Solution-deposited Al2O3 dielectric towards fully-patterned thin film transistors on shape memory polymer

Author(s):  
Trey B. Daunis ◽  
Gerardo Gutierrez-Heredia ◽  
Ovidio Rodriguez-Lopez ◽  
Jian Wang ◽  
Walter E. Voit ◽  
...  
2018 ◽  
Vol 33 (17) ◽  
pp. 2454-2462 ◽  
Author(s):  
Trey B. Daunis ◽  
Diego Barrera ◽  
Gerardo Gutierrez-Heredia ◽  
Ovidio Rodriguez-Lopez ◽  
Jian Wang ◽  
...  

Abstract


2013 ◽  
Vol 25 (22) ◽  
pp. 3095-3099 ◽  
Author(s):  
Adrian Avendano-Bolivar ◽  
Taylor Ware ◽  
David Arreaga-Salas ◽  
Dustin Simon ◽  
Walter Voit

2016 ◽  
Author(s):  
Kyle R. Van Volkinburg ◽  
Thao Nguyen ◽  
Jonathan D. Pegan ◽  
Michelle Khine ◽  
Gregory N. Washington

1996 ◽  
Vol 5 (4) ◽  
pp. 483-491 ◽  
Author(s):  
Hisaaki Tobushi ◽  
Hisashi Hara ◽  
Etsuko Yamada ◽  
Shunichi Hayashi

Soft Matter ◽  
2016 ◽  
Vol 12 (1) ◽  
pp. 106-114 ◽  
Author(s):  
Ming Lei ◽  
Ben Xu ◽  
Yutao Pei ◽  
Haibao Lu ◽  
Yong Qing Fu

This report proposed a study on the micro-mechanics of nanostructured carbon/shape memory polymer hybrid thin film.


2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.


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