Amorphous silicon x-ray image sensor

1996 ◽  
Author(s):  
Jean Chabbal ◽  
Christophe Chaussat ◽  
Thierry Ducourant ◽  
Lionel Fritsch ◽  
Jean Michailos ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Image Sensor ◽  
X Ray

Soft X-Ray Image Sensor Using Hydrogenated Amorphous Silicon

1985 ◽  
Vol 24 (Part 2, No. 2) ◽  
pp. L129-L130 ◽  
Author(s):  
Yoshinori Hatanaka ◽  
textscZeng Bai Chuang ◽  
Hidenori Mimura
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Image Sensor ◽  
X Ray ◽  
Hydrogenated Amorphous

Amorphous silicon image sensor for x-ray applications

1995 ◽  
Author(s):  
Thorsten Graeve ◽  
Wingo Huang ◽  
Stephen M. Alexander ◽  
Youming Li
Keyword(s):  
Amorphous Silicon ◽  
Image Sensor ◽  
X Ray

Amorphous Silicon Photodiode-Thin Film Transistor Image Sensor with Diode on Top Structure

1997 ◽  
Vol 467 ◽  
Author(s):  
M J Powell ◽  
C Glasse ◽  
I D French ◽  
A R Franklin ◽  
J R Hughes ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistor ◽  
Image Sensor ◽  
Sensor Technology ◽  
Noise Performance ◽  
Silicon Thin Film ◽  
Silicon Photodiode ◽  
Insulating Layer ◽  
X Ray

ABSTRACTWe have developed a new amorphous silicon image sensor technology using a matrix array of amorphous silicon thin film transistors and photodiodes, where the amorphous silicon nip photodiode is fabricated on top of a thick insulating layer, on top of the thin film transistor array. We call this ‘diode on top’ technology or DOTTY. The active diode area can be as high as 93%, compared to 50% for our conventional photodiode-TFT technology. This leads to a higher signal to noise performance, which is important for medical X-ray applications.

Improved page-size 127-um-pixel amorphous-silicon image sensor for x-ray diagnostic medical imaging applications

1997 ◽  
Author(s):  
Richard L. Weisfield ◽  
Robert A. Street ◽  
Raj B. Apte ◽  
Andrew M. Moore
Keyword(s):  
Medical Imaging ◽  
Amorphous Silicon ◽  
Image Sensor ◽  
X Ray ◽  
Page Size

New amorphous-silicon image sensor for x-ray diagnostic medical imaging applications

1998 ◽  
Author(s):  
Richard L. Weisfield ◽  
Mark A. Hartney ◽  
Robert A. Street ◽  
Raj B. Apte
Keyword(s):  
Medical Imaging ◽  
Amorphous Silicon ◽  
Image Sensor ◽  
X Ray

High-performance amorphous silicon image sensor for x-ray diagnostic medical imaging applications

1999 ◽  
Author(s):  
Richard L. Weisfield ◽  
Mark A. Hartney ◽  
Roger Schneider ◽  
Koorosh Aflatooni ◽  
Rene Lujan
Keyword(s):  
Medical Imaging ◽  
Amorphous Silicon ◽  
High Performance ◽  
Image Sensor ◽  
X Ray

Amorphous Silicon Sensor Arrays for X-Ray and Document Imaging

1997 ◽  
Vol 487 ◽  
Author(s):  
R. A. Street ◽  
R. B. Apte ◽  
S. E. Ready ◽  
R. L. Weisfield ◽  
P. Nylen
Keyword(s):  
High Resolution ◽  
Medical Imaging ◽  
Amorphous Silicon ◽  
Present State ◽  
Sensor Arrays ◽  
Image Sensor ◽  
Large Area ◽  
Flat Panel ◽  
X Ray ◽  
Silicon Sensor

AbstractLarge area amorphous silicon image sensor arrays are important for x-ray medical imaging and document scanning as well as a variety of other applications where large sensor size is required. The paper first summarizes the present state of the flat panel x-ray imager technology, and compares the two main approaches for x-ray detection. We then describe the performance of a new, large area, high resolution, radiographic imager based on a single amorphous silicon array with 2304×3200 pixels, and an active area of 30×40 cm (12×1 6”).

Development of a Pixel of Area Image Sensor in X-ray Detector

2018 ◽  
Vol 23 (6) ◽  
pp. 573-585
Author(s):  
D.A. Suponnikov ◽  
◽  
A.N. Putilin ◽  
E.A. Tatarinova ◽  
Z.G. Zhgunev ◽  
...  
Keyword(s):  
Image Sensor ◽  
X Ray

Hydrogenated Nanocrystalline Silicon Thin Film Transistor Array for X-ray Detector Application

2008 ◽  
Vol 1066 ◽  
Author(s):  
Kyung-Wook Shin ◽  
Mohammad R. Esmaeili-Rad ◽  
Andrei Sazonov ◽  
Arokia Nathan
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Hydrogenated Amorphous Silicon ◽  
Nanocrystalline Silicon ◽  
Amorphous Selenium ◽  
Breakdown Field ◽  
Storage Capacitor ◽  
X Ray ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated nanocrystalline silicon (nc-Si:H) has strong potential to replace the hydrogenated amorphous silicon (a-Si:H) in thin film transistors (TFTs) due to its compatibility with the current industrial a-Si:H processes, and its better threshold voltage stability [1]. In this paper, we present an experimental TFT array backplane for direct conversion X-ray detector, using inverted staggered bottom gate nc-Si:H TFT as switching element. The TFTs employed a nc-Si:H/a-Si:H bilayer as the channel layer and hydrogenated amorphous silicon nitride (a-SiNx) as the gate dielectric; both layers deposited by plasma enhanced chemical vapor deposition (PECVD) at 280°C. Each pixel consists of a switching TFT, a charge storage capacitor (Cpx), and a mushroom electrode which serves as the bottom contact for X-ray detector such as amorphous selenium photoconductor. The chemical composition of the a-SiNx was studied by Fourier transform infrared spectroscopy. Current-voltage measurements of the a-SiNx film demonstrate that a breakdown field of 4.3 MV/cm.. TFTs in the array exhibits a field effect mobility (μEF) of 0.15 cm2/V·s, a threshold voltage (VTh) of 5.71 V, and a subthreshold leakage current (Isub) of 10−10 A. The fabrication sequence and TFT characteristics will be discussed in details.

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