Temperature dependence of gain in a highly stacked quantum-dot semiconductor optical amplifiier

2017 ◽  
Author(s):  
Naoya Yoshida ◽  
Yuu Fukae ◽  
Kouichi Akahane ◽  
Naokatsu Yamamoto ◽  
Atsushi Matsumoto ◽  
...  
2010 ◽  
Vol 107 (7) ◽  
pp. 073506 ◽  
Author(s):  
Osamu Kojima ◽  
Hiroaki Nakatani ◽  
Takashi Kita ◽  
Osamu Wada ◽  
Kouichi Akahane

2014 ◽  
Vol 875-877 ◽  
pp. 9-13
Author(s):  
Ya Fen Wu ◽  
Jiunn Chyi Lee

We investigate the effect of carrier dynamics on the temperature dependence of photoluminescence spectra from InAs/GaAs quantum dot heterostructures with different dot size uniformity. Intersublevel relaxation lifetimes and carrier transferring mechanisms are simulated using a model based on carriers relaxing and thermal emission of each discrete energy level in the quantum dot system. Calculated relaxation lifetimes are decreasing with temperature and have larger values for sample with lower dot size uniformity. In the quantitative discussion of carrier dynamics, the influence of thermal redistribution on carriers relaxing process of quantum dot system is demonstrated by our model.


2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Xiang-Xiang Song ◽  
Zhuo-Zhi Zhang ◽  
Jie You ◽  
Di Liu ◽  
Hai-Ou Li ◽  
...  

ACS Nano ◽  
2018 ◽  
Vol 12 (8) ◽  
pp. 7741-7749 ◽  
Author(s):  
Rachel H. Gilmore ◽  
Samuel W. Winslow ◽  
Elizabeth M. Y. Lee ◽  
Matthew Nickol Ashner ◽  
Kevin G. Yager ◽  
...  

2003 ◽  
Vol 236 (1) ◽  
pp. R1-R3 ◽  
Author(s):  
A. A. Tonkikh ◽  
V. G. Dubrovskii ◽  
G. E. Cirlin ◽  
V. A. Egorov ◽  
V. M. Ustinov ◽  
...  

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