Impact of InGaN alloy disorder on LED properties (Conference Presentation)

2017 ◽  
Author(s):  
Claude Weisbuch
Keyword(s):  
Ingan Alloy ◽  
Alloy Disorder

UV Emission Mechanisms in Quaternary AlInGaN Epilayers and Multiple Quantum Wells

2002 ◽  
Vol 722 ◽  
Author(s):  
Mee-Yi Ryu ◽  
C. Q. Chen ◽  
E. Kuokstis ◽  
J. W. Yang ◽  
G. Simin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Excitation Power ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Excitation Power Density ◽  
Light Emitting ◽  
Uv Emission ◽  
Alloy Disorder

AbstractWe present the results on investigation and analysis of photoluminescence (PL) dynamics of quaternary AlInGaN epilayers and AlInGaN/AlInGaN multiple quantum wells (MQWs) grown by a novel pulsed metalorganic chemical vapor deposition (PMOCVD). The emission peaks in both AlInGaN epilayers and MQWs show a blueshift with increasing excitation power density. The PL emission of quaternary samples is attributed to recombination of carriers/excitons localized at band-tail states. The PL decay time increases with decreasing emission photon energy, which is a characteristic of localized carrier/exciton recombination due to alloy disorder. The obtained properties of AlInGaN materials grown by a PMOCVD are similar to those of InGaN. This indicates that the AlInGaN system is promising for ultraviolet applications such as the InGaN system for blue light emitting diode and laser diode applications.

Effective masses and evidence for alloy disorder effects in GaxIn1−xAsyP1−y investigated by shallow donor photoconductivity

1987 ◽  
Vol 30 (2) ◽  
pp. 217-220 ◽  
Author(s):  
J.M. Chamberlain ◽  
A.A. Reeder ◽  
R.J. Turner ◽  
E. Kuphal ◽  
J.L. Benchimol
Keyword(s):  
Shallow Donor ◽  
Disorder Effects ◽  
Effective Masses ◽  
Alloy Disorder

Effect of alloy disorder on deep levels in Hg1−xCdxTe

1986 ◽  
Vol 4 (4) ◽  
pp. 2195-2199 ◽  
Author(s):  
Charles W. Myles ◽  
William C. Ford
Keyword(s):  
Deep Levels ◽  
Alloy Disorder

Influence of alloy disorder on the vibrational properties of Si/Ge superlattices

1990 ◽  
Vol 41 (6) ◽  
pp. 3769-3777 ◽  
Author(s):  
S. Wilke ◽  
J. Maek ◽  
B. Velický
Keyword(s):  
Vibrational Properties ◽  
Alloy Disorder

Carrier localization induced by alloy disorder in nitride devices: theory and experiments (Conference Presentation)

2018 ◽  
Author(s):  
Marcel Filoche ◽  
Marco Piccardo ◽  
Chi-Kang Li ◽  
Yuh-Renn Wu ◽  
James S. Speck ◽  
...  
Keyword(s):  
Carrier Localization ◽  
Alloy Disorder ◽  
Theory And Experiments
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