Fabrication of GaN quantum dots by MOCVD for intersubband transitions infrared detectors

2017 ◽  
Author(s):  
Zhiqiang Qi ◽  
Rui Yang ◽  
Cheng Zeng ◽  
Wenliang Hu ◽  
Zhijie Zhang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Infrared Detectors ◽  
Intersubband Transitions

scholarly journals Temperature Dependence of Quantum Dots-In-Well Infrared Photo Detectors (QDIPs) using Photoluminescence

2019 ◽  
Vol 8 (2S2) ◽  
pp. 254-259
Keyword(s):  
Quantum Dots ◽  
Fourier Transform ◽  
Infrared Spectroscopy ◽  
Dark Current ◽  
Infrared Detectors ◽  
Normal Incidence ◽  
Infrared Detection ◽  
Intersubband Transitions ◽  
Inas Quantum Dots ◽  
Photo Detectors

A research of quantity dots-in-well infrared photo detectors (QDIPs) produces helpful outcomes for creating a twocolor QDIP. Quantum dot infrared photo detectors (QDIPs) have been shown to be a main technology in mid-and longwavelength infrared detection owing to their capacity for normal incidence operation and low dark current. This research explores infrared detectors based on intersubband transitions in a novel heterostructure of InAs / In0.15 Ga0.85 As / GaAs quantum dotsin-well (DWELL). The InAs quantum dots are also positioned in an In0.15 Ga0.85 in the DWELL framework, which in turn is well positioned with the In0.1Ga0.9As obstacle in GaAs quantum. Using fourier transform infrared spectroscopy, the optical characteristics of the sample were researched using photoluminescence and photocurrent. Spectrally adjustable reaction was noted at 6.2μm and 7.5μm with prejudice and lengthy wave IR reaction

Intersubband Transitions in In0.3 Ga0.7As/GaAs Multiple Quantum Dots of Varying Dot-Sizes

2004 ◽  
Vol 829 ◽  
Author(s):  
Y. C. Chua ◽  
Jie Liang ◽  
B. S. Passmore ◽  
E. A. DeCuir ◽  
M. O. Manasreh ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Infrared Detectors ◽  
Molecular Beam ◽  
Experimental Measurements ◽  
Multiple Quantum ◽  
Optical Absorption Spectra ◽  
Intersubband Transition ◽  
Intersubband Transitions ◽  
Theoretical Line ◽  
Transition Absorption

ABSTRACTThe optical absorption spectra of intersubband transitions in In0.3Ga0.7As/GaAs multiple quantum dots (MQDs) grown by molecular beam epitaxy were investigated. By varying the number of In0.3Ga0.7As monolayers deposited, a series of samples with varying dot sizes ranging from 10 – 50 monolayers were obtained. The quantum dots grown with size less than 15 monolayers or more than 50 monolayers did not yield any observable measurements of intersubband transition. This suggests that there exist a critical upper and lower limit of In0.3Ga0.7As quantum dots for infrared detectors. A wavelength range of 8.60 – 13.70 μm is achieved for structures grown with the above monolayers range. The theoretical line-shape of the intersubband transition absorption was compared to the experimental measurements. From the lineshape, it was deduced that bound-to-continuum transtition is present in thick quantum dots and bound-to-bound transition is present in thinly grown quantum dots.

Investigation of multi-stack quantum dots-in-double-well infrared detectors

2009 ◽  
Author(s):  
M. N. Kutty ◽  
Y. D. Sharma ◽  
A. Barve ◽  
J. Shao ◽  
E. Plis ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Infrared Detectors

Tuning In0.3Ga0.7As∕GaAs multiple quantum dots for long-wavelength infrared detectors

2004 ◽  
Vol 85 (6) ◽  
pp. 1003-1005 ◽  
Author(s):  
Ying Chao Chua ◽  
E. A. Decuir ◽  
B. S. Passmore ◽  
K. H. Sharif ◽  
M. O. Manasreh ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Infrared Detectors ◽  
Multiple Quantum ◽  
Long Wavelength ◽  
Long Wavelength Infrared

Near infrared detectors based on HgSe and HgCdSe quantum dots generated at the liquid–liquid interface

2013 ◽  
Vol 1 (39) ◽  
pp. 6184 ◽  
Author(s):  
Manoj K. Jana ◽  
P. Chithaiah ◽  
Banavoth Murali ◽  
S. B. Krupanidhi ◽  
Kanishka Biswas ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Infrared Detectors ◽  
Near Infrared ◽  
Liquid Interface

Normal Incidence Intersubband Transitions in InGaAs/GaAs Quantum Dots With Non-monotonic Shift

2003 ◽  
Vol 776 ◽  
Author(s):  
M. L. Hussein ◽  
W. Q. Ma ◽  
G.J. Salamo
Keyword(s):  
Quantum Dots ◽  
Molecular Beam ◽  
Normal Incidence ◽  
Peak Shift ◽  
Infrared Region ◽  
Optical Absorption Coefficient ◽  
Intersubband Transitions ◽  
Long Wavelength ◽  
Absorbance Peak ◽  
Long Wavelength Infrared

AbstractMultiple layers of self assembled In0.3Ga0.7As quantum dots of different size were grown on GaAs (100) using molecular beam epitaxy. Fourier-transform infrared spectroscopy shows absorption in the long-wavelength infrared region (8–10 νm) under normal incidence. The absorbance peak shift with dot size was investigated and revealed non-monotonic behavior of intersubband transitions. The optical absorption coefficient was calculated to be in order of 3.8×103 cm-2.

Long-wavelength quantum-well infrared detectors based on intersubband transitions in InGaAs/InP quantum wells

1993 ◽  
Author(s):  
Jan Y. Andersson ◽  
Lennart Lundqvist ◽  
Z. F. Paska ◽  
Klaus P. Streubel ◽  
Johan Wallin
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Infrared Detectors ◽  
Intersubband Transitions ◽  
Long Wavelength
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