Progress on the fabrication of lightweight single-crystal silicon x-ray mirrors

Author(s):  
Raul E. Riveros ◽  
Michael P. Biskach ◽  
Kim D. Allgood ◽  
John D. Kearney ◽  
William W. Zhang ◽  
...  
1981 ◽  
Vol 25 ◽  
pp. 365-371
Author(s):  
Glen A. Stone

This paper presents a new method to measure the thickness of very thin films on a substrate material using energy dispersive x-ray diffractometry. The method can be used for many film-substrate combinations. The specific application to be presented is the measurement of phosphosilicate glass films on single crystal silicon wafers.


2020 ◽  
Vol 65 (6) ◽  
pp. 827-831
Author(s):  
M. S. Folomeshkin ◽  
A. S. Boikova ◽  
Yu. A. Volkovsky ◽  
M. A. Marchenkova ◽  
P. A. Prosekov ◽  
...  

2014 ◽  
Author(s):  
Raul E. Riveros ◽  
Vincent T. Bly ◽  
Linette D. Kolos ◽  
Kevin P. McKeon ◽  
James R. Mazzarella ◽  
...  

1994 ◽  
Vol 2 (5) ◽  
pp. 8-8
Author(s):  
Mark W. Lund

A combination of electron microscope and x-ray spectrometer is a very powerful tool. Not only can one see a sample in great detail, but one can determine, and even map, the chemical elements. In Part 1, I discussed some of the basics of energy dispersive x-ray spectroscopy (EDS or EDX). The heart of the spectrometer is a small piece of single crystal silicon about the size and shape of a shirt button, and about twice as thick. It has been selected for high purity, and then lithium drifted to compensate the remaining impurities.The lithium is carefully drifted into the crystal button in order to exactly compensate the impurities in the crystal that would create leakage current. This is done at about 60° C under an electric field. It is then evaluated and re-drifted for a final clean up of any uncompensated impurity atoms that remain.


2019 ◽  
Vol 5 (1) ◽  
pp. 13-19
Author(s):  
Victor E. Asadchikov ◽  
Irina G. Dyachkova ◽  
Denis A. Zolotov ◽  
Yuri S. Krivonosov ◽  
Vladimir T. Bublik ◽  
...  

The quality and structural perfection of single crystal silicon have been studied using double-crystal X-ray diffraction after hydrogen ion implantation and thermal annealing used in a number of semiconductor technologies. The fundamental difference of this approach is the possibility to rapidly obtain reliable experimental results which were confirmed using X-ray topography. Data have been presented for the condition of the damaged layer in n-type silicon single crystals (r = 100 W × cm) having the (111) orientation and a thickness of 2 mm after proton implantation at energies E = 200, 300 and 100 + 200 + 300 keV and dose D = 2 × 1016 cm-2 and subsequent heat treatment in the T = 100–900 °C range. Using the method of integral characteristics we have revealed a nonmonotonic dependence of the integral characteristics of the damaged layer, i.e., the mean effective thickness Leff and the mean relative deformation Da/a, on the annealing temperature, the maximum deformation being observed for ~300 °C. The results have allowed us to make a general assessment of the damaged layer condition after heat treatment.


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