UV laser photo-induced refractive index changes in poly-methyl-meth-acrylate and plastic optical fibres for application as sensors and devices

2000 ◽  
Author(s):  
P. J. Scully
Keyword(s):  
Refractive Index ◽  
Optical Fibres ◽  
Uv Laser ◽  
Index Changes

New Hierarchically Structured Optical Materials for Dynamic Refractive Index Changes

2003 ◽  
Author(s):  
Bradley F. Chmelka ◽  
Earl Danielson ◽  
Michael D. Wyrsta
Keyword(s):  
Refractive Index ◽  
Optical Materials ◽  
Index Changes

LINEAR AND NONLINEAR INTERSUBBAND OPTICAL ABSORPTION OF FINITE AND INFINITE SEMI-PARABOLIC QUANTUM WELLS

2011 ◽  
Vol 25 (07) ◽  
pp. 497-507 ◽  
Author(s):  
M. J. KARIMI ◽  
A. KESHAVARZ ◽  
A. POOSTFORUSH
Keyword(s):  
Refractive Index ◽  
Optical Properties ◽  
Optical Absorption ◽  
Quantum Well ◽  
Quantum Wells ◽  
Resonant Peak ◽  
Energy Eigenvalues ◽  
Finite Case ◽  
Infinite Case ◽  
Index Changes

In this work, the optical absorption coefficients and the refractive index changes for the infinite and finite semi-parabolic quantum well are calculated. Numerical calculations are performed for typical GaAs / Al x Ga 1-x As semi-parabolic quantum well. The energy eigenvalues and eigenfunctions of these systems are calculated numerically. Optical properties are obtained using the compact density matrix approach. Results show that the energy eigenvalues and the matrix elements of the infinite and finite cases are different. The calculations reveal that the resonant peaks of the optical properties of the finite case occur at lower values of the incident photon energy with respect to the infinite case. Results indicate that the maximum value of the refractive index changes for the finite case are greater than that of the infinite case. Our calculations also show that in contrast to the infinite case, the resonant peak value of the total absorption coefficient in the case of the finite well is a non-monotonic function of the semi-parabolic confinement frequency.

Optimal refractive index changes for cross-gain and cross-phase modulation

1998 ◽  
Author(s):  
Thomas Keating ◽  
Jeffrey R. Minch ◽  
Seoung-Hwan Park ◽  
Shun-Lien Chuang ◽  
Tawee Tanbun-Ek
Keyword(s):  
Refractive Index ◽  
Phase Modulation ◽  
Cross Phase Modulation ◽  
Index Changes

Refractive index changes of ion-implanted quartz

1983 ◽  
Vol 76 (2) ◽  
pp. K171-K174 ◽  
Author(s):  
H. Beez ◽  
D. Fasold ◽  
H. Karge
Keyword(s):  
Refractive Index ◽  
Index Changes ◽  
Ion Implanted

Modelling optical fibres with arbitrary refractive-index profiles

1979 ◽  
Vol 11 (6) ◽  
pp. 507-516 ◽  
Author(s):  
A. E. Karbowiak ◽  
D. H. Irving
Keyword(s):  
Refractive Index ◽  
Optical Fibres

Pulsed 157 nm VUV induced refractive index modification of optical fibres and planar fused silica

2002 ◽  
Vol 186 (1-4) ◽  
pp. 583-587 ◽  
Author(s):  
P.E. Dyer ◽  
A.-M. Johnson ◽  
H.V. Snelling ◽  
C.D. Walton
Keyword(s):  
Refractive Index ◽  
Fused Silica ◽  
Optical Fibres

Polysilane-Based Thin Films with High Photosensitivity

2002 ◽  
Vol 726 ◽  
Author(s):  
K. Simmons-Potter ◽  
G. M. Jamison ◽  
B. G. Potter ◽  
W. J. Thomes ◽  
C. C. Phifer
Keyword(s):  
Refractive Index ◽  
Laser Exposure ◽  
Alkyl Aryl ◽  
Index Changes ◽  
Krf Excimer Laser ◽  
Intrinsic Photosensitivity ◽  
Optical Behavior ◽  
High Photosensitivity ◽  
Film Form ◽  
Limited Testing

AbstractThe present work investigates the intrinsic photosensitivity of a family of poly(alkyl)(aryl)silanes and poly(hydridophenyl)silane for use in the development of photoimprinted waveguide devices. Limited testing of passive optical behavior (e.g. absorption, refractive index) and photosensitive response was performed for these materials in thin film form. It was determined that the materials exhibited dramatic photobleaching under 248 nm (KrF excimer laser) exposure. Based on a Kramers-Kronig analysis of the absorption changes, refractive index changes on the order of - 0.1 are estimated. Confirmation of this calculation has been provided via ellipsometry which estimates refractive index changes at 632 nm of -0.14 ± 0.01. In addition, embedded strips have been photoimprinted into the material to confirm waveguiding capacity of the films. Possible sources of photosensitivity in this material and its potential for application in various device configurations will be discussed.

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