Optical nonlinearities in plasmonic metamaterials (Conference Presentation)

2016 ◽  
Author(s):  
Anatoly V. Zayats
Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1808
Author(s):  
Liqiang Zhuo ◽  
Huiru He ◽  
Ruimin Huang ◽  
Shaojian Su ◽  
Zhili Lin ◽  
...  

The valley degree of freedom, like the spin degree of freedom in spintronics, is regarded as a new information carrier, promoting the emerging valley photonics. Although there exist topologically protected valley edge states which are immune to optical backscattering caused by defects and sharp edges at the inverse valley Hall phase interfaces composed of ordinary optical dielectric materials, the dispersion and the frequency range of the edge states cannot be tuned once the geometrical parameters of the materials are determined. In this paper, we propose a chirped valley graphene plasmonic metamaterial waveguide composed of the valley graphene plasmonic metamaterials (VGPMs) with regularly varying chemical potentials while keeping the geometrical parameters constant. Due to the excellent tunability of graphene, the proposed waveguide supports group velocity modulation and zero group velocity of the edge states, where the light field of different frequencies focuses at different specific locations. The proposed structures may find significant applications in the fields of slow light, micro–nano-optics, topological plasmonics, and on-chip light manipulation.


ACS Nano ◽  
2021 ◽  
Vol 15 (4) ◽  
pp. 7155-7167
Author(s):  
Alireza Taghizadeh ◽  
Kristian S. Thygesen ◽  
Thomas G. Pedersen

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Nils Dessmann ◽  
Nguyen H. Le ◽  
Viktoria Eless ◽  
Steven Chick ◽  
Kamyar Saeedi ◽  
...  

AbstractThird-order non-linearities are important because they allow control over light pulses in ubiquitous high-quality centro-symmetric materials like silicon and silica. Degenerate four-wave mixing provides a direct measure of the third-order non-linear sheet susceptibility χ(3)L (where L represents the material thickness) as well as technological possibilities such as optically gated detection and emission of photons. Using picosecond pulses from a free electron laser, we show that silicon doped with P or Bi has a value of χ(3)L in the THz domain that is higher than that reported for any other material in any wavelength band. The immediate implication of our results is the efficient generation of intense coherent THz light via upconversion (also a χ(3) process), and they open the door to exploitation of non-degenerate mixing and optical nonlinearities beyond the perturbative regime.


2004 ◽  
Vol 84 (7) ◽  
pp. 1043-1045 ◽  
Author(s):  
K. Jarasiunas ◽  
V. Gudelis ◽  
R. Aleksiejunas ◽  
M. Sudzius ◽  
S. Iwamoto ◽  
...  

2021 ◽  
Vol 103 (6) ◽  
Author(s):  
Raphael F. Ribeiro ◽  
Jorge A. Campos-Gonzalez-Angulo ◽  
Noel C. Giebink ◽  
Wei Xiong ◽  
Joel Yuen-Zhou

1990 ◽  
Vol 2 (6) ◽  
pp. 685-690 ◽  
Author(s):  
Seth R. Marder ◽  
Joseph W. Perry ◽  
Bruce G. Tiemann ◽  
Richard E. Marsh ◽  
William P. Schaefer

2003 ◽  
Vol 83 (2) ◽  
pp. 263-265 ◽  
Author(s):  
R. Rapaport ◽  
Gang Chen ◽  
O. Mitrofanov ◽  
C. Gmachl ◽  
H. M. Ng ◽  
...  

1988 ◽  
Vol 52 (3) ◽  
pp. 182-184 ◽  
Author(s):  
N. Peyghambarian ◽  
S. H. Park ◽  
S. W. Koch ◽  
A. Jeffery ◽  
J. E. Potts ◽  
...  

1994 ◽  
Vol 6 (6) ◽  
pp. 494-496 ◽  
Author(s):  
Sandra Gilmour ◽  
Seth R. Marder ◽  
Joseph W. Perry ◽  
Lap-Tak Cheng

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