III-nitride based N-polar current aperture vertical electron transistors (Conference Presentation)

2017 ◽  
Author(s):  
Saba Rajabi ◽  
Saptarshi Mandal ◽  
Haoran Li ◽  
Matthew A. Laurent ◽  
Stacia Keller ◽  
...  
Keyword(s):  
Electron Transistors

One-electron transistors based on Coulomb blockade and quantum interference

1999 ◽  
Vol 169 (4) ◽  
pp. 471 ◽  
Author(s):  
Z.D. Kvon ◽  
L.V. Litvin ◽  
V.A. Tkachenko ◽  
A.L. Aseev
Keyword(s):  
Coulomb Blockade ◽  
Quantum Interference ◽  
Electron Transistors

scholarly journals Simultaneous arrayed formation of single-electron transistors using electromigration in series-connected nanogaps

AIP Advances ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 105005
Author(s):  
Mitsuki Ito ◽  
Mamiko Yagi ◽  
Moe Shimada ◽  
Jun-ichi Shirakashi
Keyword(s):  
Single Electron ◽  
Single Electron Transistors ◽  
In Series ◽  
Electron Transistors

Novel Electronics Enabled by Rare Earth Arsenides Buried in III-V Semiconductors

1993 ◽  
Vol 301 ◽  
Author(s):  
S. James Allen ◽  
Dan Brehmer ◽  
C.J. PalmstrØm
Keyword(s):  
Rare Earth ◽  
Epitaxial Layers ◽  
Hot Electron ◽  
Surface Geometry ◽  
Electron Effective Mass ◽  
Metal Base ◽  
Lattice Match ◽  
Linear Material ◽  
Shubnikov De Haas Oscillations ◽  
Electron Transistors

ABSTRACTHeterostructures consisting of III-V semiconductors and epitaxial layers of the rare earth monoarsenides can be grown by molecular beam epitaxy. By alloying ErAs with ScAs, lattice match can be achieved with (Al,Ga)As. Using magneto-transport measurements, we show that these layers are semi-metallic with equal electron and hole concentrations, 3.0 ×1020 cm−3. Shubnikov-de Haas oscillations are used to confirm the predicted Fermi surface geometry and measure the electron effective mass and the coupling to the 4f spin on the Er3+ ion. Remarkably, the material shows no transition from semimetal to semiconductor as the film thickness is reduced to three monolayers. Below three monolayers the films are not uniform and are believed to consist of islands three monolayers high.This system provides a unique opportunity to explore novel electronics based on controlled transport through semimetal/semiconductor heterostructures. Lateral transport through semimetal islands immersed in a δ-doped layer may provide a fast non-linear material for THz electronics. Vertical transport through thin epitaxial layers may enable resonant tunneling hot electron transistors with a semi-metal base. Preliminary experiments on transistor like test structures measure some transfer through a 10 monolayer thick semimetal base. They also identify overgrowth of the III-V semiconductor on the semimetal layer as the key materials issue.

scholarly journals Material considerations for the design of 2D/3D hot electron transistors

APL Materials ◽  
2021 ◽  
Vol 9 (8) ◽  
pp. 081103
Author(s):  
Furkan Turker ◽  
Siavash Rajabpour ◽  
Joshua A. Robinson
Keyword(s):  
Hot Electron ◽  
Electron Transistors

Single-Electron Transistors with Sidewall Depletion Gates on a Silicon-On-Insulator Nano-Wire

2002 ◽  
Vol 41 (Part 1, No. 4B) ◽  
pp. 2574-2577 ◽  
Author(s):  
Kyung Rok Kim ◽  
Dae Hwan Kim ◽  
Suk-Kang Sung ◽  
Jong Duk Lee ◽  
Byung-Gook Park ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

scholarly journals In situ electrical characterization of palladium-based single electron transistors made by electromigration technique

AIP Advances ◽  
2014 ◽  
Vol 4 (11) ◽  
pp. 117126 ◽  
Author(s):  
L. Arzubiaga ◽  
F. Golmar ◽  
R. Llopis ◽  
F. Casanova ◽  
L. E. Hueso
Keyword(s):  
Electrical Characterization ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors
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