Influence of the p-type doping of the InP cladding layer on the threshold current density in 1.5 um QW lasers

1991 ◽  
Author(s):  
Bernard Sermage ◽  
M. Blez ◽  
Christophe Kazmierski ◽  
Abdallah Ougazzaden ◽  
Andrei Mircea ◽  
...  
Keyword(s):  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Cladding Layer ◽  
P Type

Influence of the P type doping of the InP cladding layer on the threshold current density in 1.5μm Q.W. lasers

2005 ◽  
Author(s):  
B. Sermage ◽  
M. Blez ◽  
C. Kazmierski ◽  
A. Ougazzaden ◽  
A. Mircea ◽  
...  
Keyword(s):  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Cladding Layer ◽  
P Type

scholarly journals Performance characteristics of GaN/Al0.2Ga0.8N quantum dot laser at L=100Å

2018 ◽  
Vol 65 (1) ◽  
pp. 38
Author(s):  
Halima Bouchenafa ◽  
Boucif Benichou ◽  
Badra Bouabdallah
Keyword(s):  
Quantum Dot ◽  
Semiconductor Lasers ◽  
Current Density ◽  
Matrix Theory ◽  
Optical Gain ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Low Threshold ◽  
P Type ◽  
Density Matrix Theory

In this paper, a theoretical model is used to study the optical gain characteristics of  quantum dot lasers. The model is based on the density matrix theory of semiconductor lasers with relaxation broadening. The effect of doping with varying the side lengths of the box in the structure is taken into account. A comparative study of the gain spectra of p-doped, undoped and n-doped structures of  cubic quantum-dot (QD) laser respectively, is presented for various side lengths. The variation of peak gain on carrier density is also presented. The effect of side length on the variation in modal gain versus current density is plotted too. The results indicate that the p type doping is efficient to reach a better optical gain value, and to achieve low threshold current densities compared with undoped and  n-doped structures, and the optimum value for quantum dot width to achieve the lower threshold current density for the three cases is L=100A .   

Reduced threshold current density of GaN-based green laser diode by applying polarization doping p-cladding layer

2021 ◽  
Vol 19 (12) ◽  
pp. 121404
Author(s):  
Lingrong Jiang ◽  
Jianping Liu ◽  
Lei Hu ◽  
Liqun Zhang ◽  
Aiqin Tian ◽  
...  
Keyword(s):  
Laser Diode ◽  
Current Density ◽  
Threshold Current ◽  
Green Laser ◽  
Threshold Current Density ◽  
Cladding Layer

scholarly journals Investigation of the Optimum Mg Doping Concentration in p-Type-Doped Layers of InGaN Blue Laser Diode Structures

Crystals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1335
Author(s):  
Chibuzo Onwukaeme ◽  
Han-Youl Ryu
Keyword(s):  
Output Power ◽  
Laser Diode ◽  
Doping Concentration ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Blue Laser ◽  
Electron Blocking Layer ◽  
Mg Doping ◽  
Cladding Layer ◽  
P Type

In GaN-based laser diode (LD) structures, Mg doping in p-type-doped layers has a significant influence on the device performance. As the doping concentration increases, the operation voltage decreases, whereas the output power decreases as a result of increased optical absorption, implying that optimization of the Mg doping concentration is required. In this study, we systematically investigated the effect of the Mg doping concentration in the AlGaN electron-blocking layer (EBL) and the AlGaN p-cladding layer on the output power, forward voltage, and wall-plug efficiency (WPE) of InGaN blue LD structures using numerical simulations. In the optimization of the EBL, an Al composition of 20% and an Mg doping concentration of 3 × 1019 cm−3 exhibited the best performance, with negligible electron leakage and a high WPE. The optimum Mg concentration of the p-AlGaN cladding layer was found to be ~1.5 × 1019 cm−3, where the maximum WPE of 38.6% was obtained for a blue LD with a threshold current density of 1 kA/cm2 and a slope efficiency of 2.1 W/A.

Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 µm

1979 ◽  
Vol 18 (9) ◽  
pp. 1795-1805 ◽  
Author(s):  
Yoshio Itaya ◽  
Yasuharu Suematsu ◽  
Shinya Katayama ◽  
Katsumi Kishino ◽  
Shigehisa Arai
Keyword(s):  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Double Heterostructure ◽  
Low Threshold
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