scholarly journals Minority carrier diffusion lengths and mobilities in low-doped n-InGaAs for focal plane array applications

2017 ◽  
Author(s):  
Alexandre W. Walker ◽  
Mike W. Denhoff
Keyword(s):  
Focal Plane ◽  
Minority Carrier ◽  
Focal Plane Array ◽  
Carrier Diffusion

Analysis of charge-carrier diffusion in the photosensing films of HgCdTe infrared focal plane array photodetectors

2015 ◽  
Vol 118 (12) ◽  
pp. 124508 ◽  
Author(s):  
A. V. Vishnyakov ◽  
V. A. Stuchinsky ◽  
D. V. Brunev ◽  
A. V. Zverev ◽  
S. A. Dvoretsky
Keyword(s):  
Charge Carrier ◽  
Focal Plane ◽  
Focal Plane Array ◽  
Infrared Focal Plane Array ◽  
Carrier Diffusion ◽  
Charge Carrier Diffusion

Surface recombination effects on minority carrier diffusion length measurements using electron beam-induced current

1990 ◽  
Vol 48 (4) ◽  
pp. 744-745
Author(s):  
D.P. Malta ◽  
M.L. Timmons
Keyword(s):  
Electron Beam ◽  
Beam Energy ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Effective Diffusion ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Logarithmic Scale ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion

Measurement of the minority carrier diffusion length (L) can be performed by measurement of the rate of decay of excess minority carriers with the distance (x) of an electron beam excitation source from a p-n junction or Schottky barrier junction perpendicular to the surface in an SEM. In an ideal case, the decay is exponential according to the equation, I = Ioexp(−x/L), where I is the current measured at x and Io is the maximum current measured at x=0. L can be obtained from the slope of the straight line when plotted on a semi-logarithmic scale. In reality, carriers recombine not only in the bulk but at the surface as well. The result is a non-exponential decay or a sublinear semi-logarithmic plot. The effective diffusion length (Leff) measured is shorter than the actual value. Some improvement in accuracy can be obtained by increasing the beam-energy, thereby increasing the penetration depth and reducing the percentage of carriers reaching the surface. For materials known to have a high surface recombination velocity s (cm/sec) such as GaAs and its alloys, increasing the beam energy is insufficient. Furthermore, one may find an upper limit on beam energy as the diameter of the signal generation volume approaches the device dimensions.

Dual Band MWIR/LWIR Focal Plane Array Test Results

1999 ◽  
Author(s):  
A. Goldberg ◽  
S. Wang ◽  
M. Sundaram ◽  
P. Uppal ◽  
M. Winn ◽  
...  
Keyword(s):  
Focal Plane ◽  
Focal Plane Array ◽  
Dual Band ◽  
Test Results

Dual-Band Imaging of Military Targets Using a QWIP Focal Plane Array

2001 ◽  
Author(s):  
A. Goldberg ◽  
T. Fischer ◽  
S. Kennerly ◽  
S. Wang ◽  
M. Sundaram
Keyword(s):  
Focal Plane ◽  
Focal Plane Array ◽  
Dual Band

Staggered Row Focal Plane Array Analysis

1991 ◽  
Author(s):  
A. Register ◽  
A. Henshaw
Keyword(s):  
Focal Plane ◽  
Focal Plane Array ◽  
Array Analysis
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