Short-wavelength optical storage properties of GeSb2Te4 phase-change thin films

1996 ◽  
Author(s):  
Liqiu Q. Men ◽  
Fusong S. Jiang ◽  
Chao Liu ◽  
Huiyong Liu ◽  
Fuxi Gan
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Short Wavelength ◽  
Optical Storage ◽  
Storage Properties

Preparation and short-wavelength optical storage properties of Ge-Te alloy phase change thin film

1998 ◽  
Author(s):  
Huiyong Liu ◽  
Fusong S. Jiang ◽  
Liqiu Q. Men ◽  
Zhengxiu Fan ◽  
Fuxi Gan
Keyword(s):  
Thin Film ◽  
Phase Change ◽  
Short Wavelength ◽  
Optical Storage ◽  
Storage Properties

Evolution Of Crystalline Microstructure in GeTe Thin Films for Optical Storage Applications

1994 ◽  
Vol 343 ◽  
Author(s):  
M. Libera
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Optical Storage ◽  
Microstructural Development ◽  
Multilayered Media ◽  
Time Resolved ◽  
Constant Rate ◽  
Individual Contributions ◽  
The Individual ◽  
Transmission Studies

ABSTRACTThe bit-erase process in phase-change optical storage is based on the amorphous to crystalline transformation. While there has been significant progress developing compositions and multilayered media for phase-change applications, quantitative studies of the crystallization kinetics and microstructural development are generally lacking. This paper describes work quantifying crystallization in GeTe thin films. Microstructural changes during isothermal annealing are measured using in-situ hot-stage optical microscopy. This technique measures the fraction crystallized, the number of crystallites, and crystallite radii as a function of time. These data are sufficient to deconvolute the individual contributions of nucleation and growth. We find an Avrami exponent of ∼4, consistent with time-resolved reflection/transmission studies. This exponent is due to 2-D growth at a constant rate plus transient nucleation. The data are used in a kinetic model to simulate non-isothermal crystallization during focused-laser heating characteristic of the bit-erase process.

Optical and Short-Wavelength Recording Properties of InSbTe Phase Change Thin Films

1996 ◽  
Vol 158 (2) ◽  
pp. 579-586 ◽  
Author(s):  
Liqiu Men ◽  
Fusong Jiang ◽  
Fuxi Gan
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Short Wavelength

Effect of indium doping on Ge2Sb2Te5 thin films for phase-change optical storage

2005 ◽  
Vol 80 (8) ◽  
pp. 1611-1616 ◽  
Author(s):  
K. Wang ◽  
C. Steimer ◽  
D. Wamwangi ◽  
S. Ziegler ◽  
M. Wuttig
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Optical Storage ◽  
Indium Doping

scholarly journals Nonvolatile and reconfigurable tuning of surface lattice resonances using phase-change Ge2Sb2Te5 thin films

2021 ◽  
Vol 22 ◽  
pp. 103897
Author(s):  
Xingzhe Shi ◽  
Changshui Chen ◽  
Songhao Liu ◽  
Guangyuan Li
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Surface Lattice

scholarly journals Introduction of Chalcogenide Glasses to Additive Manufacturing: Nanoparticle Ink Formulation, Inkjet Printing, and Phase Change Devices Fabrication

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
A. Ahmed Simon ◽  
B. Badamchi ◽  
H. Subbaraman ◽  
Y. Sakaguchi ◽  
L. Jones ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Inkjet Printing ◽  
Chalcogenide Glasses ◽  
Dip Coating ◽  
Potential Applications ◽  
Coating Methods ◽  
Report Data ◽  
Nanoparticle Ink ◽  
Ink Formulation

AbstractChalcogenide glasses are one of the most versatile materials that have been widely researched because of their flexible optical, chemical, electronic, and phase change properties. Their application is usually in the form of thin films, which work as active layers in sensors and memory devices. In this work, we investigate the formulation of nanoparticle ink of Ge–Se chalcogenide glasses and its potential applications. The process steps reported in this work describe nanoparticle ink formulation from chalcogenide glasses, its application via inkjet printing and dip-coating methods and sintering to manufacture phase change devices. We report data regarding nanoparticle production by ball milling and ultrasonication along with the essential characteristics of the formed inks, like contact angle and viscosity. The printed chalcogenide glass films were characterized by Raman spectroscopy, X-ray diffraction, energy dispersive spectroscopy and atomic force microscopy. The printed films exhibited similar compositional, structural, electronic and optical properties as the thermally evaporated thin films. The crystallization processes of the printed films are discussed compared to those obtained by vacuum thermal deposition. We demonstrate the formation of printed thin films using nanoparticle inks, low-temperature sintering and proof for the first time, their application in electronic and photonic temperature sensors utilizing their phase change property. This work adds chalcogenide glasses to the list of inkjet printable materials, thus offering an easy way to form arbitrary device structures for optical and electronic applications.

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