Calculation of the threshold characteristics of the mid-infrared laser based on type-II heterostructure with QWs

1996 ◽  
Author(s):  
Georgy G. Zegrya ◽  
Aleksey D. Andreev
Keyword(s):  
Type Ii ◽  
1997 ◽  
Vol 484 ◽  
Author(s):  
M. J. Yang ◽  
W. J. Moore ◽  
B. R. Bennett ◽  
B. V. Shanabrook ◽  
J. O. Cross

AbstractThe MBE growth temperature for InAs/InGaSb/InAs/AlSb mid-infrared lasers has been studied. It is found that the best growth temperature is between 370°C and 420°C. A growth temperature above this range will result in excessive interlayer mixing, which degrades the radiative efficiency.


2012 ◽  
Author(s):  
Baile Chen ◽  
A. L. Holmes ◽  
Viktor Khalfin ◽  
Igor Kudryashov ◽  
Bora M. Onat

2018 ◽  
Vol 43 (3) ◽  
pp. 411 ◽  
Author(s):  
Shenyu Dai ◽  
Guoying Feng ◽  
Hong Zhang ◽  
Shougui Ning ◽  
Yao Xiao ◽  
...  
Keyword(s):  

Author(s):  
Ti Chuang ◽  
Ralph Burnham ◽  
R. B. Jones

2009 ◽  
Vol 38 (9) ◽  
pp. 1952-1955 ◽  
Author(s):  
D. Li ◽  
S. Mukherjee ◽  
J. Ma ◽  
G. Bi ◽  
D. Ray ◽  
...  

2008 ◽  
Vol 310 (7-9) ◽  
pp. 2015-2019 ◽  
Author(s):  
P. Amedzake ◽  
E. Brown ◽  
U. Hömmerich ◽  
S.B. Trivedi ◽  
J.M. Zavada

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