Computer generated optical elements for application in optical measuring devices

1993 ◽  
Author(s):  
Theo Tschudi
Keyword(s):  
Optical Elements ◽  
Measuring Devices ◽  
Optical Measuring

Computer Generated Optical Elements for Application in Optical Measuring Devices

1994 ◽  
pp. 268-270
Author(s):  
T. Tschudi ◽  
D. Columbus ◽  
M. Deininger ◽  
K. Gerstner ◽  
J. Hoßfeld ◽  
...  
Keyword(s):  
Optical Elements ◽  
Measuring Devices ◽  
Optical Measuring

Transparente Materialien optisch messen*/Measuring transparent materials by optical means - Consideration of influences of the materials under test

2015 ◽  
Vol 105 (11-12) ◽  
pp. 770-774
Author(s):  
H. Dierke ◽  
R. Tutsch
Keyword(s):  
Film Thickness ◽  
Strong Influence ◽  
Optical Methods ◽  
Measuring Devices ◽  
Optical Measuring ◽  
Transparent Materials

Das Messen der Schichtdicke transparenter Materialien mit optischen Methoden ist eine Herausforderung, da das Material des zu messenden Objekts einen erheblichen Einfluss auf das Messergebnis hat. Im Rahmen der Normenreihe DIN 32567 werden systematische Einflüsse und Abweichungen für optische und taktile Messgeräte beschrieben sowie für einige dieser Geräte Verfahren festgelegt, mit denen die Materialeinflüsse bestimmt und korrigiert werden können.   Measuring the film thickness of transparent materials with optical methods is a challenging task because the material of the measuring object has a strong influence on the measuring result. Within the scope of the series of standards DIN 32567, systematic influences and deviations for tactile and optical measuring devices are described. Additionally, for some of these devices procedures are determined to identify and correct the material influences.

Volume diffraction gratings for optical measuring devices

1993 ◽  
Author(s):  
Vitaly M. Belous ◽  
Vladimir E. Mandel ◽  
Andriy Y. Popov ◽  
Alexander V. Tjurin ◽  
V. Y. Gotsulsky ◽  
...  
Keyword(s):  
Diffraction Gratings ◽  
Measuring Devices ◽  
Optical Measuring

The use of drones, thermography, and other optical measuring devices

2019 ◽  
Author(s):  
Timo T. Kauppinen ◽  
Gedi Skog ◽  
Marko Hassinen ◽  
Marko Savolainen ◽  
Sami Siikanen ◽  
...  
Keyword(s):  
Measuring Devices ◽  
Optical Measuring

Model-independent light field reconstruction using a generic camera calibration

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
David Uhlig ◽  
Michael Heizmann
Keyword(s):  
Light Field ◽  
Imaging System ◽  
Complex Structure ◽  
Calibration Method ◽  
Sampled Data ◽  
Optical Elements ◽  
Field Representation ◽  
Measuring Devices ◽  
Irregularly Sampled Data ◽  
Interest In Research

Abstract Sophisticated and highly specialized optical measuring devices are becoming increasingly important for high-precision manufacturing and environment perception. In particular, light field cameras are experiencing an ever-increasing interest in research and industry as they enable a variety of new measurement methods. Unfortunately, due to their complex structure, their calibration is very difficult and usually precisely tailored to the particular type of light field camera. To overcome these difficulties, we present a method that decodes a light field from the raw data of any light field imaging system without knowing and modeling the internal optical elements. We calibrate the camera using a precise generic calibration method and transform the obtained ray set into an equivalent light field representation. Finally, we reconstruct a rectified light field from the irregularly sampled data and in addition we derive the geometric ray properties as intrinsic camera parameters. Experimental results validate the method by showing that both the information of the observed scene and the geometric structure of the light field are preserved by an adequate rectification and calibration.

Near-field scanning optical microscopy

1986 ◽  
Vol 44 ◽  
pp. 642-643
Author(s):  
E. Betzig ◽  
A. Harootunian ◽  
M. Isaacson ◽  
A. Lewis
Keyword(s):  
Near Field ◽  
Optical Microscope ◽  
Visible Radiation ◽  
Field Methods ◽  
Optical Elements ◽  
Optical Region ◽  
Order Of Magnitude ◽  
Nondestructive Imaging ◽  
Scanning Optical Microscopy ◽  
Near Field Scanning

In general, conventional methods of optical imaging are limited in spatial resolution by either the wavelength of the radiation used or by the aberrations of the optical elements. This is true whether one uses a scanning probe or a fixed beam method. The reason for the wavelength limit of resolution is due to the far field methods of producing or detecting the radiation. If one resorts to restricting our probes to the near field optical region, then the possibility exists of obtaining spatial resolutions more than an order of magnitude smaller than the optical wavelength of the radiation used. In this paper, we will describe the principles underlying such "near field" imaging and present some preliminary results from a near field scanning optical microscope (NS0M) that uses visible radiation and is capable of resolutions comparable to an SEM. The advantage of such a technique is the possibility of completely nondestructive imaging in air at spatial resolutions of about 50nm.

Characterization of Rh/Si multilayer structure by HREM and HAADF

1992 ◽  
Vol 50 (1) ◽  
pp. 122-123
Author(s):  
Y. Cheng ◽  
J. Liu ◽  
M.B. Stearns ◽  
D.G. Steams
Keyword(s):  
Normal Incidence ◽  
High Resolution Electron Microscopy ◽  
X Rays ◽  
Beam Direction ◽  
Cross Sectional ◽  
Optical Elements ◽  
Resolution Electron ◽  
Point To Point ◽  
Better Than

The Rh/Si multilayer (ML) thin films are promising optical elements for soft x-rays since they have a calculated normal incidence reflectivity of ∼60% at a x-ray wavelength of ∼13 nm. However, a reflectivity of only 28% has been attained to date for ML fabricated by dc magnetron sputtering. In order to determine the cause of this degraded reflectivity the microstructure of this ML was examined on cross-sectional specimens with two high-resolution electron microscopy (HREM and HAADF) techniques.Cross-sectional specimens were made from an as-prepared ML sample and from the same ML annealed at 298 °C for 1 and 100 hours. The specimens were imaged using a JEM-4000EX TEM operating at 400 kV with a point-to-point resolution of better than 0.17 nm. The specimens were viewed along Si [110] projection of the substrate, with the (001) Si surface plane parallel to the beam direction.

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