Radiation-hardened optical amplifier based on multicore fiber for telecommunication satellites

Author(s):  
Marta Filipowicz ◽  
Marek Napierala ◽  
Michal Murawski ◽  
Lukasz Ostrowski ◽  
Pawel Mergo ◽  
...  
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.


2016 ◽  
Vol 18 (1) ◽  
pp. 76-86
Author(s):  
N.N. Prokopenko ◽  
N.V. Butyrlagin ◽  
A.V. Bugakova ◽  
A.A. Ignashin

2006 ◽  
Vol 16 (2) ◽  
pp. 1-14
Author(s):  
Moawad I. Moawad ◽  
Mahmoud M. A. Eid ◽  
Abd El-Naser A. Mohammed ◽  
Mahmoud M.A. Abd El-Whab

2020 ◽  
Vol 10 (4) ◽  
pp. 369-380
Author(s):  
K. Maji ◽  
K. Mukherjee ◽  
A. Raja

All optical tri-state frequency encoded logic gates NOT and NAND are proposed and numerically investigated using TOAD based interferometric switch for the first time to the best of our knowledge. The optical power spectrum, extinction ratio, contrast ration, and amplified spontaneous noise are calculated to analyze and confirm practical feasibility of the gates. The proposed device works for low switching energy and has high contrast and extinction ratio as indicated in this work.


2020 ◽  
Vol 96 (3s) ◽  
pp. 169-174
Author(s):  
Ю.М. Герасимов ◽  
Н.Г. Григорьев ◽  
А.В. Кобыляцкий ◽  
Я.Я. Петричкович

Рассматриваются архитектурные, схемотехнические и конструктивно-топологические особенности асинхронного радиационно стойкого ОЗУ 1657РУ2У емкостью 16 Мбит с организацией (1Мx16)/(2Mx8), изготавливаемого по коммерческой КМОП-технологии объемного кремния уровня 130 нм. СБИС ОЗУ нечувствительна к эффекту «защелкивания», имеет повышенные дозовую стойкость и сбоеустойчивость при воздействии отдельных ядерных частиц (ОЯЧ), протонов и нейтронов (ТЧ). The paper highlights architectural, schematic and topological features of the radiation hardened 16 Mbit CMOS SRAM with configurable organization 1Mx16/2Mx8, which is immune to latch-up and with improved total dose and heavy particles tolerance.


1988 ◽  
Vol 24 (8) ◽  
pp. 475 ◽  
Author(s):  
Y.K. Park ◽  
S.W. Granlund ◽  
L.D. Tzeng ◽  
N.A. Olsson ◽  
N.K. Dutta

1994 ◽  
Vol 30 (1) ◽  
pp. 42-43 ◽  
Author(s):  
V.A. Kozlov ◽  
A.S. Svakhin ◽  
V.V. Ter-Mikirtychev

1999 ◽  
Vol 35 (2) ◽  
pp. 159 ◽  
Author(s):  
R.A. Griffin ◽  
P.M. Lane ◽  
J.J. O'Reilly

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