Emission control of multilayered thin films of ZnO/CuO prepared by pulsed laser deposition (Conference Presentation)

Author(s):  
Hong-Kun Lyu ◽  
Bunyod Allabergenov ◽  
Hyunseok Shim ◽  
Myoung-Jae Lee ◽  
Byeongdae Choi
2000 ◽  
Author(s):  
Veronica Marotta ◽  
Stefano Orlando ◽  
Giovanni P. Parisi ◽  
Anna Giardini-Guidoni

1998 ◽  
Vol 72 (11) ◽  
pp. 1394-1396 ◽  
Author(s):  
B. D. Qu ◽  
M. Evstigneev ◽  
D. J. Johnson ◽  
R. H. Prince

2003 ◽  
Vol 57 (18) ◽  
pp. 2693-2697 ◽  
Author(s):  
Y. Yang ◽  
G.L. Yuan ◽  
L. Zhou ◽  
J.-M. Liu ◽  
Z.G. Liu

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-65-Pr11-69
Author(s):  
N. Lemée ◽  
H. Bouyanfif ◽  
J. L. Dellis ◽  
M. El Marssi ◽  
M. G. Karkut ◽  
...  

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-133-Pr11-137
Author(s):  
J. R. Duclère ◽  
M. Guilloux-Viry ◽  
A. Perrin ◽  
A. Dauscher ◽  
S. Weber ◽  
...  

2002 ◽  
Vol 720 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
Daniel M. Potrepka ◽  
Steven C. Tidrow

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.


2021 ◽  
Vol 127 ◽  
pp. 105716
Author(s):  
Tianzhen Guo ◽  
Dan Wang ◽  
Yajun Yang ◽  
Xiaoyong Xiong ◽  
Kelin Li ◽  
...  

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