Progress in MOCVD growth of HgCdTe epilayers for HOT infrared detectors

2016 ◽  
Author(s):  
A. Kębłowski ◽  
W. Gawron ◽  
P. Martyniuk ◽  
D. Stępień ◽  
K. Kolwas ◽  
...  
Keyword(s):  
Infrared Detectors ◽  
Mocvd Growth ◽  
Hgcdte Epilayers

InAsSbBi and InSbBi: Potential Material Systems for Infrared Detection

1986 ◽  
Vol 90 ◽  
Author(s):  
S. M. Bedair ◽  
T. P. Humphreys ◽  
P. K. Chaing ◽  
T. Katsuyama
Keyword(s):  
Infrared Detectors ◽  
Room Temperature ◽  
Infrared Detection ◽  
Electrical Measurements ◽  
Quaternary Alloys ◽  
Mocvd Growth ◽  
Wide Range ◽  
Metallic Bismuth ◽  
Bismuth Antimony ◽  
First Time

ABSTRACTInSb1−x Bix (0.01 < × < 0.14) and InAsSbBi quaternary alloys are potentially attractive materials for the development of semiconductor infrared detectors covering the 8–14 μm range [1,2,3].We report for the first time, MOCVD growth of InSo1−x Bix (0.01 < × < 0.14) and InAs1−x−y Sbx Biy with 0.5 < × < 0.7 and 0.01 < y < 0.04 on both GaAs and InSb substrates using AsH3, TMSb, TEI and TMBi. Electrical measurements of the undoped InSo0.99 Bi0.01 shows a background carrier concentration of approximately 1016/cm3 and a room temperature mobility of 20,215 cm2/V.sec. To-date, these are the best reported electrical measurements for this ternary alloy.The formation of a secondary Bi phase and single crystal growth of metallic bismuth-antimony at the surface of InSo1−x Bix which results in deterioration of morphology with increasing values of x is also investigated. A wide range of analytic techniques, including SEM, EDX, electron microprobe and AES have been employed in our surface analysis.

Dual-band infrared detectors made on high-quality HgCdTe epilayers grown by molecular beam epitaxy on CdZnTe or CdTe/Ge substrates

2004 ◽  
Vol 33 (6) ◽  
pp. 667-672 ◽  
Author(s):  
P. Ballet ◽  
F. Noël ◽  
F. Pottier ◽  
S. Plissard ◽  
J. P. Zanatta ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Infrared Detectors ◽  
Molecular Beam ◽  
Dual Band ◽  
High Quality ◽  
Hgcdte Epilayers

MOCVD Growth and Characterization of AlGaInN Nanowires and Nanostructures

2005 ◽  
Vol 892 ◽  
Author(s):  
Jung Han ◽  
K Kim ◽  
Jie Su ◽  
Maria Gherasimova ◽  
Arto Nurmikko ◽  
...  
Keyword(s):  
Mocvd Growth

Antenna Structures for Optical Coupling in Quantum-Well Infrared Detectors

1998 ◽  
Author(s):  
William A. Beck ◽  
Mark S. Mirotznik ◽  
Thomas S. Faska
Keyword(s):  
Quantum Well ◽  
Infrared Detectors ◽  
Optical Coupling

scholarly journals Synthesis and Characterization of Fluorinated β-Ketoiminate Zinc Precursors and Their Utility in the AP-MOCVD Growth of ZnO:F

2015 ◽  
Vol 2015 (26) ◽  
pp. 4362-4372 ◽  
Author(s):  
Samuel D. Cosham ◽  
Gabriele Kociok-Köhn ◽  
Andrew L. Johnson ◽  
Jeff A. Hamilton ◽  
Michael S. Hill ◽  
...  
Keyword(s):  
Synthesis And Characterization ◽  
Mocvd Growth
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