Isochoric heating of solid gold targets with the PW-laser-driven ion beams (Conference Presentation)

2017 ◽  
Author(s):  
Sven Steinke ◽  
Qing Ji ◽  
Stepan S. Bulanov ◽  
John Barnard ◽  
Henri Vincenti ◽  
...  
Keyword(s):  
Ion Beams ◽  
Solid Gold ◽  
Isochoric Heating

scholarly journals A 3D trajectory numerical simulation of the transport of energetic light ion beams in plasma targets

2005 ◽  
Vol 23 (2) ◽  
pp. 211-217 ◽  
Author(s):  
MANUEL D. BARRIGA-CARRASCO ◽  
GILLES MAYNARD
Keyword(s):  
Numerical Simulation ◽  
Dense Matter ◽  
Molecular Ions ◽  
Ion Beams ◽  
Numerical Code ◽  
Uniform Density ◽  
Dense Plasmas ◽  
Composition Profiles ◽  
Laser Sources ◽  
Isochoric Heating

We present in this paper a theoretical modeling and a numerical simulation devoted to the problem of transport and energy deposition profile of high current light ion beams interacting with dense matter. A numerical code, named MBC-ITFIP, is used to follow the trajectories of light atomic or molecular ions inside plasma targets with non-uniform density, temperature and composition profiles. MBC-ITFIP has been more specifically optimized for application of ion beams generated by the new high intensity laser sources, such as radiography and isochoric heating of dense plasmas.

Studies of high-energy density states using isochoric heating of matter by intense heavy ion beams: the HEDgeHOB Collaboration

2008 ◽  
Vol T132 ◽  
pp. 014023 ◽  
Author(s):  
N A Tahir ◽  
P Spiller ◽  
A R Piriz ◽  
A Shutov ◽  
I V Lomonosov ◽  
...  
Keyword(s):  
Energy Density ◽  
Heavy Ion ◽  
High Energy ◽  
Ion Beams ◽  
High Energy Density ◽  
Isochoric Heating

Axial Observation of X-Ray Spectra from a Beam-Foil Source

1988 ◽  
Vol 102 ◽  
pp. 339-342
Author(s):  
J.M. Laming ◽  
J.D. Silver ◽  
R. Barnsley ◽  
J. Dunn ◽  
K.D. Evans ◽  
...  
Keyword(s):  
Spectral Resolution ◽  
Heavy Ion ◽  
Ion Beams ◽  
Beam Axis ◽  
Doppler Broadening ◽  
X Ray ◽  
Beam Foil

AbstractNew observations of x-ray spectra from foil-excited heavy ion beams are reported. By observing the target in a direction along the beam axis, an improvement in spectral resolution, δλ/λ, by about a factor of two is achieved, due to the reduced Doppler broadening in this geometry.

Preparation of TEM samples by focused ion beams

1995 ◽  
Vol 53 ◽  
pp. 518-519
Author(s):  
John F. Walker ◽  
J C Reiner ◽  
C Solenthaler
Keyword(s):  
Integrated Circuit ◽  
Polycrystalline Silicon ◽  
Field Effect Transistor ◽  
High Spatial Resolution ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Precise Location ◽  
Effect Transistor ◽  
Circuit Technology

The high spatial resolution available from TEM can be used with great advantage in the field of microelectronics to identify problems associated with the continually shrinking geometries of integrated circuit technology. In many cases the location of the problem can be the most problematic element of sample preparation. Focused ion beams (FIB) have previously been used to prepare TEM specimens, but not including using the ion beam imaging capabilities to locate a buried feature of interest. Here we describe how a defect has been located using the ability of a FIB to both mill a section and to search for a defect whose precise location is unknown. The defect is known from electrical leakage measurements to be a break in the gate oxide of a field effect transistor. The gate is a square of polycrystalline silicon, approximately 1μm×1μm, on a silicon dioxide barrier which is about 17nm thick. The break in the oxide can occur anywhere within that square and is expected to be less than 100nm in diameter.

Atomic force microscopy (AFM) of the topography of silicon surfaces exposed to ion beams

1992 ◽  
Vol 50 (2) ◽  
pp. 1132-1133
Author(s):  
Mark Denker ◽  
Jennifer Wall ◽  
Mark Ray ◽  
Richard Linton
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Incidence Angle ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Beams ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Trace Impurities ◽  
Energy Dose

Reactive ion beams such as O2+ and Cs+ are used in Secondary Ion Mass Spectrometry (SIMS) to analyze solids for trace impurities. Primary beam properties such as energy, dose, and incidence angle can be systematically varied to optimize depth resolution versus sensitivity tradeoffs for a given SIMS depth profiling application. However, it is generally observed that the sputtering process causes surface roughening, typically represented by nanometer-sized features such as cones, pits, pyramids, and ripples. A roughened surface will degrade the depth resolution of the SIMS data. The purpose of this study is to examine the relationship of the roughness of the surface to the primary ion beam energy, dose, and incidence angle. AFM offers the ability to quantitatively probe this surface roughness. For the initial investigations, the sample chosen was <100> silicon, and the ion beam was O2+.Work to date by other researchers typically employed Scanning Tunneling Microscopy (STM) to probe the surface topography.

Chemical Precursors for GaAs Etching with low Energy ion Beams: Chlorine adsorption on GaAs(100)

1991 ◽  
Vol 223 ◽  
Author(s):  
Richard B. Jackman ◽  
Glenn C. Tyrrell ◽  
Duncan Marshall ◽  
Catherine L. French ◽  
John S. Foord
Keyword(s):  
Ion Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Ion Beam Etching ◽  
Chlorine Adsorption

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).

EXPANSION OF LASER-PRODUCED ION BEAMS IN AN AXIAL MAGNETIC FIELD

2002 ◽  
Vol 6 (4) ◽  
pp. 8
Author(s):  
J. Wolowski ◽  
J. Badziak ◽  
P. Parys ◽  
E. Woryna ◽  
J. Krasa ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Axial Magnetic Field ◽  
Ion Beams
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