Monte Carlo simulation of skin image using a skin model with surface texture

2017 ◽  
Author(s):  
Kota Mizunuma ◽  
Yuto Hanabusa ◽  
Takaaki Maeda ◽  
Hideki Funamizu ◽  
Tomonori Yuasa ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Surface Texture ◽  
Skin Model

315 Color Appearance of Blood in Skin Tissue : Monte Carlo Simulation for Skin Model

2001 ◽  
Vol 2001.41 (0) ◽  
pp. 102-103
Author(s):  
Yuya MASUKAWA ◽  
Izumi NISHIDATE ◽  
Yoshihisa AIZU ◽  
Hiromichi MISHINA ◽  
Tomonori YUASA
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Color Appearance ◽  
Skin Tissue ◽  
Skin Model

EFFECT OF MULTI-DESIGN SKIN MODEL AND CHARACTERISTIC ON MONTE CARLO SIMULATION OF LIGHT-SKIN DIFFUSE REFLECTANCE SPECTRA

2016 ◽  
Vol 78 (9) ◽  
Author(s):  
Muhammad Nur Salihin Yusoff ◽  
Mohamad Suhaimi Jaafar
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Diffuse Reflectance ◽  
Reflectance Spectra ◽  
Processing Unit ◽  
Monte Carlo Code ◽  
Skin Model ◽  
Diffuse Reflectance Spectra ◽  
Light Skin ◽  
The Impact

This study was carried out to analyze the impact of four skin models and three skin characteristics on Monte Carlo simulation of light-skin diffuse reflectance spectra. The simulation was performed using graphic processing unit (GPU)-based Monte Carlo code (CUDAMCML). The computation platform was a laptop with 2.3 GHz processor (Intel Core i5-2410M) and supported by NVIDIA’s Compute Unified Device Architecture (CUDA) graphic card (GeForce GT 520M). This analysis showed the importance of taking into account the depth distribution of melanin in designing a multi-layered skin model. Addition of complexity to the model caused only less than two minutes increment of computation time. Increase of melanin concentration reduced the values of diffuse reflectance over the spectrum while the profile of ‘W’ curve became less-defined. Increase of blood concentration also decreased the values of diffuse reflectance (particularly at wavelengths < 600 nm) but the profile of ‘W’ curve became more-defined. Increase of epidermal and dermal thicknesses influenced the diffuse reflectance spectra but not for subcutaneous fat thickness.  

Electron Scattering in Solids

1990 ◽  
Vol 48 (2) ◽  
pp. 4-5
Author(s):  
Ryuichi Shimizu ◽  
Ze-Jun Ding
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Angular Distribution ◽  
Elastic Scattering ◽  
Electron Scattering ◽  
Cross Sections ◽  
Expansion Method ◽  
Electron Excitation ◽  
Partial Wave Expansion ◽  
Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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