Gas spectroscopy system with 245 GHz transmitter and receiver in SiGe BiCMOS

2017 ◽  
Author(s):  
Klaus Schmalz ◽  
Nick Rothbart ◽  
Johannes Borngräber ◽  
Selahattin Berk Yilmaz ◽  
Dietmar Kissinger ◽  
...  
Keyword(s):  
Sige Bicmos ◽  
Spectroscopy System

Gas spectroscopy system with transmitters and receivers in SiGe BiCMOS for 225-273 GHz

2017 ◽  
Author(s):  
Klaus Schmalz ◽  
Nick Rothbart ◽  
Heinz-Wilhelm Hübers ◽  
Johannes Borngräber ◽  
Selahattin Berk Yilmaz ◽  
...  
Keyword(s):  
Sige Bicmos ◽  
Spectroscopy System

Gas Spectroscopy System for Breath Analysis at mm-wave/THz Using SiGe BiCMOS Circuits

2017 ◽  
Vol 65 (5) ◽  
pp. 1807-1818 ◽  
Author(s):  
Klaus Schmalz ◽  
Nick Rothbart ◽  
Philipp F.-X. Neumaier ◽  
Johannes Borngraber ◽  
Heinz-Wilhelm Hubers ◽  
...  
Keyword(s):  
Breath Analysis ◽  
Sige Bicmos ◽  
Spectroscopy System

Ion Heating Characteristics of Merging Spherical Tokamak Plasmas using the Improved Doppler Tomography Spectroscopy System

2014 ◽  
Vol 134 (9) ◽  
pp. 523-524
Author(s):  
Hideya Koike ◽  
Masanobu Annoura ◽  
Kento Nishida ◽  
Hiroshi Tanabe ◽  
Michiaki Inomoto ◽  
...  
Keyword(s):  
Spherical Tokamak ◽  
Tokamak Plasmas ◽  
Ion Heating ◽  
Doppler Tomography ◽  
Spectroscopy System

Continuous-wave Terahertz Spectroscopy System Based on Photodiodes

PIERS Online ◽  
2010 ◽  
Vol 6 (4) ◽  
pp. 390-394 ◽  
Author(s):  
Tadao Nagatsuma ◽  
Akira Kaino ◽  
Shintaro Hisatake ◽  
Katsuhiro Ajito ◽  
Ho-Jin Song ◽  
...  
Keyword(s):  
Continuous Wave ◽  
Terahertz Spectroscopy ◽  
Spectroscopy System

ТИРИСТОРНЫЙ ЭФФЕКТ В СВЧ ИС, ИЗГОТОВЛЕННЫХ ПО SIGE БИКМОП-ТЕХНОЛОГИЯМ

2020 ◽  
Vol 96 (3s) ◽  
pp. 612-614
Author(s):  
В.В. Елесина ◽  
И.О. Метелкин
Keyword(s):  
Integrated Circuits ◽  
Extraction Procedure ◽  
Compact Model ◽  
Model Parameters ◽  
Cad Systems ◽  
Parameters Extraction ◽  
Sige Bicmos ◽  
Bicmos Integrated Circuits ◽  
Basic Parameters ◽  
Radiation Induced

Проведен анализ случаев возникновения тиристорного эффекта в СВЧ ИС, изготовленных по технологии SiGe БиКМОП, при воздействии ионизирующего излучения. Рассмотрены области СВЧ ИС, чувствительные к возникновению ТЭ, определены основные параметры тиристорных структур. Проведена апробация подхода к восстановлению параметров схемно-топологической радиационно-ориентированной модели тиристорной структуры для САПР. The paper analyzes ionizing radiation induced latchup in microwave SiGe BiCMOS integrated circuits (ICs). Critical parts of ICs sensitive to latchup have been identified and basic parameters of corresponding parasitic thyristor structures have been determined. An approach has been approved to the thyristor structure compact model parameters extraction procedure intended for use in CAD systems.

Standoff Raman Detection of Explosive Materials Using a Small Raman Spectroscopy System

2017 ◽  
Vol 20 (3) ◽  
pp. 60-66 ◽  
Author(s):  
Naseer M. Hadi ◽  
◽  
Mohammad R. Mohammad ◽  
Haider G. Abdulzahraa ◽  
Keyword(s):  
Raman Spectroscopy ◽  
Explosive Materials ◽  
Spectroscopy System

Ultra Broadband Low-Power 70 GHz Active Balun in 130-nm SiGe BiCMOS

2020 ◽  
Author(s):  
Aniello Franzese ◽  
Mohamed H. Eissa ◽  
Thomas Mausolf ◽  
Dietmar Kissinger ◽  
Renato Negra ◽  
...  
Keyword(s):  
Low Power ◽  
Sige Bicmos ◽  
Active Balun
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