200-mm GaN/Si technology for power device applications (Conference Presentation)

2017 ◽  
Author(s):  
Takashi Egawa
Keyword(s):  
Power Device ◽  
Device Applications

High hole mobility in boron doped diamond for power device applications

2009 ◽  
Vol 94 (9) ◽  
pp. 092102 ◽  
Author(s):  
Pierre-Nicolas Volpe ◽  
Julien Pernot ◽  
Pierre Muret ◽  
Franck Omnès
Keyword(s):  
Hole Mobility ◽  
Power Device ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Device Applications

A field effect transistor using highly nitrogen-doped CVD diamond for power device applications

2003 ◽  
Vol 216 (1-4) ◽  
pp. 483-489 ◽  
Author(s):  
Yoko Yokoyama ◽  
Xueqing Li ◽  
Kuang Sheng ◽  
Andrei Mihaila ◽  
Tanija Traikovic ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Cvd Diamond ◽  
Power Device ◽  
Nitrogen Doped ◽  
Device Applications ◽  
Effect Transistor

Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 mΩ·cm2 Specific On-Resistance for Power Device Applications

2019 ◽  
Vol 66 (8) ◽  
pp. 3441-3446 ◽  
Author(s):  
Chia-Hsun Wu ◽  
Jian-You Chen ◽  
Ping-Cheng Han ◽  
Ming-Wen Lee ◽  
Kun-Sheng Yang ◽  
...  
Keyword(s):  
Power Device ◽  
Device Applications

Direct Bonding of GaAs and Diamond for High Power Device Applications

2020 ◽  
Vol MA2020-02 (22) ◽  
pp. 1634-1634
Author(s):  
Jianbo Liang ◽  
Yuji Nakamura ◽  
Yutaka Ohno ◽  
Yasuo Shimizu ◽  
Tianzhuo Zhan ◽  
...  
Keyword(s):  
High Power ◽  
Power Device ◽  
Device Applications

Microbial fuel cells as a sustainable platform technology for bioenergy, biosensing, environmental monitoring, and other low power device applications

Fuel ◽  
2019 ◽  
Vol 255 ◽  
pp. 115682 ◽  
Author(s):  
Smita S. Kumar ◽  
Vivek Kumar ◽  
Ritesh Kumar ◽  
Sandeep K. Malyan ◽  
Arivalagan Pugazhendhi
Keyword(s):  
Fuel Cells ◽  
Low Power ◽  
Environmental Monitoring ◽  
Microbial Fuel Cells ◽  
Power Device ◽  
Platform Technology ◽  
Device Applications

Fabrication of diamond/Cu direct bonding interface for power device applications

2019 ◽  
Vol 59 (SB) ◽  
pp. SBBB03 ◽  
Author(s):  
Shinji Kanda ◽  
Yasuo Shimizu ◽  
Yutaka Ohno ◽  
Kenji Shirasaki ◽  
Yasuyoshi Nagai ◽  
...  
Keyword(s):  
Bonding Interface ◽  
Power Device ◽  
Device Applications

Investigation of Low Off-Angled 4H-SiC Epitaxial Wafers for Power Device Applications

2017 ◽  
Vol 6 (8) ◽  
pp. P547-P552
Author(s):  
Kazutoshi Kojima ◽  
Keiko Masumoto ◽  
Hirokuni Asamizu ◽  
Shinsuke Harada ◽  
Hajime Okumura
Keyword(s):  
Power Device ◽  
Device Applications

Investigation of Structural Defects in 4H SiC Wafers

1994 ◽  
Vol 339 ◽  
Author(s):  
M. Tuominen ◽  
R. Yakimova ◽  
R. C. Glass ◽  
T. Tuomi ◽  
E. Janzén
Keyword(s):  
Electron Microscopy ◽  
Structural Defects ◽  
Semiconductor Materials ◽  
Power Device ◽  
Structural Studies ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Device Applications ◽  
Scanning Electron

ABSTRACTFor high-power device applications SiC has better physical and electronic properties than the traditional semiconductor materials Si and GaAs. In this work, structural defects of 4H SiC wafers have been studied and partly compared with results from a previous study of 6H material. Optical microscopy, scanning electron microscopy, high-resolution X-ray diffraction and synchrotron X-ray topography were used for structural studies of 4H SiC.Optical micrographs show micropipes and larger specific defects - tubes and cracks. X-ray rocking curve peaks are broad and split revealing the mosaicity of the material. Synchrotron X-ray topographs show areas having a large number of defects, images of cracks and micropipes, and misorientated regions close to the micropipes.

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