Effect of chemical pressure manipulation on the valence and thermoelectric properties of the intermediate valence compound YbCu2-xNixGe2

2016 ◽  
Author(s):  
Gloria J. Lehr ◽  
Spencer L. Waldrop ◽  
Winston D. Carr ◽  
Donald T. Morelli
Keyword(s):  
Thermoelectric Properties ◽  
Intermediate Valence ◽  
Chemical Pressure

Enhanced thermoelectric properties induced by chemical pressure in Ca3Co4O9

2014 ◽  
Vol 40 (4) ◽  
pp. 5217-5222 ◽  
Author(s):  
S. Demirel ◽  
S. Avci ◽  
E. Altin ◽  
S. Altin ◽  
M.E. Yakinci
Keyword(s):  
Thermoelectric Properties ◽  
Chemical Pressure

Nernst effect of the intermediate valence compound YbAl3: revisiting the thermoelectric properties

2015 ◽  
Vol 27 (10) ◽  
pp. 105601 ◽  
Author(s):  
Beipei Wei ◽  
Jiahao Zhang ◽  
Peijie Sun ◽  
Wenquan Wang ◽  
Nanlin Wang ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Intermediate Valence ◽  
Nernst Effect

X-RAY ABSORPTION STUDY OF INTERMEDIATE VALENCE IN Sm1−xGdxS ALLOYS

1990 ◽  
Vol 04 (09) ◽  
pp. 1567-1577 ◽  
Author(s):  
R.K. SINGHAL ◽  
K.V.R. RAO ◽  
U. CHANDRA ◽  
D.C. JAIN ◽  
K.B. GARG
Keyword(s):  
Critical Concentration ◽  
Fair Agreement ◽  
Trivalent Cation ◽  
Absorption Study ◽  
Intermediate Valence ◽  
Edge Structure ◽  
Chemical Pressure ◽  
X Ray ◽  
Average Valence ◽  
X Ray Absorption

X-ray Absorption Near Edge Structure (XANES) measurements above LII edge of Sm are employed to study the intermediate valence in Sm 1−x Gd x S (0.05≤x≤0.30) alloys. The split white lines at the LII edge of Sm are used to determine the average valence of Sm in these alloys, The internal chemical pressure generated by substitution of smaller trivalent cation, Gd, for Sm drives the latter to a higher valence. Sm valence increases smoothly first and then undergoes an abrupt increment at a critical concentration of 16 at.% of Gd. At concentration of Gd higher than 16 at.% the increase in Sm valence is smooth and small. The data for Sm average valence for Sm 1−x Gd x S alloys obtained by LII absorption edges shows fair agreement with other techniques.

Chemical pressure effect on thermoelectric properties of Ca and Ba substituted SrSi2alloys

2013 ◽  
Vol 113 (1) ◽  
pp. 013710 ◽  
Author(s):  
C. S. Lue ◽  
S. F. Wong ◽  
J. Y. Huang ◽  
H. L. Hsieh ◽  
H. Y. Liao ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Pressure Effect ◽  
Chemical Pressure

Exact solution of a four-site crystal model for an intermediate-valence system

1986 ◽  
Vol 47 (6) ◽  
pp. 1029-1034 ◽  
Author(s):  
J.C. Parlebas ◽  
R.H. Victora ◽  
L.M. Falicov
Keyword(s):  
Exact Solution ◽  
Intermediate Valence ◽  
Crystal Model

Synthesis and thermoelectric properties of the pseudo-binary skutterudites CoGe1.5Se1.5 and CoSn1.5Te1.5

2008 ◽  
Author(s):  
David Johnson ◽  
Qiyin Lin ◽  
Mary Smeller ◽  
Colby Heideman ◽  
Arwyn L. E. Smalley
Keyword(s):  
Thermoelectric Properties

Thermoelectric Properties of PbSr(Se,Te)-Based Low Dimensional Structures

2000 ◽  
Vol 626 ◽  
Author(s):  
Harald Beyer ◽  
Joachim Nurnus ◽  
Harald Böttner ◽  
Armin Lambrecht ◽  
Lothar Schmitt ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Evaluation Method ◽  
Interband Transition ◽  
Multiple Quantum Well ◽  
Calculated Data ◽  
Multiple Quantum ◽  
Ir Transmission ◽  
Low Dimensional

ABSTRACTThermoelectric properties of low dimensional structures based on PbTe/PbSrTe-multiple quantum-well (MQW)-structures with regard to the structural dimensions, doping profiles and levels are presented. Interband transition energies and barrier band-gap are determined from IR-transmission spectra and compared with Kronig-Penney calculations. The influence of the data evaluation method to obtain the 2D power factor will be discussed. The thermoelectrical data of our layers show a more modest enhancement in the power factor σS2 compared with former publications and are in good agreement with calculated data from Broido et al. [5]. The maximum allowed doping level for modulation doped MQW structures is determined. Thermal conductivity measurements show that a ZT enhancement can be achieved by reducing the thermal conductivity due to interface scattering. Additionally promising lead chalcogenide based superlattices for an increased 3D figure of merit are presented.

Structure and Thermoelectric Properties of New Quaternary Tin and Lead Bismuth Selenides, K1+xM4-2xBi7+xSe15 (M = Sn, Pb) and K1+xSn5-xBi11+xSe22

2000 ◽  
Vol 626 ◽  
Author(s):  
Antje Mrotzek ◽  
Kyoung-Shin Choi ◽  
Duck-Young Chung ◽  
Melissa A. Lane ◽  
John R. Ireland ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Single Crystal ◽  
Thermoelectric Properties ◽  
Three Dimensional ◽  
Structure Type ◽  
Narrow Gap ◽  
Low Thermal Conductivity ◽  
Seebeck Coefficients ◽  
Metal Atoms ◽  
Anionic Framework

ABSTRACTWe present the structure and thermoelectric properties of the new quaternary selenides K1+xM4–2xBi7+xSe15 (M = Sn, Pb) and K1-xSn5-xBi11+xSe22. The compounds K1+xM4-2xBi7+xSe15 (M= Sn, Pb) crystallize isostructural to A1+xPb4-2xSb7+xSe15 with A = K, Rb, while K1-xSn5-xBi11+xSe22 reveals a new structure type. In both structure types fragments of the Bi2Te3-type and the NaCl-type are connected to a three-dimensional anionic framework with K+ ions filled tunnels. The two structures vary by the size of the NaCl-type rods and are closely related to β-K2Bi8Se13 and K2.5Bi8.5Se14. The thermoelectric properties of K1+xM4-2xBi7+xSe15 (M = Sn, Pb) and K1-xSn5-xBi11+xSe22 were explored on single crystal and ingot samples. These compounds are narrow gap semiconductors and show n-type behavior with moderate Seebeck coefficients. They have very low thermal conductivity due to an extensive disorder of the metal atoms and possible “rattling” K+ ions.

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