Review of the state-of-the-art measurements for and the phenomenon of anomalously low thermal conductivities of dielectric thin films

1996 ◽  
Author(s):  
Joseph A. Carpenter, Jr.
Keyword(s):  
Thin Films ◽  
State Of The Art ◽  
The State ◽  
Dielectric Thin Films ◽  
Thermal Conductivities

Opportunities and challenges for electrochemistry in studying the electronic structure of nanocrystals

2019 ◽  
Vol 21 (18) ◽  
pp. 8992-9001 ◽  
Author(s):  
Michelle Weber ◽  
Sophia Westendorf ◽  
Björn Märker ◽  
Kai Braun ◽  
Marcus Scheele
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
State Of The Art ◽  
The State ◽  
Spectroscopic Methods

We review the state-of-the-art of determining the electronic structure of nanocrystals in thin films by electrochemistry and emphasize the benefits of correlating electrochemical with spectroscopic methods to this end.

The Analysis of Depth-Sensing Indentation Data: Review of the Special Discussion Session

1993 ◽  
Vol 308 ◽  
Author(s):  
Shefford P. Baker ◽  
T.P. Weihs
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
State Of The Art ◽  
The State ◽  
Discussion Session ◽  
Depth Sensing ◽  
Recent Advances

In light of recent advances in the analysis of depth-sensing indentation data and of the importance of this technique in the study of the mechanical properties of thin films, a special discussion session was held in order to explore the state of the art and to provide an informal forum for discussion. This is a brief review of that discussion. The discussion was focused by the four main sources of deviation from model behavior described in the previous paper.

Critical evaluation of the state of the art of the analysis of light elements in thin films demonstrated using the examples of SiOXNY and AlOXNY films (IUPAC Technical Report)

2004 ◽  
Vol 76 (6) ◽  
pp. 1161-1213 ◽  
Author(s):  
Sabine Dreer ◽  
P. Wilhartitz
Keyword(s):  
Thin Films ◽  
State Of The Art ◽  
Relevant Literature ◽  
Critical Evaluation ◽  
Analytical Techniques ◽  
The State ◽  
Model Systems ◽  
Light Elements ◽  
Comprehensive Overview ◽  
Technical Report

The quantitative analysis of thin films containing light elements is very important in improving the coating processes and technological properties of the products. In order to review the state of the art of modern analytical techniques for such applications, the model systems SiOXNY and AlOXNY were selected. Over 1000 abstracts were screened, and the relevant literature was evaluated to give a comprehensive overview of instruments, analytical procedures and results, film types, deposition methods, and investigation goals. From more than 150 citations, the limitations, drawbacks, and pitfalls of the different methods were extracted and reviewed critically, while in addition, improvements were proposed where possible. These suggestions are combined with the newest results of investigation by the authors of this paper. Recommendations concerning the optimized combination of analytical methods for different analytical problems have been worked out on the basis of all results. Analysis of various multicomponent systems containing light elements demonstrated the applicability of the different methods of analysis in combination to all film systems with related compositions.

Sol-gel processing of PZT thin films: A review of the state-of-the-art and process optimization strategies

1995 ◽  
Vol 7 (1-4) ◽  
pp. 259-277 ◽  
Author(s):  
Robert W. Schwartz ◽  
Timothy J. Boyle ◽  
Steven J. Lockwood ◽  
Michael B. Sinclair ◽  
Duane Dimos ◽  
...  
Keyword(s):  
Thin Films ◽  
Process Optimization ◽  
State Of The Art ◽  
Sol Gel ◽  
The State ◽  
Pzt Thin Films ◽  
Gel Processing

New Technique for Testing Performance of Thermoelectric Quantum Well Materials

2009 ◽  
Author(s):  
Velimir Jovanovic ◽  
Saeid Ghamaty ◽  
Norbert B. Elsner ◽  
Daniel Krommenhoek ◽  
John Morris
Keyword(s):  
Thin Films ◽  
Quantum Well ◽  
Temperature Difference ◽  
Power Factor ◽  
State Of The Art ◽  
The State ◽  
Maximum Efficiency ◽  
Test Apparatus ◽  
Si Substrate ◽  
Test Technique

A new test technique and apparatus have been developed for measuring the thermoelectric (TE) performance of the quantum well (QW) thin films. Innovative, nanotechnology Si/SiGe QW TE thin film materials have been developed that appear to demonstrate significantly higher Seebeck coefficients and lower electrical resistivities that show the power factor, Seebeck coefficient squared divided by resistivity, to be many times higher than for the state-of-the-art TE materials such as Bi2Te3, PbTe, TAGS or SiGe bulk materials. The power factor values were derived from QW films deposited on very electrically resistive Si substrates. Since the electrical resistance of the Si substrate is so high (> 100 times the QW film sample resistance) it acts like an insulator and the Seebeck and resistivity values that are measured are essentially those of the QW films. The measurement of thermal conductivity of QW films to obtain efficiency and the Figure of Merit, ZT, is much more difficult to measure and spurred this new experimental approach. This test was designed to determine if the QW materials are significantly better in ZT and efficiency than state-of-the-art TE materials such as Bi2Te3. As with the Seebeck and resistivity measurements, the presence of the Si substrate complicates the performance analysis. This test setup was designed to minimize the influence of the substrate. The technique developed allows the N or P sample to be measured as a thermoelectric couple with a copper wire as the other leg. During the test, the electrical output of the test sample and the imposed temperature difference are recorded simultaneously. The measured temperature difference, along with measured electrical properties at the steady-state conditions, is used to calculate the conversion efficiency by two different methods. Three separate QW samples were tested in the new test apparatus. A bulk Bi2Te3 sample was also tested to compare the QW performance with a state-of-the-art bulk TE material. From the experimental data, it was found that the QW samples exhibited conversion efficiencies which were approximately three times higher than the efficiency of the bulk Bi2Te3 material. Also, the experimentally measured properties of the Bi2Te3 sample were in good agreement with the published properties of the material, thus providing additional confirmation of this new test technique. Another confirmation of a higher ZT is that maximum efficiency and maximum power peaks exist at considerably different loads, whereas these peaks both occur near matched loads for Bi2Te3 alloys. The new test apparatus has been used effectively to measure the power factor of the QW thin films deposited on silicon substrates, and this power factor is significantly higher than for the state-of-the-art bulk TE materials.

Practical Picture Processing

1974 ◽  
Vol 32 ◽  
pp. 338-339
Author(s):  
T. A. Welton
Keyword(s):  
Radiation Damage ◽  
Coherence Length ◽  
Spatial Information ◽  
State Of The Art ◽  
Coherent Radiation ◽  
The State ◽  
Energy Spread ◽  
Electron Micrograph ◽  
Picture Processing ◽  
Molecular Skeleton

Various authors have emphasized the spatial information resident in an electron micrograph taken with adequately coherent radiation. In view of the completion of at least one such instrument, this opportunity is taken to summarize the state of the art of processing such micrographs. We use the usual symbols for the aberration coefficients, and supplement these with £ and 6 for the transverse coherence length and the fractional energy spread respectively. He also assume a weak, biologically interesting sample, with principal interest lying in the molecular skeleton remaining after obvious hydrogen loss and other radiation damage has occurred.

Hypothesis-Evidence Coordination: The State of the Art

2003 ◽  
Vol 48 (6) ◽  
pp. 826-829 ◽  
Author(s):  
Eric Amsel
Keyword(s):  
State Of The Art ◽  
The State
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