KrF laser light interaction with intrinsic defects in silica

1990 ◽  
Author(s):  
Robert H. Magruder III ◽  
Paul W. Wang ◽  
Robert A. Weeks ◽  
Donald L. Kinser
Keyword(s):  
Laser Light ◽  
Intrinsic Defects ◽  
Krf Laser ◽  
Light Interaction

Photochemical Pattern Etching of Single-Crystalline 3C-SiC

1997 ◽  
Vol 495 ◽  
Author(s):  
T. Mori ◽  
K. Hatao ◽  
M. Murahara
Keyword(s):  
Excimer Laser ◽  
Surface Reaction ◽  
Laser Light ◽  
Sample Surface ◽  
Etch Depth ◽  
Reaction Cell ◽  
Single Crystalline ◽  
Excimer Lamp ◽  
Krf Laser ◽  
Krf Excimer Laser

ABSTRACTA single-crystalline 3C-SiC is very difficult to etch compared with a polycrystalline SiC. Thus, a photochemical pattern etching of the SiC was demonstrated by using Xe2* excimer lamp and ArF or KrF excimer laser. To promote the surface reaction, a Xe2* excimer lamp was employed to produce many radicals on the sample surface; simultaneously, ArF or KrF laser light irradiated the surface via a circuit pattern to dissociate the Si-C bonds. The Si and C reacted with the F and N radicals photo-dissociated from NF3 gas to form SiF4, CFn and CN, which diffused in the reaction cell. As a result, the single-crystalline 3C-SiC was photo-chemically etched effectively. With the NF3 gas of 200Torr, the Xe2* excimer lamp of 7mW/cm2, and the KrF excimer laser of 650mJ/cm2, 20Hz and 10,000shots, the etch depth of 700 Å was successfully achieved.

Photo-Chemical Etching on Silicon-Carbide by Using Krf Excimer Laser and Xe2* Excimer Lamp

1995 ◽  
Vol 397 ◽  
Author(s):  
K. Hasegawa ◽  
M. Murahara
Keyword(s):  
Silicon Carbide ◽  
Chemical Etching ◽  
Laser Light ◽  
Sample Surface ◽  
High Melting Point ◽  
Excimer Lamp ◽  
Photochemical Etching ◽  
Gas Atmosphere ◽  
Krf Laser ◽  
Krf Excimer Laser

ABSTRACTSilicon-carbide (SiC) has excellent refractivity in the range of soft X-ray and is well-used as a diffraction grating for Synchrotron-radiation (SR) light. This material has a high melting point, hardness and chemical stability. Therefore, etching of the material by chemical or physical methods is very difficult. We reported a photo-chemical etching method in which a SiC surface is placed in NF3 gas atmosphere and irradiated by the Xe2* excimer lamp light parallelly and the grating patterned KrF laser light of 248nm perpendicularly on the sample surface. The Xe2* excimer lamp light are employed for NF3 gas decomposition, and KrF laser light used for excitation on the sample surface. This photochemical etching reaction are detected by XPS, QMS and FTIR measurements. This method achieved 0.18 Å/shot in etching efficiency, and became maximum approximately 7 times as high as ArF laser light for photodecomposition.

Mechanisms of Bragg grating formation in UV hypersensitized standard germanosilicate fibers with KrF laser light

2006 ◽  
Vol 23 (8) ◽  
pp. 1556 ◽  
Author(s):  
Matthieu Lancry ◽  
Pierre Niay ◽  
Marc Douay ◽  
Bertrand Poumellec
Keyword(s):  
Laser Light ◽  
Bragg Grating ◽  
Krf Laser ◽  
Grating Formation

Review on robust laser light interaction with titania – Patterning, crystallisation and ablation processes

2020 ◽  
pp. 100297
Author(s):  
Katarzyna Siuzdak ◽  
Łukasz Haryński ◽  
Jakub Wawrzyniak ◽  
Katarzyna Grochowska
Keyword(s):  
Laser Light ◽  
Light Interaction

New nonlinear parameter in electron laser-light interaction

1970 ◽  
Vol 31 (3) ◽  
pp. 99-100 ◽  
Author(s):  
Z. Fried ◽  
J.F. Dawson
Keyword(s):  
Laser Light ◽  
Nonlinear Parameter ◽  
Light Interaction

IR pulsed laser light interaction with soiled cellulose and paper

2002 ◽  
Vol 75 (6) ◽  
pp. 673-676 ◽  
Author(s):  
J. Kolar ◽  
M. Strlič ◽  
M. Marinček
Keyword(s):  
Laser Light ◽  
Pulsed Laser ◽  
Light Interaction
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