Leakage current, self-clearing and actuation efficiency of nanometer-thin, low-voltage dielectric elastomer transducers tailored by thermal evaporation

2017 ◽  
Author(s):  
Tino Töpper ◽  
Bekim Osmani ◽  
Samuel Lörcher ◽  
Bert Müller
Keyword(s):  
Leakage Current ◽  
Thermal Evaporation ◽  
Low Voltage ◽  
Dielectric Elastomer

Physical and Optical Properties of The Films Ð’i2Te3-Bi2Se3

2015 ◽  
Vol 11 (2) ◽  
pp. 3017-3022
Author(s):  
Gurban Akhmedov
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Surface Temperature ◽  
Thermal Evaporation ◽  
Low Voltage ◽  
Internal Surface ◽  
Differential Resistance ◽  
Work Cycle

Results of researches show, that film p-n the structures received by a method of discrete thermal evaporation in a uniform work cycle, are suitable for use in low-voltage devices.  As a result of work are received p-n heterojunctions in thin-film execution, described by high values of differential resistance. Show that, thermo endurance - T0 maybe using as characteristic of thermo endurance of optic materials. If heating flow, destruction temperature and internal surface temperature is measured during test, it is possible to determine value T0 and other necessity characteristics. As a result of the taking test was lead to comparison evaluation of considered materials. Working range of heating flow and up level heating embark have been determined.

Time-Resolved Plasmonics used to On-Line Monitor Metal/Elastomer Deposition for Low-Voltage Dielectric Elastomer Transducers

2017 ◽  
Vol 3 (8) ◽  
pp. 1700073 ◽  
Author(s):  
Tino Töpper ◽  
Samuel Lörcher ◽  
Hans Deyhle ◽  
Bekim Osmani ◽  
Vanessa Leung ◽  
...  
Keyword(s):  
Low Voltage ◽  
Dielectric Elastomer ◽  
Time Resolved ◽  
On Line

Electrical Properties of a TiO2-SrO Varistor System

2014 ◽  
Vol 975 ◽  
pp. 168-172
Author(s):  
Tiago Delbrücke ◽  
Igor Schmidt ◽  
Sergio Cava ◽  
Vânia Caldas Sousa
Keyword(s):  
Titanium Dioxide ◽  
Electrical Properties ◽  
Field Strength ◽  
Leakage Current ◽  
Low Voltage ◽  
Nonlinear Coefficient ◽  
Breakdown Field ◽  
Strontium Oxide ◽  
Breakdown Field Strength

The addition of different dopants affects the densification and electrical properties of TiO2 based varistor ceramics. The nonlinear current (I) and voltage (V) characteristics of titanium dioxide are examined when doped with small quantities (0.5-2 at.%) of strontium oxide. This paper discusses the electrical properties of such an SrO doped TiO2 system, and demonstrates that some combinations produce electrical properties suitable for use as low voltage varistors. The high value of the nonlinear coefficient (α) (6.6), the breakdown field strength (Eb) (328 V/cm) and the leakage current (Ir) (0.22 mA/cm2) obtained in a system newly doped with SrO, are all adequate properties for application in low voltage varistors.

δ-Nb-doping Effect to The Interface Between IrO2 Top Electrode and Pb(Zr, Ti)O3 by Metal Organic Chemical Vapor Deposition

2004 ◽  
Vol 830 ◽  
Author(s):  
Osamu Matsuura ◽  
Hideki Yamawaki ◽  
Masaki Nakabayashi ◽  
Yoshimasa Horii ◽  
Yoshihiro Sugiyama
Keyword(s):  
Leakage Current ◽  
Low Voltage ◽  
Chemical Vapor ◽  
Doping Effect ◽  
Organic Chemical ◽  
Electrical Characteristics ◽  
Positive Direction ◽  
Metal Organic ◽  
Nb Doping ◽  
Organic Chemical Vapor Deposition

ABSTRACTWe studied the Nb doping effect on the electrical characteristics of MOCVD-PZT capacitors using uniformly Nb-doped Pb(Zr, Ti)O3 (UND-PZT) and δ-Nb-doped PZT (DND-PZT) prepared by MOCVD. The 2Pr for UND-PZT was small and the UND-PZT hysteresis shifted in a positive direction. However, the 2Pr for DND-PZT decreased by only 5.5% and the hysteresis of DND-PZT didn't shift. In addition, the leakage current of DND-PZT decreased by one order at low bias compared to non-doped PZT, because the δ-Nb-doping layer maintains the barrier height, higher than that of none-doped PZT due to defect compensation. As a result, Nb1% DND-PZT was well suited to use Nb doping which decreases leakage current at low voltage and maintains 2Pr.

Low voltage stress-induced leakage current in 1.4–2.1 nm SiON and HfSiON gate dielectric layers

2005 ◽  
Vol 20 (8) ◽  
pp. 668-672 ◽  
Author(s):  
Robert O'Connor ◽  
Stephen McDonnell ◽  
Greg Hughes ◽  
Robin Degraeve ◽  
Thomas Kauerauf
Keyword(s):  
Leakage Current ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Dielectric Layers ◽  
Voltage Stress ◽  
Stress Induced Leakage Current

scholarly journals Failure Mechanisms in Solid Electrolytic Capacitors

1977 ◽  
Vol 3 (4) ◽  
pp. 233-246 ◽  
Author(s):  
J. Brettle ◽  
N. F. Jackson
Keyword(s):  
Failure Mechanism ◽  
Leakage Current ◽  
Low Voltage ◽  
Nitrate Solution ◽  
Basic Mechanism ◽  
Reform Process ◽  
Electrical Measurements ◽  
Crystalline Oxide ◽  
Before And After ◽  
Mechanism Of Failure

The failure mechanism of solid tantalum and aluminium capacitors have been investigated using a combination of electrical measurements and electron microscopy. The capacitor dielectric was examined before and after life testing and changes correlated with electrical measurements.The basic mechanism of failure of solid tantalum capacitors is found to be field crystallisation of the essentially amorphous dielectric oxide. The growth of higher conductivity crystalline oxide during operation of the capacitors causes an increase in leakage current and may result in catastrophic failure. The effect of field crystallisation can be minimised by using high purity tantalum to reduce the number of crystallisation nucleation sites. Since crystalline growth is primarily dependant on applied voltage, high voltage capacitors are much more susceptible to failure than low voltage units.There appears to be no long term failure mechanism in solid aluminium capacitors. However, a particular problem with these units is that they are difficult to make. This is because the anodic layer is chemically less stable in the case of aluminium than in the case of tantalum. The attack is initiated during the deposition of manganese oxide by pyrolysis from manganese nitrate solution and developed by the reform process. Solid aluminium capacitors often have a lower capacitance and higher initial leakage current than comparable solid tantalum units; however, the leakage current decreases on life tests and their reliability is high.

scholarly journals Printing low-voltage dielectric elastomer actuators

2015 ◽  
Vol 107 (24) ◽  
pp. 244104 ◽  
Author(s):  
Alexandre Poulin ◽  
Samuel Rosset ◽  
Herbert R. Shea
Keyword(s):  
Low Voltage ◽  
Dielectric Elastomer ◽  
Dielectric Elastomer Actuators

scholarly journals INVESTIGATION OF LEAKAGE CURRENT DISTRIBUTION IN ELECTRICAL WIRING THAT FEEDS A GROUP OF ELECTRIC RECEIVERS WITH A MOTOR LOAD

2020 ◽  
Vol 1 (7(76)) ◽  
pp. 12-14
Author(s):  
O. P. Balashov
Keyword(s):  
Leakage Current ◽  
Current Distribution ◽  
Low Voltage ◽  
Regression Equation ◽  
Motor Load ◽  
Electrical Wiring

The article investigates the distribution of leakage current in low voltage wiring. The regression equation is obtained, which makes it possible to accurately predict the value of the leakage current of the electrical wiring supplying a group of power receivers with motor load.

scholarly journals Multi level Transformer less PV Inverter with Reduced Switching Losses and Elimination of CM leakage Current

2020 ◽  
Vol 9 (11) ◽  
pp. 223-228
Keyword(s):  
Leakage Current ◽  
Low Voltage ◽  
Stable Operation ◽  
Efficient Operation ◽  
Low Voltage Ride Through ◽  
Point Tracking ◽  
Pv Inverter ◽  
Switching Losses ◽  
Power Point Tracking ◽  
Power Point

In order to have efficient operation of grid connected Photovoltaic (PV) inverter, the issue of leakage current must be completely eliminated. For this new transformerless multilevel inverter is proposed in this paper with (k-1) levels in which k denotes the number of switches. The inverter provides zero common mode leakage current and also capable of operating under half of rated PV voltage, hence make this proposed inverter topology as LVRT (low voltage ride through) capable. Different modes are employed for the stable operation of the proposed inverter with varying input PV voltage. Simulation work is carried out for three, five and seven level proposed inverter topologies in MATLAB/Simulink software which determines its maximum power point tracking performance. Here the THD (Total Harmonic Distortions) of 3, 5 and 7 levels are compared.

Sign in / Sign up

Export Citation Format

Share Document