Investigation of fabrication process for sub 20-nm dense pattern of non-chemically amplified electron beam resist based on acrylic polymers

2016 ◽  
Author(s):  
Shunsuke Ochiai ◽  
Tomohiro Takayama ◽  
Yukiko Kishimura ◽  
Hironori Asada ◽  
Manae Sonoda ◽  
...  
Keyword(s):  
Electron Beam ◽  
Fabrication Process ◽  
Acrylic Polymers ◽  
Chemically Amplified ◽  
20 Nm ◽  
Dense Pattern

scholarly journals Expanding 3D Nanoprinting Performance by Blurring the Electron Beam

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 115
Author(s):  
Lukas Seewald ◽  
Robert Winkler ◽  
Gerald Kothleitner ◽  
Harald Plank
Keyword(s):  
Electron Beam ◽  
Direct Write ◽  
Design Flexibility ◽  
Individual Branch ◽  
Inclination Angles ◽  
3D Architecture ◽  
20 Nm ◽  
Surface Morphologies ◽  
Nm Range ◽  
Mechanical Rigidity

Additive, direct-write manufacturing via a focused electron beam has evolved into a reliable 3D nanoprinting technology in recent years. Aside from low demands on substrate materials and surface morphologies, this technology allows the fabrication of freestanding, 3D architectures with feature sizes down to the sub-20 nm range. While indispensably needed for some concepts (e.g., 3D nano-plasmonics), the final applications can also be limited due to low mechanical rigidity, and thermal- or electric conductivities. To optimize these properties, without changing the overall 3D architecture, a controlled method for tuning individual branch diameters is desirable. Following this motivation, here, we introduce on-purpose beam blurring for controlled upward scaling and study the behavior at different inclination angles. The study reveals a massive boost in growth efficiencies up to a factor of five and the strong delay of unwanted proximal growth. In doing so, this work expands the design flexibility of this technology.

Systematic Studies of Fullerene Derivative Electron Beam Resists

1999 ◽  
Vol 584 ◽  
Author(s):  
A. P. G. Robinson ◽  
R. E. Palmer ◽  
T. Tada ◽  
T. Kanayama ◽  
E. J. Shelley ◽  
...  
Keyword(s):  
Electron Beam ◽  
Dissolution Rate ◽  
Organic Solvents ◽  
Spin Coating ◽  
Electron Beam Irradiation ◽  
Fullerene Derivative ◽  
Silicon Substrates ◽  
Beam Irradiation ◽  
Negative Tone ◽  
20 Nm

AbstractWe report systematic studies of the response of C60 derivatives to electron beam irradiation. Films of fourteen different mono, tris and tetra adduct methanofullerene C60 derivatives were produced by spin coating on hydrogen terminated silicon substrates. Exposure of the films to a 20 keV electron beam substantially altered the dissolution rate of the derivative films in organic solvents such as monochlorobenzene. All of the derivatives exhibited negative tone resist behaviour with sensitivities between ∼ 8.5 × 10-4 and ∼ 4 × 10-3 C/cm2 107, much higher than that of C60. Features with widths of ∼ 20 nm were produced using these compounds, and the etch ratios of the compounds were found to be more than twice those of a standard novolac based resist (SAL601).

Temperature Dependent Photoluminescence of ZnSe/Alq3 Hybrid Heterostructure

2008 ◽  
Vol 55-57 ◽  
pp. 493-496
Author(s):  
Wisanu Pecharapa ◽  
P. Potirak ◽  
W. Yindeesuk
Keyword(s):  
Electron Beam ◽  
Quantum Efficiency ◽  
Exciton State ◽  
Temperature Dependent ◽  
Pl Spectra ◽  
20 Nm ◽  
Temperature Dependent Photoluminescence

II-VI inorganic/organic heterostructures consisting of ZnSe and tris(8-hydroxyquinoline) aluminum (Alq3) were prepared by electron beam evaporator. Alq3 layer with 20 nm was grown between 200-nm ZnSe layers. Photoluminescence measurement was conducted at various temperatures in order to investigate the important temperature-dependent parameters of this structure. PL spectra revealed thermal population of exciton state and the change in PL quantum efficiency of the film.

Sub-150-nm electron-beam lithography using AZPN114 chemically amplified resist

1997 ◽  
Author(s):  
Zheng Cui ◽  
R. A. Moody ◽  
Ian M. Loader ◽  
John G. Watson ◽  
Philip D. Prewett
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Chemically Amplified ◽  
Chemically Amplified Resist

Single-component chemically amplified resist materials for electron-beam and x-ray lithography

1991 ◽  
Author(s):  
Anthony E. Novembre ◽  
Woon W. Tai ◽  
Janet M. Kometani ◽  
James E. Hanson ◽  
Omkaram Nalamasu ◽  
...  
Keyword(s):  
Electron Beam ◽  
Single Component ◽  
X Ray ◽  
Chemically Amplified ◽  
Chemically Amplified Resist
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