Microelectronic frequency transducers of magnetic field with Hall elements

2018 ◽  
Author(s):  
Tomasz Zyska ◽  
Alexander Osadchuk ◽  
Vladimir Osadchuk ◽  
Iaroslav Osadchuk ◽  
Ayzhan Zhanpeisova
Keyword(s):  
Magnetic Field ◽  
Hall Elements

scholarly journals Low-Offset In-Plane Sensitive Hall Arrangement

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 713
Author(s):  
Siya Lozanova ◽  
Ivan Kolev ◽  
Avgust Ivanov ◽  
Chavdar Roumenin
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Output Voltage ◽  
Cross Coupling ◽  
The Novel ◽  
Temperature Drift ◽  
Low Offset ◽  
First Time ◽  
Single Configuration ◽  
Hall Elements

A novel in-plane sensitive Hall arrangement consisting of two identical n-Si three-contact (3C) elements and realized in a common technological process, is presented. In the solution, the minimization of the offset and its temperature drift is achieved by cross-coupling of the outer device contacts. This terminals’ connection provides equalizing currents between the two substrates which strongly compensate the inevitable difference in the electrical conditions in the two parts of the arrangement. As a result, the residual offset of both integrated Hall elements at the output Vout(0) and its temperature drift are strongly minimized. The residual offset is about 160 times smaller than the single-configuration one. The obtained output voltage-to-residual offset ratio at sensitivity of SRI ≈ 98 V/AT is very promising, reaching 6 × 103 at temperature T = 40 °C and induction 1 T. As a result, increased metrological accuracy for numerous applications is achieved. For a first time through the novel arrangement a suppression of sensitivity in the presence of external magnetic field could be achieved in order to obtain permanent offset information. This is one of the key results in the Hall device investigation.

Large-Scale Graphene on Hexagonal-BN Hall Elements: Prediction of Sensor Performance without Magnetic Field

ACS Nano ◽  
2016 ◽  
Vol 10 (9) ◽  
pp. 8803-8811 ◽  
Author(s):  
Min-Kyu Joo ◽  
Joonggyu Kim ◽  
Ji-Hoon Park ◽  
Van Luan Nguyen ◽  
Ki Kang Kim ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Large Scale ◽  
Sensor Performance ◽  
Hall Elements

scholarly journals Coupling effect in field Hall elements based on thin-film SOI MOS transistors

2020 ◽  
Vol 6 (4) ◽  
pp. 155-158
Author(s):  
Aleksey V. Leonov ◽  
Victor N. Murashev ◽  
Dmitry N. Ivanov ◽  
V.D. Kirilov
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Coupling Effect ◽  
Silicon On Insulator ◽  
Mos Transistors ◽  
Magnetic Field Sensors ◽  
Magnetic Sensitivity ◽  
Hall Elements

The influence of the coupling effect on the parameters of field Hall elements based on thin-film MOS transistors has been studied. Analysis of the development of today’s microelectronics shows the necessity of developing the element base for high performance sensors based on silicon technologies. One way to significantly improve the performance of sensing elements including magnetic field sensors is the use of thin-film transistors on the basis of silicon on insulator (SOI) structures. It has been shown that field Hall sensors (FHS) may become the basis of high-performance magnetic field sensors employing the coupling effect occurring in the double gate vertical topology of these sensing elements. Electrophysical studies of FHS have been conducted for different gate bias and power supply modes. The results show that the coupling effect between the gates occurs in FHS if the thickness of the working layer between the gates is 200 nm. This effect leads to an increase in the effective carrier mobility and hence an increase in the magnetic sensitivity of the material. Thus field Hall elements based on thin-film transistors fabricated using silicon technologies provide for a substantial increase in the magnetic sensitivity of the elements and allow their application in highly reliable magnetic field sensors.

On the Controlling of Spherical Ultrasonic Motor

2013 ◽  
Vol 325-326 ◽  
pp. 1115-1125 ◽  
Author(s):  
Liviu Ciupitu ◽  
Adrian Olaru ◽  
Shigeki Toyama
Keyword(s):  
Magnetic Field ◽  
Inverse Kinematics ◽  
Research Team ◽  
Spherical Shape ◽  
Ultrasonic Motor ◽  
New Method ◽  
Residual Magnetic Field ◽  
New Type ◽  
Hall Sensors ◽  
Hall Elements

Research team of Prof. Shigeki TOYAMA has developed at Tokyo University of A&T a new type of ultrasonic motor. Its spherical shape confer 2 or 3 degree of freedom in a single joint which makes it suitable for mechatronics field. In order to control the Spherical Ultrasonic Motor a new method by using Hall sensors and a residual magnetic field induced in rotor was implemented. Present paper is dealing with the command and the control of a SUM by using Hall elements and a residual magnetic field induced in rotor. In this way the approach of controlling problem is by using the inverse kinematics and neuronal networks.

scholarly journals Charge-coupling effect in a Hall field element based on thin-film SOI-MOS transistor

2021 ◽  
Vol 24 (1) ◽  
pp. 57-62
Author(s):  
A. V. Leonov ◽  
V. N. Murashev ◽  
D. N. Ivanov ◽  
V. D. Kirilov
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Coupling Effect ◽  
Silicon On Insulator ◽  
Magnetic Field Sensors ◽  
Mos Transistor ◽  
Magnetic Sensitivity ◽  
Hall Elements

The influence of the coupling effect on the parameters of field Hall elements based on thin-film MOS transistors has been studied. Analysis of the development of today’s microelectronics shows the necessity of developing the element base for high performance sensors based on silicon technologies. One way to significantly improve the performance of sensing elements including magnetic field sensors is the use of thin-film transistors on the basis of silicon on insulator (SOI) structures. It has been shown that field Hall sensors (FHS) may become the basis of high-performance magnetic field sensors employing the coupling effect occurring in the double gate vertical topology of these sensing elements. Electrophysical studies of FHS have been conducted for different gate bias and power supply modes. The results show that the coupling effect between the gates occurs in FHS if the thickness of the working layer between the gates is 200 nm. This effect leads to an increase in the effective carrier mobility and hence an increase in the magnetic sensitivity of the material. Thus field Hall elements based on thin-film transistors fabricated using silicon technologies provide for a substantial increase in the magnetic sensitivity of the elements and allow their application in highly reliable magnetic field sensors.

A New 3-Axis Magnetic Field Measurement System Based on Hall Elements

2004 ◽  
Vol 14 (2) ◽  
pp. 1814-1817 ◽  
Author(s):  
E. Hirose ◽  
K.H. Tanaka ◽  
T. Takahashi ◽  
Y. Sato ◽  
K. Agari ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Measurement System ◽  
Field Measurement ◽  
Magnetic Field Measurement ◽  
Hall Elements

scholarly journals Micro Magnetic Field Sensors Manufactured Using a Standard 0.18-μm CMOS Process

Micromachines ◽  
2018 ◽  
Vol 9 (8) ◽  
pp. 393 ◽  
Author(s):  
Yen-Nan Lin ◽  
Ching-Liang Dai
Keyword(s):  
Magnetic Field ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Magnetic Field Sensors ◽  
Sensor Sensitivity ◽  
Sensor Fabrication ◽  
The Magnetic Field ◽  
Hall Elements

Micro magnetic field (MMF) sensors developed employing complementary metal oxide semiconductor (CMOS) technology are investigated. The MMF sensors, which are a three-axis sensing type, include a magnetotransistor and four Hall elements. The magnetotransistor is utilized to detect the magnetic field (MF) in the x-axis and y-axis, and four Hall elements are used to sense MF in the z-axis. In addition to emitter, bases and collectors, additional collectors are added to the magnetotransistor. The additional collectors enhance bias current and carrier number, so that the sensor sensitivity is enlarged. The MMF sensor fabrication is easy because it does not require post-CMOS processing. Experiments depict that the MMF sensor sensitivity is 0.69 V/T in the x-axis MF and its sensitivity is 0.55 V/T in the y-axis MF.

Micromachined hall elements for two-dimensional magnetic-field sensing

1994 ◽  
Vol 40 (2) ◽  
pp. 141-146 ◽  
Author(s):  
S. Kawahito ◽  
S.O. Choi ◽  
M. Ishida ◽  
T. Nakamura
Keyword(s):  
Magnetic Field ◽  
Two Dimensional ◽  
Field Sensing ◽  
Hall Elements ◽  
Magnetic Field Sensing

Magnetic-field strengths from optical polarization data

1967 ◽  
Vol 31 ◽  
pp. 381-383
Author(s):  
J. M. Greenberg
Keyword(s):  
Magnetic Field ◽  
Optical Polarization ◽  
Polarization Data ◽  
Term Model ◽  
Source Of Information ◽  
Field Strengths

Van de Hulst (Paper 64, Table 1) has marked optical polarization as a questionable or marginal source of information concerning magnetic field strengths. Rather than arguing about this–I should rate this method asq+-, or quarrelling about the term ‘model-sensitive results’, I wish to stress the historical point that as recently as two years ago there were still some who questioned that optical polarization was definitely due to magnetically-oriented interstellar particles.

Observing the galactic magnetic field

1967 ◽  
Vol 31 ◽  
pp. 375-380
Author(s):  
H. C. van de Hulst
Keyword(s):  
Magnetic Field ◽  
Fair Agreement ◽  
Solar Neighbourhood ◽  
Galactic Magnetic Field ◽  
The Magnetic Field

Various methods of observing the galactic magnetic field are reviewed, and their results summarized. There is fair agreement about the direction of the magnetic field in the solar neighbourhood:l= 50° to 80°; the strength of the field in the disk is of the order of 10-5gauss.

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