Determination of mechanical stress in the silicon nitride films with a scanning electron microscope

2016 ◽  
Author(s):  
N. A. Djuzhev ◽  
E. E. Gusev ◽  
A. A. Dedkova ◽  
N. Patiukov
Keyword(s):  
Electron Microscope ◽  
Silicon Nitride ◽  
Scanning Electron Microscope ◽  
Mechanical Stress ◽  
Silicon Nitride Films ◽  
Scanning Electron

scholarly journals Transferring Grains from Single-Grain Luminescence Discs to SEM Specimen Stubs

2019 ◽  
Vol 2 (4) ◽  
pp. 87 ◽  
Author(s):  
Isa Doverbratt ◽  
Helena Alexanderson
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Material Properties ◽  
Luminescence Analysis ◽  
Geochemical Composition ◽  
Single Grain ◽  
Grain Properties ◽  
Luminescence Characteristics ◽  
Scanning Electron

The grain transfer protocol presents a step-by-step guide on how to successfully transfer positioned grains from a single-grain luminescence disc to a scanning electron microscope (SEM) specimen stub and how to transport them between laboratories. Single-grain luminescence analysis allows the determination of luminescence characteristics for individual sand-sized grains. By combining such luminescence data with other grain properties such as geochemical composition, shape, or structure also at single-grain level, it is possible to investigate factors controlling luminescence signals or study other material properties. The non-luminescence properties are typically measured in another instrument; thus, grains need to be transferred between machines and sample holders, and sometimes also between laboratories. It is then important that the position of each grain is known and stable so that the properties from the same grain are compared. By providing an easily observable orientation marker on the specimen stub, the hundred numbered grains from the single-grain disc can be transferred and later identified when analyzed in the SEM.

Field Emission and Electron Microscopy

2000 ◽  
Vol 6 (4) ◽  
pp. 380-387 ◽  
Author(s):  
Christopher John Edgcombe ◽  
Ugo Valdrè
Keyword(s):  
Electron Microscopy ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Field Emission ◽  
Optical Bench ◽  
Carbon Contamination ◽  
Electron Sources ◽  
Basic Properties ◽  
Scanning Electron

AbstractAn overview and new results are presented of the investigations carried out in the last 5 years on nano-sized tips by means of electron microscopy, an electron optical bench, and computation. Tungsten and, in particular, carbon nano-tips prepared by carbon contamination in a scanning electron microscope, were studied for applications as field-emission electron sources. Several features of their use are described and the results concerning the determination of some of their basic properties are reported.

Field Emission and Electron Microscopy

2000 ◽  
Vol 6 (4) ◽  
pp. 380-387
Author(s):  
Christopher John Edgcombe ◽  
Ugo Valdrè
Keyword(s):  
Electron Microscopy ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Field Emission ◽  
Optical Bench ◽  
Carbon Contamination ◽  
Electron Sources ◽  
Basic Properties ◽  
Scanning Electron

Abstract An overview and new results are presented of the investigations carried out in the last 5 years on nano-sized tips by means of electron microscopy, an electron optical bench, and computation. Tungsten and, in particular, carbon nano-tips prepared by carbon contamination in a scanning electron microscope, were studied for applications as field-emission electron sources. Several features of their use are described and the results concerning the determination of some of their basic properties are reported.

Determination of the diameter of the electron probe of a scanning electron microscope

1993 ◽  
Vol 36 (12) ◽  
pp. 1348-1350
Author(s):  
Yu. A. Novikov ◽  
A. V. Rakov ◽  
I. Yu. Stekolin ◽  
I. B. Strizhkov
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Electron Probe ◽  
Scanning Electron

scholarly journals Determination of Polystyrene Layer Thickness and Zinc Phthalocyanine (Znpc) with Modified Sauerbrey Equations and Scanning Electron Microscope (SEM)

Natural-B ◽  
2014 ◽  
Vol 2 (4) ◽  
pp. 331-335
Author(s):  
Lalu A. Didik ◽  
Eka Rahmawati ◽  
Fadli Robiandi ◽  
Susi Rahayu ◽  
Abdurrouf Abdurrouf ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Layer Thickness ◽  
Zinc Phthalocyanine ◽  
Scanning Electron

scholarly journals Experiment on Strength and Failure Behavior of Sandstone Containing Pre-Existing Cracks Under Brazilian Compression

2021 ◽  
Vol 9 ◽  
Author(s):  
Xiaojian Cao ◽  
Han Zhang ◽  
Jun Yu ◽  
Tianchong Yu ◽  
Yuxing Qing
Keyword(s):  
Mechanical Properties ◽  
Tensile Strength ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Failure Process ◽  
Experimental Results ◽  
Failure Behavior ◽  
Axial Deformation ◽  
Scanning Electron

Determination of the mechanical properties of rock containing pre-existing cracks under tension condition is of great significance to understand the failure process of rock in engineering. This paper presents the experimental results of sandstone containing pre-existing cracks under Brazilian compression. The characteristics of the microcracks were analyzed by a scanning electron microscope. The results show that the rock containing pre-existing cracks has an obvious anisotropic characteristic. When the crack inclination is 45°, the rock has the minimum tensile strength and the weakest axial deformation resistance.

A Novel Approach on Fractography Through Infrared Microscopy

2019 ◽  
Author(s):  
Allan Norico ◽  
Rommel Estores
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Mechanical Stress ◽  
Optical Microscope ◽  
Secondary Crack ◽  
Infrared Microscopy ◽  
Novel Approach ◽  
Electrical Overstress ◽  
Scanning Electron

Abstract Some of the most challenging task in analyzing fractures is a die that has not been fully cracked apart and a cracked die with electrical overstress damage. Traditional tools such as simple magnifying lens, optical microscope and up to the advance Scanning Electron Microscope are not enough to study the internal fractures or markings that could lead back to the origin of the crack. In order to study these internal fractures, the analyst tends to break the sample into pieces. However, this method creates additional mechanical stress and leads to a secondary crack where the point of origin will be difficult to analyze. This paper aims to introduce infrared microscopy in fractography (mainly on silicon) using cases and techniques to minimize the occurrence of secondary crack in analyzing internal fractures.

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