Silicon-based visible light meta-devices (Conference Presentation)

Author(s):  
Jonathan A. Fan ◽  
Jianji Yang ◽  
David Sell ◽  
Sage Doshay ◽  
Kai Zhang
Keyword(s):  
Nature ◽  
1996 ◽  
Vol 384 (6607) ◽  
pp. 338-341 ◽  
Author(s):  
K. D. Hirschman ◽  
L. Tsybeskov ◽  
S. P. Duttagupta ◽  
P. M. Fauchet

Author(s):  
Kai Xu ◽  
Bao Yue Zhang ◽  
Yihong Hu ◽  
Muhammad Waqas Khan ◽  
Rui Ou ◽  
...  

A 2D Ga2S3 enabled all-optical switch is realized upon a silicon-based on-chip platform. With the unique optical properties of the 2D nanoflakes, the device exhibits excellent switching behaviors driven by visible light at a low power density.


2013 ◽  
Vol 538 ◽  
pp. 341-344 ◽  
Author(s):  
Yuan Ming Huang ◽  
Qing Lan Ma ◽  
Bao Gai Zhai

Porous silicon based visible light photodetectors with the characteristic structures of Al/porous silicon/Si were developed by evaporating aluminum contact onto the top surface of porous silicon films to form metal-semiconductor-metal Schottky junctions. The spongy nanostructures of the porous silicon film were characterized with the scanning electron microscopy. The current-voltage characteristics, the biased voltage dependent photocurrents and the illumination intensity dependent photocurrents were measured for the Al/porous silicon/Si visible light photodetectors. It is found that the photocurrents as large as 4 mA/cm2 can be achieved for the porous silicon based visible light photodetectors under the normal illumination of one 500 W tungsten lamp


1997 ◽  
Vol 486 ◽  
Author(s):  
Ch. Buchal ◽  
M. Löken ◽  
M. Siegert

AbstractThe potential of silicon-based designs for various optoelectronic functions is discussed. Sibased light detectors are the most advanced, especially in the form of metal-Si-metal (MSM) photodetectors. They use Si band to band absorption for visible light and Schottky-barrier emission for the infrared (IR). The different light sources show rapid progress, but still face challenges to reach a quantum efficiency of 10−2. In addition to the intrinsic silicon based designs, some new Si breadboard concepts are shown: especially for waveguides, modulators and all-optical amplifiers, it may be advantageous to add entirely different materials (polymers, glasses, BaTiO3 or Al2O3) onto the Si wafer.


1996 ◽  
Vol 452 ◽  
Author(s):  
T. Makimura ◽  
Y. Kunu ◽  
N. Ono ◽  
K. Murakami

AbstractApplying laser ablation technique, we have synthesized two types of SiO2 films that include nanometer-sized Si particles. One is synthesized by alternative deposition of Si nanoparticles layers and SiO2 layers. The synthesized film exhibits red photoluminescence (PL) with a peak energy below 1.5 eV. The other is synthesized by annealing at 1000°C of SiOx films, which are formed by laser ablation in diluted O2 gas. We find that there is a narrow range of composition for efficient red PL. Based on the experimental results, we tentatively discuss a possible model for the origin of the red PL.


ACS Nano ◽  
2015 ◽  
Vol 9 (11) ◽  
pp. 11234-11240 ◽  
Author(s):  
Maria J. Esplandiu ◽  
Ali Afshar Farniya ◽  
Adrian Bachtold

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