Absorption of light by a monolayer graphene-water complex

2018 ◽  
Author(s):  
Viktor Ivashko ◽  
Oleg Angelsky ◽  
Petro Maksimyak ◽  
Andrii Maksimyak ◽  
Viktor Brus
Keyword(s):  
Monolayer Graphene ◽  
Water Complex ◽  
Absorption Of Light

Anomalous light absorption by a monolayer graphene-water complex

2018 ◽  
Author(s):  
Viktor Ivashko ◽  
Oleg Angelsky ◽  
Petro Maksimyak ◽  
Viktor Brus ◽  
Andriy Maksimyak
Keyword(s):  
Light Absorption ◽  
Monolayer Graphene ◽  
Water Complex

Quantum simulation of the benzene-water complex

1996 ◽  
Vol 88 (1) ◽  
pp. 33-52 ◽  
Author(s):  
JONATHON GREGORY ◽  
DAVID CLARY
Keyword(s):  
Quantum Simulation ◽  
Water Complex

Absorption of light in antiferromagnetic dielectrics

1969 ◽  
Vol 98 (5) ◽  
pp. 27-70 ◽  
Author(s):  
V.V. Eremenko ◽  
A.I. Belyaeva
Keyword(s):  
Absorption Of Light

ROTATIONAL SPECTROSCOPY OF THE METHYL GLYCIDATE-WATER COMPLEX

2017 ◽  
Author(s):  
Yunjie Xu ◽  
Wolfgang Jäger ◽  
Zhibo Wang ◽  
Javix Thomas ◽  
Jason Gall
Keyword(s):  
Rotational Spectroscopy ◽  
Water Complex

scholarly journals Strong localization in suspended monolayer graphene by intervalley scattering

2021 ◽  
Vol 103 (8) ◽  
Author(s):  
Cenk Yanik ◽  
Vahid Sazgari ◽  
Abdulkadir Canatar ◽  
Yaser Vaheb ◽  
İsmet İ. Kaya
Keyword(s):  
Monolayer Graphene ◽  
Strong Localization ◽  
Intervalley Scattering

scholarly journals Critical View on Buffer Layer Formation and Monolayer Graphene Properties in High-Temperature Sublimation

2021 ◽  
Vol 11 (4) ◽  
pp. 1891
Author(s):  
Vallery Stanishev ◽  
Nerijus Armakavicius ◽  
Chamseddine Bouhafs ◽  
Camilla Coletti ◽  
Philipp Kühne ◽  
...  
Keyword(s):  
High Temperature ◽  
Charge Carrier ◽  
Buffer Layer ◽  
Free Charge Carrier ◽  
Monolayer Graphene ◽  
Free Charge ◽  
Layer Formation ◽  
Free Hole ◽  
Sublimation Growth ◽  
Insulating Substrates

In this work we have critically reviewed the processes in high-temperature sublimation growth of graphene in Ar atmosphere using closed graphite crucible. Special focus is put on buffer layer formation and free charge carrier properties of monolayer graphene and quasi-freestanding monolayer graphene on 4H–SiC. We show that by introducing Ar at higher temperatures, TAr, one can shift the formation of the buffer layer to higher temperatures for both n-type and semi-insulating substrates. A scenario explaining the observed suppressed formation of buffer layer at higher TAr is proposed and discussed. Increased TAr is also shown to reduce the sp3 hybridization content and defect densities in the buffer layer on n-type conductive substrates. Growth on semi-insulating substrates results in ordered buffer layer with significantly improved structural properties, for which TAr plays only a minor role. The free charge density and mobility parameters of monolayer graphene and quasi-freestanding monolayer graphene with different TAr and different environmental treatment conditions are determined by contactless terahertz optical Hall effect. An efficient annealing of donors on and near the SiC surface is suggested to take place for intrinsic monolayer graphene grown at 2000 ∘C, and which is found to be independent of TAr. Higher TAr leads to higher free charge carrier mobility parameters in both intrinsically n-type and ambient p-type doped monolayer graphene. TAr is also found to have a profound effect on the free hole parameters of quasi-freestanding monolayer graphene. These findings are discussed in view of interface and buffer layer properties in order to construct a comprehensive picture of high-temperature sublimation growth and provide guidance for growth parameters optimization depending on the targeted graphene application.

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