Structural and optical characterization of the high quality Be-doped InAs epitaxial layer grown on GaAs substrate

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Krzysztof Murawski ◽  
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RSC Advances ◽  
2016 ◽  
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Min-Han Lin

A high-grade cubic ZnS substrate crystal with longer range order and a strong band-edge emission was clearly demonstrated.


2002 ◽  
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2005 ◽  
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Norbert Leinfellner ◽  
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Angela Duparre ◽  
Josep Ferre-Borrull ◽  
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2002 ◽  
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