observed by Scanning Electron Microscope and PL spectroscopy, respectively.

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